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RJK5031DPD Abstract: No abstract text available Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0100 Rev.1.00 May 23, 2011 Features • Low on-state resistance RDS on = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • High speed switching Outline	Original	RJK5031DPD R07DS0417EJ0100 PRSS0004ZG-A RJK5031DPD	PDF

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RJK5031DPD

Abstract: No abstract text available
Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0100 Rev.1.00 May 23, 2011 Features • Low on-state resistance RDS on = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • High speed switching Outline

Original

RJK5031DPD R07DS0417EJ0100 PRSS0004ZG-A RJK5031DPD

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