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    HY5116100 Price and Stock

    SK Hynix Inc HY5116100BT-60

    16M X 1 FAST PAGE DRAM, 60 NS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5116100BT-60 23,975
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
    		Buy Now

    SK Hynix Inc HY5116100JC-60

    FAST PAGE DRAM, 16MX1, 60NS, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5116100JC-60 16
    • 1 $12.5
    • 10 $9.375
    • 100 $9.375
    • 1000 $9.375
    • 10000 $9.375
    		Buy Now

    HY5116100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    HY5116100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM5321600AM

    Abstract: HYM5321600ATM HYM5321600ATMG 16Mx32 HY5116100B
    Text: HYM5321600A M-Series 16Mx32 bit FP DRAM MODULE based on 16Mx1 DRAM, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5321600A M-Series is a 16Mx32-bit Fast Page mode CMOS DRAM module consisting of thirtytwo HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and


    Original     		PDF HYM5321600A 16Mx32 16Mx1 16Mx32-bit HY5116100B HYM5321600AM/ATM HYM5321600AMG/ATMG 72-Pin 106mW HYM5321600AM HYM5321600ATM HYM5321600ATMG

    ATMG

    Abstract: HYM5361600A HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG
    Text: HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM5361600A 16Mx36 16Mx1 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 119mW ATMG HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. HY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    Untitled

    Abstract: No abstract text available
    Text: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 22/xF HYM581600M/LM/TM/LTM 891MAX HYM581600TM/LTM 25IMAX. 1BD01-01-FEB94

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM

    HY5116100

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s SEMICONDUCTOR 16M X 1-blt CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-APR93 HY5116100JC HY5116100LJC HY5116100TC HY5116100LTC HY5116100RC

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF


    OCR Scan     		PDF HYM5361600A 16Mx36 16Mx1 361600A 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 256ms

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 0 0 A S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100Ais HY5116100A HY5116100Ato 1AD19 HY5116100AJ HY5116100ASU HY5116100AT HY5116100ASLT HY5116100AR

    hy5116100

    Abstract: No abstract text available
    Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161OOA HY5116100A HY51161 C1801 4b750Ã 1AD19-10-MAYÃ HY5116100AJ HY51161OOASLJ hy5116100

    ABO-20 L

    Abstract: 1mx1 DRAM
    Text: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-MAY94 0005AB7 HY5116100JC HY5116100LJC HY5116100TC ABO-20 L 1mx1 DRAM

    Untitled

    Abstract: No abstract text available
    Text: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 HYM591600M/LM/TM/LTM HYM591600M/LM 1-781MIN. HYM591600TM/LTM 0-05f1 76MIN. 03IMIN.

    Untitled

    Abstract: No abstract text available
    Text: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 HYM591600M/LM/TM/LTM HYM591600M/LM HYM591600TM/LTM 1BD03-00-MAY93 HYM591600M HYM591600LM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM 1BD01-00-MAY93 HYM58160 HYM581600TM/LTM 251MAX 01-00-M

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    MAY94

    Abstract: RASOA11
    Text: HY5116100 Series «HYUNDAI 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-MAY94 HY5116100JC HY5116100UC HY5116100TC HY5116100LTC MAY94 RASOA11

    Untitled

    Abstract: No abstract text available
    Text: HY5116100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s 16Mx1-btt C M O S D R A M DESCRIPTION "The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF 16Mx1-btt HY5116100 1AD01-10-MAY94 HY5116100JC HY5116100UC HY5116100TC HY5116100LTC

    Untitled

    Abstract: No abstract text available
    Text: HYM5321600A M-Series -H Y U N D A I 16MX32 bit FP DRAM MODULE based on 16Mx1 DRAM, SV, 4K-Refresh GENERAL DESCRIPTION The HYM5321600A M-Series is a 16Mx32-bit Fast Page mode CMOS DRAM module consisting of thirtytwo HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 uF and


    OCR Scan     		PDF HYM5321600A 16MX32 16Mx1 16Mx32-bit HY5116100B HYM5321600AM/ATM HYM5321600AMG/ATMG 72-Pin 256ms

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HY51161OOA Series 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161OOA HY5116100A Y51161 24/2S 1AD19-10-MAY95 HY5116100AJ HY5116100ASLJ HY5116100AT

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100A HY5116100A 4b750Ã 1AD19-10-MAY95 D004321 HY5116100AJ HY5116100ASLJ HY5116100AT

    D-0300

    Abstract: No abstract text available
    Text: “H Y U N D A I SEMICONDUCTOR H Y M 591600 S e r ie s 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22\iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 22\iF HYM591600M/LM/TM/LTM 1BD03-00-MAY93 HYM591600M/LM HYM591600TM/LTM D-0300

    Untitled

    Abstract: No abstract text available
    Text: HY5116100A "H YU N D A I 16M DESCRIPTION X 1-bit CMOS DRAM ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 16,777,216 x 1-bit configuration w ith Fast Page m ode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the


    OCR Scan     		PDF HY5116100A HY5116100AJ HY5116100ASLJ

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161 HY5116100Ato 9-10-MAY94 HY5116100A HY5116100AJ HY5116100ASU HY5116100AT HY51161OOASLT HY5116100AR

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A HY51V16100A V16100Ato 1AD21-0O-MAY94 HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V161OOASLT HY51V16100AR