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STMicroelectronics STB40N60M2 MOSFET N-CH 600V 34A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB40N60M2	Digi-Reel	2,207		1	1 $6.21 10 $4.17 100 $6.21 1000 $2.51756 10000 $2.51756	Buy Now
	STB40N60M2	Cut Tape	2,207		1	1 $6.21 10 $4.17 100 $6.21 1000 $2.51756 10000 $2.51756	Buy Now
	STB40N60M2	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.45 10000 $2.45	Buy Now
Avnet Americas	STB40N60M2	Reel			1,000	1 - 10 - 100 - 1000 $2.45 10000 $2.30496	Buy Now
Mouser Electronics	STB40N60M2		2,644			1 $5.88 10 $4.04 100 $2.94 1000 $2.45 10000 $2.45	Buy Now
STMicroelectronics	STB40N60M2		2,644		1	1 $5.76 10 $3.96 100 $2.88 1000 $2.46 10000 $2.46	Buy Now
TME	STB40N60M2				1	1 $4.21 10 $3.9 100 $3.72 1000 $3.09 10000 $3.09	Get Quote

Avnet Silica	STB40N60M2		44,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	STB40N60M2	Cut Tape	920			1 $5.06 10 $3.56 100 $2.65 1000 $2.49 10000 $2.49	Buy Now
EBV Elektronik	STB40N60M2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FGH40N60UFDTU IGBT FIELD STOP 600V 80A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGH40N60UFDTU	Tube	1,293		1	1 $4.82 10 $4.82 100 $2.89467 1000 $2.17888 10000 $2.17888	Buy Now
Mouser Electronics	FGH40N60UFDTU		904			1 $4.72 10 $4.39 100 $2.82 1000 $2.5 10000 $2.5	Buy Now
Newark	FGH40N60UFDTU	Bulk	328		1	1 $5.3 10 $4.8 100 $3.74 1000 $3.36 10000 $3.36	Buy Now
TME	FGH40N60UFDTU		20		1	1 $4.29 10 $3.59 100 $3.23 1000 $3.04 10000 $3.04	Buy Now
Richardson RFPD	FGH40N60UFDTU				450	1 - 10 - 100 - 1000 $2.18 10000 $2.18	Buy Now

Avnet Asia	FGH40N60UFDTU			20 Weeks	450	1 - 10 - 100 - 1000 $2.32413 10000 $2.15198	Buy Now
Avnet Silica	FGH40N60UFDTU			21 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FGH40N60UFDTU		300	22 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FGH40N60UFDTU		1,498			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	FGH40N60UFDTU		240		1	1 - 10 - 100 $3.98 1000 $3.68 10000 $3.68	Buy Now
Vishay Siliconix SIHJ240N60E-T1-GE3 MOSFET N-CH 600V 12A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHJ240N60E-T1-GE3	Digi-Reel	1,100		1	1 $3.56 10 $2.327 100 $3.56 1000 $1.22811 10000 $1.22811	Buy Now
	SIHJ240N60E-T1-GE3	Cut Tape	1,100		1	1 $3.56 10 $2.327 100 $3.56 1000 $1.22811 10000 $1.22811	Buy Now
STMicroelectronics STWA40N60M2 MOSFET N-CHANNEL 600V 34A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STWA40N60M2	Tube	600		1	1 $5.72 10 $3.864 100 $5.72 1000 $5.72 10000 $5.72	Buy Now
Newark	STWA40N60M2	Bulk			600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STWA40N60M2		5		1	1 $5.16 10 $3.57 100 $2.9 1000 $2.9 10000 $2.9	Buy Now
TME	STWA40N60M2				1	1 $6.29 10 $5 100 $4.5 1000 $4.5 10000 $4.5	Get Quote
Avnet Silica	STWA40N60M2			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STWA40N60M2			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IGW40N60TPXKSA1 IGBT TRENCH/FS 600V 67A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGW40N60TPXKSA1	Tube	359		1	1 $3.65 10 $3.65 100 $1.994 1000 $1.35927 10000 $1.19663	Buy Now
Avnet Americas	IGW40N60TPXKSA1	Tube		19 Weeks	480	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IGW40N60TPXKSA1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	IGW40N60TPXKSA1		8,919		1	1 $1.33 10 $1.33 100 $1.25 1000 $1.13 10000 $1.13	Buy Now
EBV Elektronik	IGW40N60TPXKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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40N60 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
40N60A	IXYS	Low Vce(sat) IGBT High Speed IGBT	Original	PDF
40N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
40N60SCD1	IXYS	CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM	Original	PDF
40N60SCD1	IXYS	CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM	Original	PDF

