Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLC08 Search Results

    SF Impression Pixel

    FLC08 Price and Stock

    Omega Engineering GA-25FR-FL-C-08-J2

    VAPOR AND GAS ACTUATED THERMOMETERS, PANEL & SURFACE MOUNT - Bulk (Alt: GA-25FR-FL-C-08-J2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GA-25FR-FL-C-08-J2 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    PBC Linear FLC08

    Linear Plain Bearing, Additional running clearance, 1/2" Nominal ID, FLC Series | PBC Linear FLC08
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FLC08 Bulk 7 1
    • 1 $24.92
    • 10 $24.92
    • 100 $24.92
    • 1000 $24.92
    • 10000 $24.92
    		Buy Now

    BQ Cable FLC-08/30-E

    Wire: ribbon; 1.27mm; stranded; Cu; unshielded; PVC; grey; 30.5m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FLC-08/30-E 60 1
    • 1 $21.3
    • 10 $16.4
    • 100 $13.5
    • 1000 $13.5
    • 10000 $13.5
    		Buy Now

    FLC08 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC081WF Unknown FET Data Book Scan PDF
    FLC081XP Unknown FET Data Book Scan PDF
    FLC087XP Fujitsu GaAs FET & HEMT Chip Original PDF
    FLC087XP-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF
    FLC08ME Unknown FET Data Book Scan PDF

    FLC08 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLC087XP

    Abstract: No abstract text available
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP PDF

    GaAs FET HEMT Chips

    Abstract: Fujitsu 511 FLC08
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP FCSI0598M200 GaAs FET HEMT Chips Fujitsu 511 FLC08 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP PDF

    GaAs FET HEMT Chips

    Abstract: GaAs FET chip FLC087XP C-Band Power GaAs FET HEMT Chips
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP GaAs FET HEMT Chips GaAs FET chip C-Band Power GaAs FET HEMT Chips PDF

    FLC087XP

    Abstract: FUJITSU RF 053 GaAs FET HEMT Chips
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP 17serve FCSI0598M200 FUJITSU RF 053 GaAs FET HEMT Chips PDF

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 PDF

    FLC081xp

    Abstract: FLC081
    Text: FLC081XP GaA s F E T and H E M Ï Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >DSS Test Conditions VDS = 5V, Vos = 0V Min. - Limit Typ. Max. 300 450 Unit mA Transconductance 9m Vqs = 5V, IQS = 200mA


    OCR Scan     		FLC081XP 200mA 10pcs. FLC081xp FLC081 PDF

    FLC081XP

    Abstract: No abstract text available
    Text: F LC 081 X P fujÎtsu GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r ia(jç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general


    OCR Scan     		FLC081XP FLC081XP PDF

    FLC081XP

    Abstract: No abstract text available
    Text: FLC081XP Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iacjç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general


    OCR Scan     		FLC081XP FLC081XP PDF

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


    OCR Scan     		FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151 PDF

    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


    OCR Scan     		FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP fsx52 FUJITSU MICROWAVE XP 215 FLK202 FSX51 FLC151 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLC087XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r i ^ d = 31.5%(Typ.) Proven Reliability DESCRIPTION


    OCR Scan     		FLC087XP FLC087XP FCSI0598M200 PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA PDF