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    16N60 Search Results

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    16N60 Price and Stock

    STMicroelectronics STD16N60M2

    MOSFET N-CH 600V 12A DPAK
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    STMicroelectronics STL16N60M2

    MOSFET N-CH 600V 8A POWERFLAT HV
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    STMicroelectronics STL16N60M2 1,017 1
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    STMicroelectronics STL16N60M6

    MOSFET N-CH 600V POWERFLAT HV
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    DigiKey STL16N60M6 Cut Tape 1,922 1
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    STL16N60M6 Digi-Reel 1,922 1
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    STMicroelectronics STL16N60M6 1
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    onsemi FCP16N60

    MOSFET N-CH 600V 16A TO220-3
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    DigiKey FCP16N60 Tube 1,840 1
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    TME FCP16N60 1
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    Richardson RFPD FCP16N60 1,000
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    STMicroelectronics STF16N60M6

    MOSFET N-CH 600V TO220-3 FP
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    DigiKey STF16N60M6 Tube 1,174 1
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    Mouser Electronics STF16N60M6 61
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    16N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16N60

    Abstract: 16N60C2D1
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original
    PDF 16N60C2 16N60C2D1 IC110 ID110 16N60C2D1 O-220 728B1 123B1 16N60

    16N60B2D

    Abstract: No abstract text available
    Text: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings


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    PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 405B2 16N60B2D

    16N60

    Abstract: IXSP16N60 IXSA16N60
    Text: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


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    PDF 16N60 16N60 IXSP16N60 IXSA16N60

    Untitled

    Abstract: No abstract text available
    Text: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original
    PDF 16N60U1

    16N60C2D1

    Abstract: 16N60C2 E153432 IXGC16N60C2D1
    Text: IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original
    PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 405B2 16N60C2D1 16N60C2 E153432

    16N60

    Abstract: IXGC16N60B2D1
    Text: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TMA/ 405B2 16N60

    16N60

    Abstract: 16N60C2D1 IXGC16N60C2D1 16N60C2
    Text: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings


    Original
    PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 065B1 728B1 123B1 728B1 16N60 16N60C2D1 16N60C2

    16N60C2D1

    Abstract: 16n60c2 16N60
    Text: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings


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    PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 065B1 728B1 16N60

    b1113

    Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
    Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2


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    PDF PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14

    ID110

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original
    PDF 16N60C2 16N60C2D1 16N60C2D1 IC110 ID110 O-263 O-220

    16N60C2D1

    Abstract: 16N60 IF110
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGH 16N60C2D1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


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    PDF 16N60C2D1 IC110 O-247 IF110 065B1 728B1 123B1 728B1 16N60C2D1 16N60 IF110

    igbt induction cooker

    Abstract: IF110 16N60B2D1 16N60 IXGH 16N60B2D1 IXGH16N60B2D1
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    PDF 16N60B2D1 IC110 IF110 16N60B2D1 O-247 065B1 728B1 123B1 728B1 igbt induction cooker IF110 16N60 IXGH 16N60B2D1 IXGH16N60B2D1

    16N60

    Abstract: 16N60B2 16N60B2D IXGC16N60B2D1 E153432
    Text: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original
    PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TM0 405B2 16N60 16N60B2 16N60B2D E153432

    16N60

    Abstract: igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    PDF 16N60B2D1 IC110 IF110 16N60B2D1 O-247 065B1 728B1 123B1 728B1 16N60 igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B

    Untitled

    Abstract: No abstract text available
    Text: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original
    PDF 16N60U1 O-247

    fma16n60e

    Abstract: FMA16N60E,16N60E
    Text: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original
    PDF MS5F6841 FMA16N60E H04-004-05 H04-004-03 fma16n60e FMA16N60E,16N60E

    16n60e

    Abstract: 16N60 TO-220F JEDEC
    Text: DATE CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original
    PDF FMP16N60E MS5F6840 H04-004-05 H04-004-03 16n60e 16N60 TO-220F JEDEC

    16n60e

    Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
    Text: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original
    PDF FMI16N60E FMC16N60E FMB16N60E MS5F6842 MS5F68e H04-004-03 16n60e marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE

    16N60

    Abstract: 16n60 b
    Text: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT1 LU ^C 25 V CE(sat)typ Short Circuit SOA Capability Symbol V CES Maximum Ratings Test Conditions v CES Tj = 25°C to 150°C 600 V VcoR T,J = 25°C to 150°C; RG E = 1 MCI 600 V VGES VG E M Continuous


    OCR Scan
    PDF 16N60 16N60 T0-220AB O-263AA 16n60 b

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


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    PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS IXSH 16N60U1 Low VCE sat „, „ IGBT with Diode V CES I C25 V CE(sat)typ Short Circuit SOA Capability 600V 16A 1.8V Preliminary data sheet Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan
    PDF 16N60U1

    16N60

    Abstract: RGE 17-18 7B732 IXSA16N60 IXSP16N60
    Text: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT Short Circuit SOA Capability V ' ces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V vy g e s Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc = 25 °C 32 A 'c 9 0 Tc = 90°C


    OCR Scan
    PDF 16N60 16N60 T0-220AB 4bflb22b 7B732 RGE 17-18 IXSA16N60 IXSP16N60

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S IXSA 16N60 v CES IXSP 16N60 ^C25 IGBT LOW V CE sat 600V 16A 1.8V v CE(sat)typ Short Circuit SOA Capability Prelim inary Data Sheet Symbol Test Conditions Maximum Ratings v CES Tj = 25° C to 150° C 600 V VCGR v GES Tj = 25°Cto150°C;RGE=1 MQ 600


    OCR Scan
    PDF 16N60 16N60 Cto150 T0-220AB O-263AA Wei40

    920vc

    Abstract: No abstract text available
    Text: n ix Y S L O w V C B M IG IXSH 16N60U1 VCES B T with Diode 600V 16A 1.8V IC25 v Short Circuit SOA Capability CE sat typ Preliminary data sheet Symbol Test Conditions VCES Tj =25°Cto150°C 600 V v CGR Tj = 25° C to 150° C; R G6 = 1 MO 600 V v GES Continuous


    OCR Scan
    PDF 16N60U1 Cto150 O-247 920vc