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    Part ECAD Model Manufacturer Description Download Buy
    RJK5031DPD-00#J2 Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3200Mohm Mp-3A/To-252 Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJK5031DPD-00-J2

    MOSFET N-CH 500V 3A MP3A
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    Renesas Electronics Corporation RJK5031DPD-01-J2

    MOSFET N-CH 500V 3A MP3A
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    RJK5031DPD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK5031DPD-00#J2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A MP3A Original PDF

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    RJK5031DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Features • Low on-state resistance RDS on = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK5031DPD R07DS0417EJ0200 PRSS0004ZG-A RJK5031DPD PDF

    RJK5031DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0100 Rev.1.00 May 23, 2011 Features • Low on-state resistance RDS on = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • High speed switching Outline


    Original     		RJK5031DPD R07DS0417EJ0100 PRSS0004ZG-A RJK5031DPD PDF

    RJK5031DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Features • Low on-state resistance RDS on = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK5031DPD R07DS0417EJ0200 PRSS0004ZG-A RJK5031DPD PDF