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    2SK313 Search Results

    2SK313 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3134STL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 75A 5Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3134L-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 75A 5Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK3135STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 75A 7.5Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3136-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 75A 5.8Mohm To-220Ab Visit Renesas Electronics Corporation
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    2SK313 Price and Stock

    Diodes Incorporated DMNH6042SK3-13

    MOSFET N-CH 60V 25A TO252
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    DigiKey DMNH6042SK3-13 Digi-Reel 2,297 1
    • 1 $0.85
    • 10 $0.569
    • 100 $0.85
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    DMNH6042SK3-13 Cut Tape 2,297 1
    • 1 $0.85
    • 10 $0.569
    • 100 $0.85
    • 1000 $0.28501
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    DMNH6042SK3-13 Reel 2,500
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    • 10000 $0.25609
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    Avnet Americas DMNH6042SK3-13 Reel 20 Weeks 2,500
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    • 10000 $0.22916
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    Mouser Electronics DMNH6042SK3-13 670
    • 1 $0.83
    • 10 $0.569
    • 100 $0.392
    • 1000 $0.285
    • 10000 $0.27
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    Avnet Silica DMNH6042SK3-13 2,500 22 Weeks 2,500
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    New Advantage Corporation DMNH6042SK3-13 2,500 1
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    • 10000 $0.4236
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    Toshiba America Electronic Components 2SK3132(Q)

    MOSFET N-CH 500V 50A TO3P
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    DigiKey 2SK3132(Q) Tube
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    Diodes Incorporated DMTH47M2SK3-13

    MOSFET BVDSS: 31V~40V TO252 T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMTH47M2SK3-13 Bulk 2,500
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    • 10000 $0.23005
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    Avnet Americas DMTH47M2SK3-13 Reel 20 Weeks 2,500
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    • 10000 $0.21146
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    Mouser Electronics DMTH47M2SK3-13 2,399
    • 1 $0.63
    • 10 $0.555
    • 100 $0.379
    • 1000 $0.277
    • 10000 $0.218
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    Hitachi Ltd 2SK313491STR

    Electronic Component
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    ComSIT USA 2SK313491STR 3,115
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    2SK313 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK313 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK313 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK313 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK313 Unknown FET Data Book Scan PDF
    2SK313 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3130 Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK3130 Toshiba Original PDF
    2SK3130 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3131 Toshiba Original PDF
    2SK3131 Toshiba FETs - Nch 250V Original PDF
    2SK3131 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3131 Toshiba Scan PDF
    2SK3131(Q) Toshiba 2SK3131 - MOSFET N-CH 500V 50A TO-3P(L) Original PDF
    2SK3132 Toshiba FETs - Nch 250V Original PDF
    2SK3132 Toshiba Original PDF
    2SK3132 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3132 Toshiba Scan PDF
    2SK3132(Q) Toshiba 2SK3132 - MOSFET N-CH 500V 50A TO-3P(L) Original PDF
    2SK3133 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3133(L) Hitachi Semiconductor Power switching MOSFET Original PDF

    2SK313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source


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    PDF 2SK3133 ADE-208-720 Hitachi DSA00279

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1, 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


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    PDF 2SK3134 ADE-208-721B Hitachi DSA002749

    2SK3132

    Abstract: No abstract text available
    Text: 2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3132 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.) l High forward transfer admittance : |Yfs| = 33 S (typ.)


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    PDF 2SK3132 2SK3132

    2SK3132

    Abstract: IAR50
    Text: 2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3132 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.)


