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    MG30 Search Results

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    RJMG3018241BAEH Amphenol Communications Solutions RJMG 1x1 10G, with led Visit Amphenol Communications Solutions
    RJMG3018M112AER Amphenol Communications Solutions RJMG, Input output Connectors, 10G 1x1 with leds Visit Amphenol Communications Solutions
    RJMG301T221E3ER Amphenol Communications Solutions RJMG 1x1 10G, with led Visit Amphenol Communications Solutions
    RJMG301T244E3ER Amphenol Communications Solutions RJMG 1x1 10G RightAngle Visit Amphenol Communications Solutions
    RJMG3018M162AER Amphenol Communications Solutions RJMG, Input output Connectors, 10G 1x1 with leds Visit Amphenol Communications Solutions
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    Diodes Incorporated DMG301NU-13

    MOSFET N-CH 25V 260MA SOT23
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    Newark DMG301NU-13 Cut Tape 16,187 5
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    TME DMG301NU-13 4,779 1
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    Ameya Holding Limited DMG301NU-13 7,711
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    Avnet Silica DMG301NU-13 10 Weeks 10,000
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    Win Source Electronics DMG301NU-13 72,085
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    Diodes Incorporated DMG302PU-13

    MOSFET P-CH 25V .17A SOT-23
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    DigiKey DMG302PU-13 Cut Tape 7,945 1
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    Texas Instruments LP5951MG-3.0-NOPB

    IC REG LINEAR 3V 150MA SC70-5
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    YIC International co Ltd ZTTCP2.0MG-30P

    CERAMIC RES 2.0000MHZ 30PF SMD
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    DigiKey ZTTCP2.0MG-30P Cut Tape 629 1
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    Hirose Electric Co Ltd HRM(G)-300-468B-1(01)

    CONN SMA JACK STR
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    DigiKey HRM(G)-300-468B-1(01) Bag 103 1
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    Sager HRM(G)-300-468B-1(01) 1
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    MG30 Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG300 FLIR Uncategorized - Miscellaneous - CAT IV INSULATION TESTER/M. METE Original PDF
    MG-3000-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 3000PSI LCD Original PDF
    MG-3000-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 3000PSI LCD Original PDF
    MG-3000-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 3000 PSI 1/8 NPT 9V Original PDF
    MG-3000-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 3000 PSI 4-20 MA 1/8 NPT Original PDF
    MG-300-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 300PSI LCD Original PDF
    MG-300-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 300PSI LCD Original PDF
    MG-300-B-9V-F SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 300 PSI 1/8 NPT Original PDF
    MG-300-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 300 PSI 1/8 NPT 9V Original PDF
    MG-300-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 300 PSI 4-20 MA 1/8 NPT Original PDF
    MG300G1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300G1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300G1UL1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG300G1UL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300G1UL1 Toshiba Silicon NPN CTR module for high switching and motor control applications Scan PDF
    MG300H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300H1FL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300H1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300H1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    ...

    MG30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original
    PDF MG300Q1US41 2-109A4A MG300Q1US41

    MG30G2YM1

    Abstract: LD30A
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


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    PDF MG30G2YM1 15AIN-SOURCE MG30G2YM1 LD30A

    Untitled

    Abstract: No abstract text available
    Text: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


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    PDF MG300J1US51 2-70v MG300J1US51

    300Q1US41

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


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    PDF MG300Q1US41 00A/ius 300Q1US41

    MG30G6EL1

    Abstract: transistor 30A 600v tf s 544 a
    Text: QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.


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    PDF MG30G6EL1 00A/As MG30G6EL1 transistor 30A 600v tf s 544 a

    MG30G1BL3

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G1BL3 HIGH POWER SWITCHING APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . High DC Current Gain : hFE=100 Min. (Ic= 30A) . Low Saturation Voltage: VcE(sat)=2V(Max.)(Ic=30A) . High Speed : tf=2/js(Max.) (Ic=30A)


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    PDF MG30G1BL3 MG30G1BL3

    Tag 676 800

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •


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    PDF MG300Q2YS50 MG300 2YS50 Tag 676 800

    MG300H1FL1

    Abstract: Diode 864
    Text: G TR MODULE MG300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 FEATURES: / 4- 0& 5± O. 3 YJjtj . The Collector is Isolated from Case. yPi. Bl BX . With Built-in Free Wheeling Diode . High DC Current Gain : hFE=80 Min. (Ic=300A)


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    PDF MG300H1FL1 2-80D1A MG300H1FL1 Diode 864

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


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    PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)


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    PDF MG300Q2YS40 2-109D2A 00A//iS TjS125

    GW50

    Abstract: No abstract text available
    Text: MG30H2DM1 MG30H2YM1 GTR MODULE SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING A P P L I C A T I O N S . MOTOR CONTROL A P P L I C A T I O N S . • The Drain is Isolated from Case. • 2 MOS FETs are Built-in to 1 Package. • With Built-in Free Wieeling Diode .:


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    PDF 12jjs MG30H2DM1 MG30H2YM1 205ft MG30H2YM1 G30H2DM G30H2YM GW50

    MG300M1UK2

    Abstract: No abstract text available
    Text: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage


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    PDF MG300M1UK2 300M1UK2 MG300M1UK2

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30D2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


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    PDF MG30D2DM1 0-125n 60rent

    MG30G6EL1

    Abstract: mg30g6
    Text: MG30G6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W ER SWIT C HI N G A PPLICATIONS. M OT O R CONTROL APPLICATIONS. FE ATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.


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    PDF MG30G6EL1 00A//is MG30G6EL1 mg30g6

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode. High Speed : tf=0.36,us Max. (Ic = 30A)


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    PDF MG30J6ES50 15//s

    Untitled

    Abstract: No abstract text available
    Text: — aSSSfwus o,FFusEpTYPE— MG30G6EL9 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hpE=100 Min. (Ic=30A)


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    PDF MG30G6EL9

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG30V2YS40 TO SH IBA GTR M O DU LE SILICON N CHANNEL IGBT MG30V2YS40 HIGH PO W E R SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The Electrodes are Isolated from Case. H igh Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode


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    PDF MG30V2YS40

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG300J2YS50 MG300 J 2 YS 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    PDF MG300J2YS50 MG300 TjS125Â

    MG300Q2YS50

    Abstract: 300AT
    Text: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage


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    PDF MG300Q2YS50 300Q2Y MG300Q2YS50 300AT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode.


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    PDF MG30J6ES50 --30A,

    MG300M1FK1

    Abstract: DIODE S3L DIODE TP S3L
    Text: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode


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    PDF

    MG300Q1US51

    Abstract: MG300Q1
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)


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    PDF MG300Q1US51 MG300Q1 2-109F1A MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300J1US51 M G 3 0 0 J 1 US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT HIGH P O W E R SW ITCHIN G APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    PDF MG300J1US51

    MG30G2YL1

    Abstract: No abstract text available
    Text: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3


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    PDF MG30G2YL1 50i------------------------------ 77--r MG30G2YL1