40N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO247AD Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions	Original	PDF	40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
IXGR40N60 Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1 Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1
40n60 Abstract: 40N60B2D1 40N60B2 Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching	Original	PDF	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 065B1 728B1 123B1 40n60 40N60B2D1
Untitled Abstract: No abstract text available Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	PDF	40N60C ISOPLUS220TM E72873 20080523a
40n60c Abstract: mosfet 4800 E72873 Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	PDF	40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873
IXGR40N60C2D1 Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) IXGR40N60C2D1 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K
40n60c2 Abstract: No abstract text available Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	PDF	40N60C2 O-268 IC110 O-247 40n60c2
Untitled Abstract: No abstract text available Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	PLUS247 40N60BD1 40N60BD1 247TM
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600	Original	PDF	247TM 40N60BD1
Untitled Abstract: No abstract text available Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	PDF	ISOPLUS247TM 40N60CD1
43N60 Abstract: 40N60 max4340 MOSFET 40A 600V Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	PDF	200ns 200ns 43N60 40N60 40N60 O-264 max4340 MOSFET 40A 600V
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet	Original	PDF	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 ISOPLUS247 E153432 IF110 2x31-06B
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	PDF	40N60C2 O-268 IC110 O-247
40N60SCD1 Abstract: ixkf40n60scd1 IXYS DS 145 Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873	Original	PDF	40N60SCD1 E72873 20110201b 40N60SCD1 ixkf40n60scd1 IXYS DS 145

diode b34 Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110 Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	40N60BD1 PLUS247 diode b34 b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor C110
40N60BD1 Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60 Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	ISOPLUS247TM 40N60B 40N60BD1 lead40N60BD1) 728B1 40N60B 40N60 IXGR40N60BD1 IXGR40N60
40n60c2d1 Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	PDF	40N60C2D1 O-247 IC110 40n60c2d1 *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
TO-264 Abstract: 40N60BD1 PLUS247 Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	40N60BD1 PLUS247 TO-264 40N60BD1 PLUS247
40N60BD1 Abstract: No abstract text available Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	PDF	247TM 40N60BD1 728B1
43N60 Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60 Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	PDF	43N60 40N60 200ns O-264 43N60 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Untitled Abstract: No abstract text available Text: CoolMOSTM Power MOSFET IXKC 40N60C in ISOPLUS220TM Package Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 600 V ID25 = 24 A Ω RDS(on) = 96 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	PDF	40N60C ISOPLUS220TM E153432 405B2
IXGR40N60C2D1 Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1 Text: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions	Original	PDF	40N60C2 40N60C2D1 ISOPLUS247TM 247TM 728B1 123B1 728B1 065B1 IXGR40N60C2D1 40N60C2 40N60c2d1 ixgr 40N60c2d1
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1
BTS 2146 Abstract: No abstract text available Text: n ix Y S IGBT IXSH 40N60 Low VCE sat VCES I C25 v CE(sat) 600 V 75 A 2.5 V Short Circuit SOA Capability Symbol Test Conditions V CES T j =25°C to150°C 600 V VCGR T d = 25° C to 150° C; ReE = 1 M£2 600 V VSES Continuous ±20 V vOEM Transient ±30 V 'c25	OCR Scan	PDF	40N60 to150 O-247AD BTS 2146

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40N60 Search Results

40N60 Price and Stock

STMicroelectronics STB40N60M2

onsemi FGH40N60UFDTU

Vishay Siliconix SIHJ240N60E-T1-GE3

STMicroelectronics STWA40N60M2

Infineon Technologies AG IGW40N60TPXKSA1

40N60 Datasheets (4)

40N60 Datasheets Context Search

TO247AD

IXGR40N60

40n60

Untitled

40n60c

IXGR40N60C2D1

40n60c2

Untitled

Untitled

Untitled

43N60

Untitled

Untitled

40N60SCD1

diode b34

40N60BD1

40n60c2d1

TO-264

40N60BD1

43N60

Untitled

IXGR40N60C2D1

B1116

BTS 2146