Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
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PDF
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117100A
HY5117100A
HY5117100Ato
tRASI13)
1RP02)
1AD20-10-MAY94
HY51171OOA
HY5117100AJ
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for
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OCR Scan
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HYM581600
HY5116100
HYM581600M/LM/TM/LTM
HYM581600TM/LTM
1BD01-00-MAY93
HYM581600M
HYM581600LM
HYM581600TM
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PDF
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Untitled
Abstract: No abstract text available
Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000B
HY514400A
22//F
HYM581000BM/BLM
1BB05-00-MAY93
4b750fifi
4b75Dflfl
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5116400
1AD02-10-APR93
HY5116400JC
HY5116400LJC
HY5116400TC
HY5116400LTC
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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OCR Scan
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HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
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HY514460
Abstract: No abstract text available
Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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HY514460
Kx164
16-bit
400mil
40pin
40/44pin
1AC12-00-APR93
DDQ1553
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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OCR Scan
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HY514410A
8-10-A
4b750fl
000147b
HY514410AJ
HY514410AU
HY514410AT
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY62256B-I
1DC05-11-MAY94
HY62256BLP-I
HY62256BLLP-I
HY62256BU-I
HY62256BLU-I
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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128KX
HY628100A-I
1DD03-11-MAY94
0Q037hD
HY628100ALP-I
HY628100ALLP-I
HY628100ALG-I
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PDF
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117810
HY5117810
1AD10-10-MAY94
HY5117810JC
HY5117810SLJC
HY5117810TC
HY5117810SLTC
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.
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HYM536400B
36-bit
HY5116400
HYM536400BM/BLM
HYM536400BMG/BLMG
1CE05-00-MAY93
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PDF
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Untitled
Abstract: No abstract text available
Text: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY6264A
speed-70/85/100/120ns
1DB01-11-MAY94
HY6264AP
HY6264ALP
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PDF
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY628400-I Series _ 512Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY628400-I
512Kx
1DE02-11-MAY94
4b750flfl
D003fll2
HY628400LP-I
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY62256B-I
05-11-MAY95
Mb75Dflfi
HY62256BLP-I
HY62256BLLP-I
HY62256BU-I
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PDF
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HY53C464LS
Abstract: HY53C464
Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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OCR Scan
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HY53C464
330mil
18pin
4b750afl
1AA02-20-APR93
HY53C464S
HY53C464LS
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5117400
1AD05-20-MAR94
4b750fifi
HY5117400JC
HY5117400UC
HY5117400TC
HY5117400LTC
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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OCR Scan
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees
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OCR Scan
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HY62V8400C
HY62V8400
55/70/85/100ns
-100/120/150/200ns
45defl
10E03-11
MAY94
4b750fifi
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PDF
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Untitled
Abstract: No abstract text available
Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V16410A
HY51V1641
D32-00-MAY94
4b75Dflfl
HY51V16410AJC
HY51V16410ASLJC
HY51V16410ATC
HY51V16410ASLTC
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PDF
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