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    20N60 Search Results

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    20N60 Price and Stock

    Infineon Technologies AG AIKB20N60CTATMA1

    IC DISCRETE 600V TO263-3
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    DigiKey AIKB20N60CTATMA1 Cut Tape 3,999 1
    • 1 $3.73
    • 10 $2.814
    • 100 $2.3327
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    AIKB20N60CTATMA1 Digi-Reel 3,999 1
    • 1 $3.73
    • 10 $2.814
    • 100 $2.3327
    • 1000 $2.13996
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    AIKB20N60CTATMA1 Reel 3,000 1,000
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    Avnet Americas AIKB20N60CTATMA1 Reel 26 Weeks 1,000
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    Mouser Electronics AIKB20N60CTATMA1 934
    • 1 $3.73
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    Newark AIKB20N60CTATMA1 Cut Tape 1,869 1
    • 1 $4.47
    • 10 $3.81
    • 100 $3.14
    • 1000 $2.46
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    Chip1Stop AIKB20N60CTATMA1 Cut Tape 1,000
    • 1 $3.8
    • 10 $2.7
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    • 1000 $1.88
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    EBV Elektronik AIKB20N60CTATMA1 27 Weeks 1,000
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    Micro Commercial Components MSJL20N60A-TP

    N-CHANNEL MOSFET,DFN8080A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSJL20N60A-TP Reel 3,000 3,000
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    MSJL20N60A-TP Cut Tape 2,920 1
    • 1 $4.5
    • 10 $2.972
    • 100 $4.5
    • 1000 $1.61488
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    Infineon Technologies AG SPB20N60C3ATMA1

    MOSFET N-CH 650V 20.7A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB20N60C3ATMA1 Cut Tape 2,595 1
    • 1 $4.91
    • 10 $3.261
    • 100 $4.91
    • 1000 $1.926
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    SPB20N60C3ATMA1 Digi-Reel 2,595 1
    • 1 $4.91
    • 10 $3.261
    • 100 $4.91
    • 1000 $1.926
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    SPB20N60C3ATMA1 Reel 1,000 1,000
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    • 1000 $1.86088
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    Avnet Americas SPB20N60C3ATMA1 Reel 7,000 15 Weeks 1,000
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    • 1000 $1.55232
    • 10000 $1.39917
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    Newark SPB20N60C3ATMA1 Cut Tape 5,880 1
    • 1 $4.31
    • 10 $3
    • 100 $2.2
    • 1000 $2.07
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    Ameya Holding Limited SPB20N60C3ATMA1 386
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    EBV Elektronik SPB20N60C3ATMA1 235,000 16 Weeks 1,000
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    New Advantage Corporation SPB20N60C3ATMA1 187,000 1
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    Win Source Electronics SPB20N60C3ATMA1 25,719
    • 1 -
    • 10 $6.1229
    • 100 $4.7404
    • 1000 $4.7404
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    Vishay Siliconix SIHP120N60E-GE3

    MOSFET N-CH 600V 25A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP120N60E-GE3 Tube 844 1
    • 1 $5.95
    • 10 $5.95
    • 100 $5.95
    • 1000 $2.31375
    • 10000 $2.31375
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    Vishay Siliconix SIHB120N60E-T5-GE3

    N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB120N60E-T5-GE3 Cut Tape 795 1
    • 1 $6.03
    • 10 $4.04
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    Find more 20N60 price and stock on Findchips.com

    20N60 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N60A4 Fairchild Semiconductor 600V, SMPS Series N-Channel IGBTsnull Original PDF
    20N60B IXYS Hiperfast(tm) Igbt Original PDF
    20N60B3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60B3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60B3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60BD1 IXYS Hiperfast(tm) Igbt Original PDF
    20N60C3DR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60C3R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60C3R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N60B

    Abstract: s9011
    Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF 20N60B O-24s 20N60B s9011

    20n60B

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		PDF 20N60B O-220AB O-263 20n60B

    20N60 datasheet

    Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60
    Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original     		PDF 20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60

    mosfet 20n60

    Abstract: 20n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587 mosfet 20n60

    20N60

    Abstract: 20N60 mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original     		PDF 20N60 20N60 QW-R502-587 20N60 mosfet

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,


    Original     		PDF 20N60 20N60B O-220

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c5

    Abstract: DSA003709
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220 20070625a DSA003709

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET


    Original     		PDF 20N60C5 O-247 O-220 20080523d

    20N60 to220

    Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1
    Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original     		PDF 20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1

    20n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF 20N60B 20N60B O-268 O-247

    20N60C

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20N60C

    20n60

    Abstract: No abstract text available
    Text: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original     		PDF 20N60 20N60B O-220 20N60B IXDP20N06B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		PDF 20N60B O-220AB O-263

    20N60C

    Abstract: UPS 380v
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v

    UPS 380v

    Abstract: 20n60c power switching
    Text: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM


    Original     		PDF 20N60C ISOPLUS220TM 220LVTM E153432 728B1 065B1 123B1 UPS 380v 20n60c power switching

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original     		PDF 20N60C5M O-220 20070704a

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    Untitled

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 20N60B2D1 IC110 8-06B 405B2

    20N60

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 20N60 15N60 O-247 O-204 O-204 O-247 20N60

    Untitled

    Abstract: No abstract text available
    Text: h IXYS v HiPerFET Power MOSFETs " IXFH/IXFM15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15


    OCR Scan     		PDF IXFH/IXFM15N60 15N60 20N60 20N60 O-247 O-204

    IXYS CS 2-12

    Abstract: No abstract text available
    Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD


    OCR Scan     		PDF 15N60 20N60 O-247 IXYS CS 2-12