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    POWER DISSIPATION FET 400W Search Results

    POWER DISSIPATION FET 400W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER DISSIPATION FET 400W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF Amplifier 500w

    Abstract: amplifier 400W 5310 064R D1030UK
    Text: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K


    Original     		D1030UK 175MHz RF Amplifier 500w amplifier 400W 5310 064R D1030UK PDF

    UT85 coaxial

    Abstract: 43 toroid core UT85 coax UT85 COAXIAL CABLE D10-40 108MHz D1040UK siemens plc UT85 50 064R
    Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K


    Original     		D1040UK 108MHz 160mm UT85 coaxial 43 toroid core UT85 coax UT85 COAXIAL CABLE D10-40 108MHz D1040UK siemens plc UT85 50 064R PDF

    d5030

    Abstract: D5030UK 064R
    Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    Original     		D5030UK 175MHz 13GLURQFRUH D5030UK 175MHz d5030 064R PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    Original     		D5030UK 175MHz D5030UK 175MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls G (typ) !  H P (2 pls) A D " # GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D1040UK 108MHz 160mm PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1040UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    Original     		D1040UK 108MHz B62152A1X1 160mm PDF

    RF amplifier output 400W input 10 w

    Abstract: 22pf 32V siemens PLC
    Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K


    Original     		D1040UK 108MHz 2B62152A1X1 160mm RF amplifier output 400W input 10 w 22pf 32V siemens PLC PDF

    D1040UK

    Abstract: 108MHz 064R UT85 power dissipation fet 400W
    Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N O M J K


    Original     		D1040UK 108MHz 160mm D1040UK 108MHz 064R UT85 power dissipation fet 400W PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    Original     		D1030UK 175MHz 120mm UT-085, 3x39pF PDF

    D1030UK

    Abstract: 7808 cv
    Text: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K


    Original     		D1030UK 175MHz 120mm UT-085, 3x39pF D1030UK 7808 cv PDF

    UT-085

    Abstract: D1030UK UT-034-25 064R ut 7808 D1030 7808 cv
    Text: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    Original     		D1030UK 175MHz 120mm UT-085, 3x39pF UT-085 D1030UK UT-034-25 064R ut 7808 D1030 7808 cv PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    Original     		FLL107ME FLL107ME FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		FLU10XM FLU10XM FCSI0598M200 PDF

    Zener Diode 3v 400mW

    Abstract: reverse phase dimmer dimmer CIRCUITS FET Triac based Lamp Dimmer power control triac inductor noise suppression triac dimmer LED schematic circuit diagram of flyback PFC converter for LED INFINEON TVS diode process PWM circuit dimmer audio transformer calculation
    Text: Texas Instruments Application Note 2090 Steve Solanyk November 8, 2011 Introduction Key Features This demonstration board highlights the performance of a LM3448 based Flyback LED driver solution that can be used to power a single LED string consisting of seven to eleven


    Original     		LM3448 AN-2090 Zener Diode 3v 400mW reverse phase dimmer dimmer CIRCUITS FET Triac based Lamp Dimmer power control triac inductor noise suppression triac dimmer LED schematic circuit diagram of flyback PFC converter for LED INFINEON TVS diode process PWM circuit dimmer audio transformer calculation PDF

    GaAs FET HEMT Chips

    Abstract: Fujitsu 511 FLC08
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP FCSI0598M200 GaAs FET HEMT Chips Fujitsu 511 FLC08 PDF

    marking w4s

    Abstract: power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 Q62702-C2481 400w transistor TA-1004 "NPN Transistor"
    Text: BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


    Original     		200mA Q62702-C2481 OT-343 Nov-27-1996 BCR400 marking w4s power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 400w transistor TA-1004 "NPN Transistor" PDF

    circuit for flyback transformer driver

    Abstract: zener diode 6w
    Text: Application Report SNOA554C – October 2011 – Revised May 2013 AN-2090 LM3448 -120VAC, 6W Isolated Flyback LED Driver .


    Original     		SNOA554C AN-2090 LM3448 -120VAC, circuit for flyback transformer driver zener diode 6w PDF

    IC 555

    Abstract: IC555 IC 555 as temperature controller ic 555 timer working IC 555 working 43K10 power dissipation fet 400W
    Text: BCR 400W Active Bias Controller 3 Characteristics 4 • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V 2 Application notes 1 • Stabilizing bias current of NPN transistors and


    Original     		200mA VPS05605 EHA07188 OT-343 EHA07217 EHA07218 Feb-24-1999 EHA07219 EHA07191 IC 555 IC555 IC 555 as temperature controller ic 555 timer working IC 555 working 43K10 power dissipation fet 400W PDF

    FET differential amplifier circuit

    Abstract: fet differential amplifier schematic MSA66 brush MOTOR CONTROL
    Text: PULSE WIDTH MODULATION AMPLIFIER MSA66 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • 10.8V to 80V Supply Voltage (7.5-16V VCC ) • 5A continuous output current • 4-quadrant PWM • Anti Shoot-Through Design


    Original     		MSA66 546-APEX MSA66U FET differential amplifier circuit fet differential amplifier schematic MSA66 brush MOTOR CONTROL PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


    OCR Scan     		200mA Q62702-C2481 OT-343 E35b05 012Gflb3 BCR400 flE35bQ5 012Dflb4 EHA07219 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


    OCR Scan     		200mA Q62702-C2481 BCR400W OT-343 Ufl235b05 BCR400 EHAD7217 3235b05 EHA07219 0235tiGS PDF

    MARKING CODE R7 RF TRANSISTOR

    Abstract: transistor B 764 NPN transistor marking W4s marking transistor RF
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


    OCR Scan     		200mA Q62702-C2481 OT-343 BCR400 MARKING CODE R7 RF TRANSISTOR transistor B 764 NPN transistor marking W4s marking transistor RF PDF

    d3s diode

    Abstract: d3s schottky Ic d3s DIODE D3S 90
    Text: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies


    OCR Scan     		22kHz HUF75345P3 HUF75344P3 HRF3205 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 HUF75329P3 HUF75345S3/S3S d3s diode d3s schottky Ic d3s DIODE D3S 90 PDF

    c2481

    Abstract: transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 BCR400W Q62702-C2481 103 ma siemens gaas fet npn marking tx
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A pplication notes • Stabilizing bias current of NPN transistors and FETs from


    OCR Scan     		200mA BCR400W Q62702-C2481 OT-343 BCR400 235b05 00aTfl05 EHA07219 c2481 transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 103 ma siemens gaas fet npn marking tx PDF