MTP15N05
Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 MTP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high
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TP15N05
MTP15N06
MTP15N05,
-220A
MTP15N05
MTP15N06
P-15N
15N05
5N06
5N05
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STP15
Abstract: No abstract text available
Text: S T P 15 N 0 5 L s t p i 5 N 0 5 LFI S G S -T H O M S O N ¡m e ra « ¿ 57 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP15N 05L S TP15N05LFI dss 50 V 50 V R DS on Id < 0.15 a < 0.15 a 15 A 10 A . TYPICAL RDs(on) = 0.115 Q . AVALANCHE RUGGED TECHNOLOGY
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STP15N
TP15N05LFI
05L/FI
ISQWATT220
STP15
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15N05L
Abstract: 15N05 MTP15N05L TP15N05L ne 06l MTM15N06L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM 15N05L MTM 15N06L M TP15N05L M TP15N06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode Silicon Gate TM OS T h e se Lo g ic Le vel T M O S P o w e r F E T s are d esig ned for high
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15N05L
15N06L
TP15N05L
TP15N06L
O-204AA
21A-04
O-220AB
15N05
MTP15N05L
ne 06l
MTM15N06L
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA TP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high
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MTP15N05EL
RuggedO-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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BUZ10
BUZ11
BUZ11A
BUZ11S2
BUZ15
BUZ171
BUZ20
BUZ21
BUZ23
BUZ31
MTM13N50E
P40N10
24N40
p50n05
8n50e
Power MOSFET Cross Reference Guide
motorola 20n50e
TP50N05E
IRF510 mosfet irf640
33N10E
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mtp25n06
Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
Text: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10
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T0-220AB
21A-02
IRF523
IRF521
MTP12P06*
MTP10N06
IRF533
MTP12N06
IRF531
MTP15N06
mtp25n06
MTP12P05
MTP3055A
MTP14N05A
BUZ11 motorola
BUZ11
MTP5N05
T0-225AA
MTP15N05
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TT220
Abstract: TP15N05L
Text: SGS-THOMSON ^ 7/L TP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on TP15N05L TP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI
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MTP15N05L/FI
MTP15N06L/FI
MTP15N05L
MTP15N05LFI
MTP15N06L
MTP15N06LFI
TT220
500ms
TT220
TP15N05L
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MTP15N05L
Abstract: MTP15N05EL MTP15N06L 221A-06 AN569 MTP15
Text: M O T O R O L A SC XST R S / R F böE » • b 3 b 7 2 5 4 DDTfiTS? fib3 ■ HOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA TP15N05EL Designer's Data Sheet Motorola Preferred Device Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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110Tb
MTP15N05L
MTP15N05EL
MTP15N06L
221A-06
AN569
MTP15
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TP25N06
Abstract: 12P05 WC115
Text: 19-3105; Rev 2; 8/96 y u y jx i y u Switch-Mode Regulator with + 5 V to ± 1 2 V or ± 1 5 V D ua l O u t p u t The MAX742 DC-DC converter is a controller for dual-out put power supplies in the 3W to 60W range. Relying on simple two-terminal inductors rather than transformers, the
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MAX742
AX742
100kHz
200kHz,
TP25N06
12P05
WC115
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