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    MG30G6EL2 Search Results

    MG30G6EL2 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG30G6EL2 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG30G6EL2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG30G6EL2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG30G6EL2 Toshiba V(cbo): 600V V(ceo): 450V V(cex): 600V V(ebo): 6V 30A 200W silicon NPN triple diffused transistor. For high power switching applications, motor control applications Scan PDF
    MG30G6EL2 Toshiba TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

    MG30G6EL2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG30G6EL2

    Abstract: EGA-HG30G6EL2-1 TOSHIBA bat dt60A toshiba free wheeling diode
    Text: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG30G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES! . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.


    OCR Scan     		PDF MG30G6EL2 IC-30A) 12-FABTOH-TAB 2-72A2A EGA-HG30G6EL2-1 MG30G6EL2 Ta-25 EGA-MG30G6EL2-3 TOSHIBA bat dt60A toshiba free wheeling diode

    MG30G6EL2

    Abstract: No abstract text available
    Text: GTR MODULE_ SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.


    OCR Scan     		PDF MG30G6EL2 MG30G6EL2

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package, . High DC Current Gain : hpE=100 Min. (Ic=30A)


    OCR Scan     		PDF MG30G6EL2 30LLECX0R

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


    OCR Scan     		PDF MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45

    opto A3121

    Abstract: A3121 MG30G6EL2 1251C DT-33-35
    Text: T oshiba -c d i s c r e t l / ü p t ü j 9097250 TOSHIBA TOSHIBA TO < D I S C R E TE/OPTO SEMICONDUCTOR DE J j K n 7 E S G ODlbSEb 90D DT-33-35 16226 H TOSHIBA GTR MODULE MG3 0 G 6 E L 2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF DT-33-35 MG30G6EL2 12-FA8T0H-TAB 2-72A2A EGA-MG30G6EL2-4 opto A3121 A3121 1251C DT-33-35

    MG75J2YS40

    Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
    Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40


    OCR Scan     		PDF E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44