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    PDF 2SK3132 2SK3132 IAR50

    2SK3136

    Abstract: 2SK3136-E PRSS0004AC-A
    Text: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 Previous: ADE-208-696B Rev.4.00 Sep 20, 2005 Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source


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    PDF 2SK3136 REJ03G1068-0400 ADE-208-696B) PRSS0004AC-A O-220AB) 2SK3136 2SK3136-E PRSS0004AC-A

    2SK3131

    Abstract: No abstract text available
    Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance


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    PDF 2SK3131 2SK3131

    2SK3131

    Abstract: s105ns a1535 AS105 1535s
    Text: 2SK3131 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3131 ○ レギュレータDC−DC コンバータ、モータドライブ用 単位: mm : trr = 105 ns (標準) z 逆回復時間が速い。 z 高速フリーホイリングダイオードを内蔵しています。


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    PDF 2SK3131 2-21F1B 2002/95/EC) 2SK3131 s105ns a1535 AS105 1535s

    25A15

    Abstract: 2SK3132 idp-200a
    Text: 2SK3132 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3132 ○ レギュレータDC−DC コンバータ、モータドライブ用 : RDS (ON) = 0.07Ω (標準) z オン抵抗が低い。 単位: mm z 順方向伝達アドミタンスが高い。 : |Yfs| = 33S (標準)


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    PDF 2SK3132 10VID 2-21F1B VDD400V, 25A15 2SK3132 idp-200a

    2SK3133

    Abstract: Hitachi DSA00276
    Text: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720A (Z) 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source


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    PDF 2SK3133 ADE-208-720A D-85622 Hitachi DSA00276

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696A Z 2nd. Edition Nov. 1998 Features • Low on-resistance RDS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source 2SK3136 Outline TO–220AB


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    PDF 2SK3136 ADE-208-696A 220AB Hitachi DSA001652

    Untitled

    Abstract: No abstract text available
    Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built−in high−speed free−wheeling diode


    Original
    PDF 2SK3131

    2SK3130

    Abstract: K3130
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


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    PDF 2SK3130 2SK3130 K3130

    2SK3131

    Abstract: TRANSISTOR 2sk3131
    Text: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON-resistance


    Original
    PDF 2SK3131 2SK3131 TRANSISTOR 2sk3131

    2SK3130

    Abstract: No abstract text available
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original
    PDF 2SK3130 2SK3130

    Hitachi DSA00281

    Abstract: No abstract text available
    Text: 2SK3135 L , 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK


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    PDF 2SK3135 ADE-208-695B D-85622 Hitachi DSA00281

    2SK3130

    Abstract: No abstract text available
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original
    PDF 2SK3130 2SK3130

    2SK3135

    Abstract: 2SK3135L-E 2SK3135STL-E PRSS0004AE-A
    Text: 2SK3135 L , 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous: ADE-208-695B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source


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    PDF 2SK3135 REJ03G1067-0400 ADE-208-695B) PRSS0004AE-A PRSS0004AE-B 2SK3135L-E 2SK3135STL-E PRSS0004AE-A

    2SK3136

    Abstract: DSA0037509 DSA003750 Hitachi DSA003750
    Text: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B Z 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


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    PDF 2SK3136 ADE-208-696B 220AB 2SK3136 DSA0037509 DSA003750 Hitachi DSA003750

    2SK3132

    Abstract: K313 2SK313
    Text: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS


    OCR Scan
    PDF 2SK3132 2SK3132 K313 2SK313

    Untitled

    Abstract: No abstract text available
    Text: 2SK3135 L ,2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance • = 6 m ii typ. Low drive current • 4 V gate drive device can be driven from 5 V source R DS(on)


    OCR Scan
    PDF 2SK3135 ADE-208-695B

    2SK3131

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS


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    PDF 2SK3131 2SK3131

    Untitled

    Abstract: No abstract text available
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(o„) = 4 m il typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK ADE-208-721B (Z) 3rd. Edition


    OCR Scan
    PDF 2SK3134 ADE-208-721B 2SK3134Ã 40815HITEC

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    SK3132

    Abstract: k313 LM k313 2SK3132
    Text: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON) = 0.07 Ci (Typ.)


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    PDF 2SK3132 SK3132 k313 LM k313 2SK3132