MG30G2DL1 Search Results

MG30G2DL1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG30G2DL1		Unknown	Power and Industrial Semiconductors Data Book		Scan	PDF
MG30G2DL1		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
MG30G2DL1		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF

MG30G2DL1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
tbf819 Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。保守品種 1 形名代替品種形名代替品種	Original	PDF	04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
MG30G2DL1 Abstract: MG30G2DL Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=30A)	OCR Scan	PDF	MG30G2DL1 MG30G2DL1 MG30G2DL
MG30H1BL1 Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1 Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL	OCR Scan	PDF	2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1
j2y transistor Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,	OCR Scan	PDF	O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
MG150H2DL1 Abstract: MG100G2DL1 MG30G2DL1 MG100G2DL MG50G2DL1 MG75G2DL1 MG100H2DL2 2-98C2A 408 npn Text: — 216 — N P N , h y f ’— ' l v y y f ë f â . 2 f f lf t 8 - h 7 ' s i / 7^ 9 2 flf iï* lÂ o 9 ' ~ 'J y o 7 ’J — j M o a ô È t i9 » « 8 K S H f f lU B •9 ' * t — K f t d l -1 E l o iy ± C2 JL y + Y ? ( ^ s ^ t c T ) C l Y f Î	OCR Scan	PDF	-25-C) MG50G2DL1 MG75G2DL1 H-101 MG150H2DL1 MG100G2DL1 MG30G2DL1 MG100G2DL MG100H2DL2 2-98C2A 408 npn
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	PDF	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	PDF	00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
MG30G1BL3 Abstract: MG30G2CL3 C2514 2.45G VCO MG30G2DL1 MG30G2DL MG30G6EL1 mg30g1jl1 Text: TO TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO , Ä , SEMICONDUCTOR DE I TDTTSSO D D l t a n 7 90D 16219 M.G30G1 M G 3 0 G 1 M G 3 0 G 2 M G 3 0 G 2 M G 3 0 G 6 TECHNICAL DATA DT"33"35“ BL3 J L 1 C L 3 D L 1 E L 1 Unit ln mm CO .J « »H o o	OCR Scan	PDF	G30G1 MG30G2DL DT-33-35' 600V0E T0T72S0 0Qlb224 MG30G1BL3 MG30G1JL1 MG30G2CL3 MG30G2DL1 C2514 2.45G VCO MG30G6EL1