23A512-I
Abstract: 23A512 23LC512-I 23LC512
Text: 23A512/23LC512 512Kbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Number VCC Range Dual I/O SDI Quad I/O (SQI) Max. Clock Frequency 23A512 1.7-2.2V Yes Yes 20 MHz SN, ST, P 23LC512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Packages Features:
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23A512/23LC512
512Kbit
23A512
23LC512
32-byte
DS25155A-page
23A512-I
23LC512-I
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Untitled
Abstract: No abstract text available
Text: 8 Bit PLCC EPROMs 512Kbit and smaller UniROM User's Manual 84
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512Kbit
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A25L05PT
Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Text: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date
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A25L20P/A25L10P/A25L05P
512Kbit,
85MHz
512Kbit
203mm
A25L05PT
A25L05PU
25L05P
A25L05P
A25L10P
A25L20P
25L10P
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LH28F800BVE-BTL90
Abstract: LHF80V11
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVE-BTL90 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V11) Issue Date: September 20, 1999 sharp LHF80V11 ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F800BVE-BTL90
512Kbit
LHF80V11)
LHF80V11
LH28F800BVE-BTL90
LHF80V11
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LH28F800BVHE-BV85
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVHE-BV85 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V37) Spec No.: EL109096A Issue Date: September 27, 1999 sharp LHF80V37 ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F800BVHE-BV85
512Kbit
LHF80V37)
EL109096A
LHF80V37
LH28F800BVHE-BV85
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FM24C512
Abstract: FM24C512-G FM24V05
Text: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM24C512
512Kb
512Kbit
FM24C512
512-kilobit
FM24C512,
FM24C512-G
A60003G1
FM24V05
FM24C512-G
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V54C316162V 200/183/166 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 V54C316162V -5 -55 -6 Unit 200 183 166 MHz Latency 3 3 3 clocks Cycle Time tCK 5 5.5 6 ns Access Time (tAC) 5 5.3 5.5 ns Clock Frequency (tCK)
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V54C316162V
512Kbit
V54C316162V
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Untitled
Abstract: No abstract text available
Text: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)
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IS25CD512/010
IS25LD020
512Kbit/1
512Kbit
IS25CD512:
IS25CD010:
IS25LD020:
512Kb
32KByte
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Untitled
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
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ML2250
Abstract: ML22Q54
Text: 1 ML2250 Series PRODUCT INTRODUCTION SHEET January 22, 2004 VOICE SYNTHESIS LSIs WITH 2 CHANNEL MIXING Description ML2250 series are voice synthesizer LSIs with 512kbit to 6MBit internal ROM plus 2-channel mixing playback function. The volume of each channel can be controlled independently. A “phrase control table” in ROM allows preprogramming of individual phrases to form a sentence
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ML2250
512kbit
14-bit
ML22Q54
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V54C316162V
Abstract: No abstract text available
Text: MOSEL VITELIC V54C316162V V54C316162V 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3 5.5
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V54C316162V
512Kbit
V54C316162V
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vdfpn8
Abstract: M25P16 VDFPN8 8x6mm MLP8 package spi flash m25pxx VDFPN8 package MLP8 M25PXX VDFPN M25P application note
Text: M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical)
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M25PXX
512Kbit
32Mbit
512Kbit)
32Mbit)
40MHz
50MHz
20xxh)
vdfpn8
M25P16 VDFPN8
8x6mm
MLP8 package
spi flash m25pxx
VDFPN8 package
MLP8
M25PXX
VDFPN
M25P application note
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ice27c512
Abstract: No abstract text available
Text: ICE27C512 512kbit 64KX8 OTP EPROM Description The ICE27C512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 5V power supply in normal read mode operation. Any byte can be accessed in less than 70ns. The ICE27C512 typically consumes 10mA , standby
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ICE27C512
512kbit
64KX8)
ICE27C512
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V54C316162VC
Abstract: No abstract text available
Text: MOSEL VITELIC V54C316162VC V54C316162VC 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3
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V54C316162VC
512Kbit
V54C316162VC
L52-3775
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6755w
Abstract: No abstract text available
Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
6755w
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M27G512
Abstract: 27G512
Text: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga nized into 64K words with 8 bits per word. Any byte can be
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FM27C512-L
288-Bit
FM27C512
512Kbit,
256Kb
M27G512
27G512
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Untitled
Abstract: No abstract text available
Text: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the
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48F512
48F512is
512Kbit
s48F512
MD400062/A
48F512
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27C512N
Abstract: No abstract text available
Text: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into
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FM27C512L
FM27C512L
288-Bit
64Kx8)
FM27C512
512Kbit,
27C512
256Kb
27C512N
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CAT71C256L-85
Abstract: cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 CAT28F010 CAT28F512 4Q91
Text: CATALYST SEMICONDUCTOR 1 Device fl CAT28F010 Temp Range » • OOOIB'ÌS Access Time ns Size (Organization) CS T Pkg Types # Pins (Max/Standby) 1 ■ T-90-30 Availability C 1MBit 120/150/200 30mA/100nA 32 P,N 4Q91 CAT28F512 C 512KBit <64Kx8) 200/250 50mA/500pA
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T-90-30
CAT28F010
12SKx8)
30mA/100
CAT28F512
512KBit
64Kx8)
50mA/500pA
CAT28F512V5
CAT71C256L-85
cat22c12
CAT27HC256
cerdip z PACKAGE
lb2f
64KX16
CAT27C210
4Q91
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1N914
Abstract: A14C N28B NM27C512 VA32A
Text: Ju ly 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming Voltage +12.75V ■ Typical programm ing tim e 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-tim e-program m able (OTP) read-only memory (EPROM), or
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
512Kb
150ns
1N914
A14C
N28B
NM27C512
VA32A
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27C512N
Abstract: No abstract text available
Text: PRELIMINARY S E M I C O N D U C T O R TM FM27C512L 524,288-Bit 64Kx8 Low Power Fast EPROM General Description FM27C512L P A .P C H .L D • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into
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FM27C512L
FM27C512L
288-Bit
64Kx8)
FM27C512
512Kbit,
256Kb
27C512N
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM6375 / M SM 6374 1 MSM6373 I MSM6372 1M bit/512Kbit/256K bit M A SK ROM SPEECH SYNTHESIZER G EN ERA L DESCRIPTION The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech processor circuit in conjunction w ith a built-in M ASK ROM fo r speech data storage. Since it has a built-in 12-bit DA
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MSM6375
MSM6373
MSM6372
it/512Kbit/256K
12-bit
MSM6376
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Untitled
Abstract: No abstract text available
Text: July 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming V oltage + 1 2.7 5V ■ Typical programm ing tim e 50ns T h e F M 2 7 L V 5 1 2 is a low voltage, low-power 512Kbit, 3.3V-only
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FM27LV512L
288-Bit
FM27LV512
512Kbit,
150ns,
512Kb
150ns
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M6378A
Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
Text: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family
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128Kbit
256Kbit
512Kbit
63P74
MSM6376
MSM6295
MSM5205
MSM6585
MSM6586
MSM6587
M6378A
MSM6388
MSM62* ADPCM
MSM63* ADPCM
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