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    TP15N Search Results

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    TP15N Price and Stock

    STMicroelectronics STP15N65M5

    MOSFET N CH 650V 11A TO220
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    DigiKey STP15N65M5 Tube 980 1
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    Littelfuse Inc IXTP15N50L2

    MOSFET N-CH 500V 15A TO220AB
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    DigiKey IXTP15N50L2 Tube 581 1
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    STMicroelectronics STP15NK50Z

    MOSFET N-CH 500V 14A TO220AB
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    DigiKey STP15NK50Z Tube 460 1
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    STMicroelectronics STP15NK50Z 1,667 1
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    TME STP15NK50Z 89 1
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    STMicroelectronics STP15N80K5

    MOSFET N-CH 800V 14A TO220
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    DigiKey STP15N80K5 Tube 409 1
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    Avnet Americas STP15N80K5 Tube 14 Weeks 1,000
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    Mouser Electronics STP15N80K5 5,746
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    Newark STP15N80K5 Bulk 29 1
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    STMicroelectronics STP15N80K5 5,746 1
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    Win Source Electronics STP15N80K5 13,500
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    STMicroelectronics STP15N60M2-EP

    MOSFET N-CH 600V 11A TO220
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    DigiKey STP15N60M2-EP Tube 334 1
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    Mouser Electronics STP15N60M2-EP 2,973
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    STMicroelectronics STP15N60M2-EP 2,973 1
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    TME STP15N60M2-EP 1
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    TP15N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TER22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 TER22

    tdr22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 tdr22

    TDR15

    Abstract: TD18N TD68N TP82N TP68N
    Text: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:


    Original
    PDF SS-203

    KL731H

    Abstract: TP33N KL731E
    Text: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202, KL731H TP33N KL731E

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 Dimensions039

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B


    Original
    PDF MIL-STD-202,

    MTP15N05

    Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 TP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high


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    PDF TP15N05 MTP15N06 MTP15N05, -220A MTP15N05 MTP15N06 P-15N 15N05 5N06 5N05

    STP15

    Abstract: No abstract text available
    Text: S T P 15 N 0 5 L s t p i 5 N 0 5 LFI S G S -T H O M S O N ¡m e ra « ¿ 57 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V TP15N 05L S TP15N05LFI dss 50 V 50 V R DS on Id < 0.15 a < 0.15 a 15 A 10 A . TYPICAL RDs(on) = 0.115 Q . AVALANCHE RUGGED TECHNOLOGY


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    PDF STP15N TP15N05LFI 05L/FI ISQWATT220 STP15

    TP15N06V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP15N06V SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


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    PDF MTP15N06V TP15N06V 21A-06 TP15N06V

    15N05L

    Abstract: 15N05 MTP15N05L TP15N05L ne 06l MTM15N06L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM 15N05L MTM 15N06L M TP15N05L M TP15N06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode Silicon Gate TM OS T h e se Lo g ic Le vel T M O S P o w e r F E T s are d esig ned for high


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    PDF 15N05L 15N06L TP15N05L TP15N06L O-204AA 21A-04 O-220AB 15N05 MTP15N05L ne 06l MTM15N06L

    Untitled

    Abstract: No abstract text available
    Text: 772cì537 004b3S0 *ïfll • SGTH 15 06 15 06 SGS-THOMSON H O T «! STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP15N 06L TP15N 06LFI 60 V 60 V R d S oii < 0.15 < 0.15 n n Id 15 A 10 A . TYPICAL RDS(on) = 0.115 Q


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    PDF 004b3S0 TP15N STP15N 06LFI STP15N06L/FI

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N 06VL TMOS V™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


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    PDF MTP15N06VL/D TP15N 21A-06

    TP15N06

    Abstract: P15N06V TP15N06V 15N06VL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP15N06VL TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea prod u ct a bo u t o n e -h a lf th a t ot sta n d a rd M O S FE Ts. This


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    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


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    PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    MTP8N10

    Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA TP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high


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    PDF MTP15N05EL RuggedO-220AB) Y145M 221D-02 O-220 Y145M, 314B03 O-220)

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit