IXSN62N60U1
Abstract: 62N60U1
Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient
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62N60U1
OT-227
IXSN62N60U1
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62N60U1
Abstract: No abstract text available
Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A V GES
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62N60U1
62N60U1
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sot227b2
Abstract: No abstract text available
Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient
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62N60U1
OT-227
sot227b2
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient
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62N60U1
OT-227
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BERULUB FR 16 B
Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power
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IXBH40N160,
BERULUB FR 16 B
circuit diagram of 5kw smps full bridge
thyristor aeg
UC3854 5kw
harmer simmons
BERULUB FR 16
Grease Berulub FR 16
Berulub FR 66
5kw smps pfc
ups PURE SINE WAVE schematic diagram
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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b1113
Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2
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PLUS247
247TM
O-247
O-264
O-268
16N60U1
24N60U1
30N60U1
62N60U1
24N60AU1
b1113
diode b18
35N120AU1
40N60CD1
diode b129
50N60BD1
30N60BD1
40N60BD1
IXSH 35N120AU1
diode b14
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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Untitled
Abstract: No abstract text available
Text: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2
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62N60U1
OT-227
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IC2560-0
Abstract: No abstract text available
Text: DIXYS IGBT with Diode IXSN 62N60U1 VCES 600 V 90 A 2.5 V IC25 v CE sat Short Circuit SOA Capability G é i t> E Maximum Ratings Symbol Test Conditions VCES Tj = 25° C to 150° C 600 V vCGR T,J = 25° C to 150°C; R(a„c = 1 Mi2 600 A VGES Continuous ±20
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62N60U1
OT-227B,
IC2560-0
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Untitled
Abstract: No abstract text available
Text: i n i x Y s IGBT with Diode IXSN 62N60U1 VCES I = 600 V = 90 A = 2.5 V C25 vCE sat S h o r t C ir c u it S O A C a p a b ility ?C G E AE Maximum Ratings Symbol Test Conditions V CES T , = 25°C to 150°C VCGR T j = 25°C to 150°C; RGE = 1 Mi2 600 A V0ES
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62N60U1
OT-227B,
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B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
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O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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30n60
Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100
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00Q1737
20N60
O-247
30N60
40N60
25N100
45N100
45N120
20N60A
24N60A
30n60
40N60AU1
40N60
igbt 30N60
30N60A
50N100
30n60* 227
30N60U1
IXSN40N60AU1
50N60U1
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85C0
Abstract: IXSN35N100U1 SO 042
Text: Insulated Gate Bipolar Transistors IGBT "S" series with improved SCSOA capability Type V v CE(aat} c te8 max. typ- typ- ^auc max. PF Outlines on page 33 C = Collector, E Emitter, G = Gate, KE = Kelvin Emitter US K/W W 10 0.83 0.62 0.42 155 45 50 90 US 0.4
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20N60®
30N60
40N60
25N100
45N100
N100U1
OT-227B
85C0
IXSN35N100U1
SO 042
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BTS 3900 a
Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device
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T-227B
BTS 3900 a
BTS 3900
12N60
BTS 3900 l
35N120U1
24n60
52N60A
IXSH 35N120AU1
35n120u
35N120AU1
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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CS1011
-18io1
CS1011-22io1
CS1011-25io1
CS1250-12io1
CS1250-14io1
CS1250-16io1
CS20-12
CS20-14
CS20-16
8n80
DS117-12A
36-18N
16go
20N60A
2QN60
62-16N07
DSA117-12
10N60A
MCC95-12io1B
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40N60A
Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A
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2N100
30N60
40N60
25N100
45N100
45N120
2N100A
10N60A
24N60A
30N6QA
40N60A
G 40N60 igbt
IXSN35N120AU1
IXSH 35N120AU1
50N60AU1
25N120AU1
IXLH35N120A
IXLK35N120AU1
IXLN35N120AU1
IXLN50N120A
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mm036
Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA
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DSAI35-12A
5-16A
5-18A
5-12A
2-06A
12-1OA
2-12A
2x30-Q4C
mm036
ml075-12
MM036-12
mm036-16
mm075-12io1
mm062
DSI 12-06A
MDD95-16N1B
ME03
21N100
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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b14 smd diode
Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60
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T0-220
O-263
O-247
O-247
T0-204
24N60
30N60
40N60
25N100
45N100
b14 smd diode
B1108
DIODE SMD b14
smd diode B1100
16N60
B1106
B1112
B1108 D
B1116
IXYS 30N60
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