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Toshiba America Electronic Components MG30G1BL3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MG30G1BL3		55			1 $25.302 10 $25.302 100 $21.5067 1000 $21.5067 10000 $21.5067	Buy Now
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MG30G Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
MG30G1BL3	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G1BL3	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G1BL3	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MG30G1BL3	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG30G1BL4	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G1BL4	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG30G1JL1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G1JL1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG30G2CL3	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG30G2CL3	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G2CL3	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G2DL1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG30G2DL1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G2DL1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

MG30G2DM1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG30G2DM1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G2DM1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG30G2YK1	Unknown	TRANSISTOR MODULES	Scan	PDF
MG30G2YK1	Unknown		Scan	PDF
MG30G2YL1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF

MG30G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20	Original	PDF	MG30G2DM1 time700n HL093HD5 Code4-310 NumberTR00400310
MG30G2YM1 Abstract: LD30A Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance	OCR Scan	PDF	MG30G2YM1 15AIN-SOURCE MG30G2YM1 LD30A
MG30G6EL1 Abstract: transistor 30A 600v tf s 544 a Text: QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.	OCR Scan	PDF	MG30G6EL1 00A/As MG30G6EL1 transistor 30A 600v tf s 544 a
MG30G1BL3 Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G1BL3 HIGH POWER SWITCHING APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . High DC Current Gain : hFE=100 Min. (Ic= 30A) . Low Saturation Voltage: VcE(sat)=2V(Max.)(Ic=30A) . High Speed : tf=2/js(Max.) (Ic=30A)	OCR Scan	PDF	MG30G1BL3 MG30G1BL3
MG30H1BL1 Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1 Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL	OCR Scan	PDF	2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1
MG30G6EL1 Abstract: mg30g6 Text: MG30G6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W ER SWIT C HI N G A PPLICATIONS. M OT O R CONTROL APPLICATIONS. FE ATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.	OCR Scan	PDF	MG30G6EL1 00A//is MG30G6EL1 mg30g6
Untitled Abstract: No abstract text available Text: — aSSSfwus o,FFusEpTYPE— MG30G6EL9 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hpE=100 Min. (Ic=30A)	OCR Scan	PDF	MG30G6EL9
MG30G2YL1 Abstract: No abstract text available Text: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3	OCR Scan	PDF	MG30G2YL1 50i------------------------------ 77--r MG30G2YL1
mg30g2 Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain:	OCR Scan	PDF	MG30G2YL1 mg30g2
MG30G1BL2 Abstract: 40mR Text: Sb T O S H I B A -CDISCRETE/OPTOl 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S O 5e>C 08207 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE)_ D0DÖ207 r- Ü MG30G1BL2 H G I H P O W E R SI-ITCHING A P P L I C A T I O N S . Unit in mm FEATURES:	OCR Scan	PDF	MG30G1BL2 MG30G1BL2 40mR
MG50G2 Abstract: No abstract text available Text: dF TOSHIBA íDI SC RE TE /OPT O> 90D 16006 9097 250 T O S HI BA DISCRETE/OPTO TO SH IB A I t OTTHSD DDlbQDt, 1 J ~ SEMICONDUCTOR r-3J-3S~ TOSHIBA GTR MODULE MG30G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	PDF	MG30G2YL1 MG50G2YL3 MG50G2
MG30G2DM1 Abstract: No abstract text available Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm M OTOR CONTROL APPLICATIONS. FEATURES: 4 - F A S T - ON TAB # 1 1 0 . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode.	OCR Scan	PDF	MG30G2DM1 -108B1A MG30G2DM1
MG30G6EL2 Abstract: EGA-HG30G6EL2-1 TOSHIBA bat dt60A toshiba free wheeling diode Text: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG30G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES! . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.	OCR Scan	PDF	MG30G6EL2 IC-30A) 12-FABTOH-TAB 2-72A2A EGA-HG30G6EL2-1 MG30G6EL2 Ta-25 EGA-MG30G6EL2-3 TOSHIBA bat dt60A toshiba free wheeling diode
MG30G1BL3 Abstract: MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815 2SD650 2SD649 2SD646A Text: - m « Type No. tt « Manuf. = B ;¥ SANYO TOSHIBA K s 2SD 646 — • Ä $ MG50G1BL3 2SD 646A M $ MG30G1BL3 2SD 647 K 2: 2SD647A 2SD 648 Ä 3* 2SD648A 2SD 649 * 2 2SD 650 - s a 2SD 654 3 * 2SD545 2SD 655 . B ÎL 2SD1012 2SD 656 Ä S 2SD 657 * $ 2SD 661 fâ	OCR Scan	PDF	2SD645 2SD646 2SD646A 2SD647 2SD648 2SD649 2SD650 2SD654 2SD655 2SD656 MG30G1BL3 MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815

MG30G2YM1 Abstract: No abstract text available Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance : RDS ON =0.205n(Max.)(I d =30A)	OCR Scan	PDF	MG30G2YM1 El/02) DRAIN-30URCE MG30G2YM1
Untitled Abstract: No abstract text available Text: MG30G6EL9 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A P P L ICATIONS. . The Collector Is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Jain	OCR Scan	PDF	MG30G6EL9
MG30G2DL1 Abstract: MG30G2DL Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=30A)	OCR Scan	PDF	MG30G2DL1 MG30G2DL1 MG30G2DL
MG30G2CL3 Abstract: DC motor control 30A Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain	OCR Scan	PDF	MG30G2CL3 VCC-300V 00A//is MG30G2CL3 DC motor control 30A
Untitled Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package, . High DC Current Gain : hpE=100 Min. (Ic=30A)	OCR Scan	PDF	MG30G6EL2 30LLECX0R
2sk1029 Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1 Text: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1	OCR Scan	PDF	2SK578* 2SK447" 2SK568* 2SK1513" 2SK1029* MG15G1AM1 2SK1333* MG30D1ZM1 MG30D2YM1 MG30G2YM1 2sk1029 MP6702 2sk1513 2SK56 MG15C4HM1 MG50D2DM1
MG30G1BL4 Abstract: mg30g1 2-33F1A MG30 mg30g Text: TOSHIBA GTR MODULE SEMICONDUCTOR T O S H IB A TECHNICAL MG30G1 B L 4 SILICON NPN TRIPLE DIFFUSED TYPE DATA M G 30Ü 10L4 HIGH POWER SWITCHING APPLICATIONS. • • • • The Collector is Isolatedfrom Case. High DC Current Gain : hjvE = 100 (Mixi.) (Iq = 30A)	OCR Scan	PDF	2-33F1A VCC-300V MG30G1 30G1BL4) MG30G1BL4 2-33F1A MG30 mg30g
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
2SK 150A Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
MG30G2CL3 Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29 Text: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0	OCR Scan	PDF	2-68B2A MG15N2CK1 2-94C3A NG15N2YK1 HG25M2CK2 MG25M2YK1 H-101 MG30G2CL3 MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29

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MG30G Search Results

MG30G Price and Stock

Toshiba America Electronic Components MG30G1BL3

Toshiba America Electronic Components MG30G1BL2

MG30G Datasheets (36)

MG30G Datasheets Context Search

Untitled

MG30G2YM1

MG30G6EL1

MG30G1BL3

MG30H1BL1

MG30G6EL1

Untitled

MG30G2YL1

mg30g2

MG30G1BL2

MG50G2

MG30G2DM1

MG30G6EL2

MG30G1BL3

MG30G2YM1

Untitled

MG30G2DL1

MG30G2CL3

Untitled

2sk1029

MG30G1BL4

b1375

2SK 150A

MG30G2CL3