HYM532810BM
Abstract: HY5117400B HYM532810B HYM532810BMG
Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532810B
8Mx32
8Mx32-bit
HY5117400B
HYM532810BM
HYM532810BMG
72-Pin
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HY5117400B
Abstract: HY514100A
Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536410B
4Mx36
4Mx36-bit
HY5117400B
HY514100A
HYM536410BM
HYM536410BMG
72-Pin
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HY5117400B
Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536810D
8Mx36
8Mx36-bit
HY5117400B
HY514100A
HYM536810DM
HYM536810DMG
72-Pin
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HYM532410BM
Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532410B
4Mx32
4Mx32-bit
HY5117400B
HYM532410BM
HYM532410BMG
72-Pin
HYM532410
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1CE13-10-DEC94
Abstract: HY5117400A
Text: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted
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HYM532410A
4Mx32-bit
32-bit
HY5117400A
HYM532410AAM/ASLM/ATM/ASLTM
HYM532410AMG/ASLMG/ATMG/ASLTMG
1CE13-10-DEC94
72pin
1CE13-10-DEC94
HY5117400A
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Untitled
Abstract: No abstract text available
Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532810C
8Mx32
8Mx32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pin
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
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HYM53
Abstract: No abstract text available
Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each
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HYM536A810A
36-bit
HYM536A81OA
HY5117400A
HYM536A81OAM/ASLM
HYM536A810AMG/ASLMG
HYM536A800A/ASL
1CF16-10-AUG95
HYM53
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HYM536410MG
Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling
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HYM536410
36-blt
36-bit
HY5117400
HY514100A
HYM53641OM/LM
HYM536410MG/LMG
1CE06-20-MAV94
HYM536410MG
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
1AD27-10-MAY94
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5117400
1AD05-20-MAR94
4b750fifi
HY5117400JC
HY5117400UC
HY5117400TC
HY5117400LTC
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HYM532810
Abstract: HY5117400 HYM53
Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,
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HYM532810
32-blt
32-bit
HY5117400
HYM532810M/LM
HYM532810MG/LMG
1CF02-10-JUN94
4b75D
0D03577
HYM53
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hym536810
Abstract: HYM53
Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.
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HYM536810
36-blt
36-bit
HY5117400
HY514100A
22fiF
HYM53681OM/LM/TM/LTM
HYM53681OMG/LMG/TMG/LTMG
HYM53681OT/LT
HYM53
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M53241
Abstract: No abstract text available
Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is
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HYM532410
32-bit
HY5117400A
HYM532410TNG/SLTNG
32va24
004J1
1DE02-10-AUG95
M53241
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Untitled
Abstract: No abstract text available
Text: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.
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HYM572A410A
72-bit
HY5117400A
16-bit
HYM572A410ATNG/ASLTNG
DQ0-DQ72)
1EE11-10-DEC94
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PD1-P04
Abstract: No abstract text available
Text: “ H Y U M P f t l • HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8M x32-bit Fast Page mode CMOS DRAM m odule consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1
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HYM532810C
8Mx32
x32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pln
72iMiN.
PQ062
PD1-P04
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Untitled
Abstract: No abstract text available
Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin
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8Mx36-blt
HYM536810A
36-bit
HY5117400A
HY514100A
HYM53681OAM/ASLM/ATM/ASLTM
HYM53681OAMG/ALMG/ATMG/ALTMG
1CE13-10-DEC94
HYM536810AM
HYM53681
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HY5117400CJ
Abstract: MAX7523
Text: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5117400C
HY5116400C
A0-A11)
HY5117400CJ
MAX7523
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HYUNDAI SEMICONDUCTOR
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5117400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each
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HYM540410
40-bit
HY5117400
HYM54041OM/LM/TM/LTM
HYM54041OMG/LMG/TMG/LTMG
HYM540410M/LM
HYM54041
HYUNDAI SEMICONDUCTOR
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PP-T20
Abstract: HY5117400B bel power QBS
Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400B
HY5117400B
Y5117400B
4b750fl
1AD46-00-MAY9S
GG0457E
HY5117400BJ
HY5117400BSLJ
PP-T20
bel power QBS
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling
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HYM594000B
HY5117400
HY514100A
22jiF
HYM594000BM/BLM
1BC06-11-MAR94
50fifi
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Untitled
Abstract: No abstract text available
Text: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM532810A
8Mx32-blt
32-bit
HY5117400A
HYM532810AM/ASLM/ATM/ASLTM
HYM53281OAMG/ALMG/ATMG/ALTMG
72pin
HYM53281OA/AL
HYM532810AT/ALT
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MAX7523
Abstract: No abstract text available
Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.
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HY5117400A,
HY5116400A
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
HY5116400AJ
Y5116400ASLJ
HY5116400AT
HY5116400ASLT
MAX7523
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HY5116400BT
Abstract: No abstract text available
Text: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this
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HY5117400B,
HY5116400B
A0-A11)
HY5116400BT
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