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    RJK5031DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Features • Low on-state resistance RDS on = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK5031DPD R07DS0417EJ0200 PRSS0004ZG-A RJK5031DPD PDF

    RJK5031DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Features • Low on-state resistance RDS on = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK5031DPD R07DS0417EJ0200 PRSS0004ZG-A RJK5031DPD PDF