HYM564400A
Abstract: No abstract text available
Text: HYM564400A N-Series 4Mx64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glassepoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The
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HYM564400A
4Mx64-bit
64-bit
HY5116400A
16-bit
HYM564400ANG/ATNG/ASLNG/ASLTNG
110mW
198mW
A0-A11
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HY5117400C
Abstract: HY5117400CJ
Text: HY5117400C,HY5116400C 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117400C
HY5116400C
HY5117400CJ
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HY5117400C
Abstract: HY5117400CJ
Text: HY5117400C,HY5116400C 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117400C
HY5116400C
10/Sep
HY5117400CJ
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socket, 72 pin, simm
Abstract: No abstract text available
Text: HYM572A400A N-Series 4Mx72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM572A400ATNG/ASLTNG is
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HYM572A400A
4Mx72-bit
72-bit
HY5116400A
16-bit
HYM572A400ATNG/ASLTNG
121mW
220mW
A0-A11
socket, 72 pin, simm
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HY5117400B
Abstract: HY5116400B HY5117400 4Mx4 DRAM
Text: HY5117400B,HY5116400B 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117400B
HY5116400B
HY5116400B
HY5117400
4Mx4 DRAM
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-APR93
HY5116400JC
HY5116400LJC
HY5116400TC
HY5116400LTC
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.
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HYM536400B
36-bit
HY5116400
HYM536400BM/BLM
HYM536400BMG/BLMG
1CE05-00-MAY93
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for
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HYM540A400
40-blt
HY5116400
HYM540A400M/LM/TM/LTM
HYM540A400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM540400TM/TMG
1CE08-01-FEB94
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HY5116400
Abstract: I3101A Hyundai Semiconductor dram
Text: HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
Schottk160)
2-10-A
HY5116400JC
HY5116400LJC
HY5116400TC
I3101A
Hyundai Semiconductor dram
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY5116400 Series 4M x 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-MAY94
HY5116400JC
HY5116400UC
HY5116400TC
HY5116400LTC
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HY5117400CJ
Abstract: MAX7523
Text: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117400C
HY5116400C
A0-A11)
HY5117400CJ
MAX7523
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MAX7523
Abstract: No abstract text available
Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.
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HY5117400A,
HY5116400A
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
HY5116400AJ
Y5116400ASLJ
HY5116400AT
HY5116400ASLT
MAX7523
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Untitled
Abstract: No abstract text available
Text: • HSEMICONDUCTOR YUNDAI HYM540400 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5116400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each
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HYM540400
40-bit
HY5116400
HYM540400M/LM/TM/LTM
HYM540400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM540400TM/TMG
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
1A023-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY5116400AT
HV51164CX
HY5116400AR
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HY5116400A
Abstract: No abstract text available
Text: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
04711JOOl
43c12
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each
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HYM540400
40-bit
HY5116400
22/iF
HYM540400M/LM/TM/LTM
HYM540400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM54Ã
400TM/TMG
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TAA 691
Abstract: No abstract text available
Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASU
HY5116400Ã
HY5116400ASLT
TAA 691
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI HYM572A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOP-ll and two 16-bit BiCMOS line drivers in TSSOP on a t68 pin glass-epoxy printed circuit board.
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HYM572A400A
72-bit
HY5116400A
16-bit
HYM572A400ATNG/ASLTNG
121mW
220mW
A0-A11
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CH371
Abstract: No abstract text available
Text: " H Y U H D ftl HYM572A400A N-Series 4Mx72-btt CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS tin driver in TSSOP on a 168 pin glass-epoxy
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HYM572A400A
4Mx72-btt
72-bit
HY5116400A
16-bit
22nFdecoupiing
HYM572A400ATNG/ASLTNG
121mW
220mW
CH371
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AY83
Abstract: TCA 810 KA5 capacitor
Text: H Y U ND A I SEMICONDUCTOR HYM536400B Series 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CM O S DRAM module consisting of nine HY5116400 In 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor Is mounted for each DRAM.
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HYM536400B
36-bit
HY5116400
22ftF
HYM536400BM/BLM
HYM536400BMG/BLMG
1CE05-00-MAY93
AY83
TCA 810
KA5 capacitor
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Untitled
Abstract: No abstract text available
Text: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-MAV94
4b750fifi
HY5116400JC
HY5116400UC
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IN2804
Abstract: No abstract text available
Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.
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HYM539400
39-bit
HY5116400
HYM539400MG/
1CE10-10-MAY94
DQD3S35
IN2804
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM564400A N-Series 4M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-brt Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOF-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit
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HYM564400A
64-bit
64-brt
HY5116400A
16-bit
HYM564400ANGMTNGVASLNGyASLTNG
110mW
198mw
A0-A11
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