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    FLL107ME Search Results

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    FLL107ME Price and Stock

    SUMITOMO ELECTRIC Device Innovations Inc FLL107ME

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL107ME 4
    • 1 $112.248
    • 10 $106.6356
    • 100 $106.6356
    • 1000 $106.6356
    • 10000 $106.6356
    		Buy Now

    FLL107ME Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL107ME Eudyna Devices L-BAND MEDIUM & HIGH POWER GAAS FET Original PDF
    FLL107ME Fujitsu FET, P Channel, ID 0.45 A Original PDF
    FLL107ME Fujitsu L-BAND MEDIUM & HIGH POWER GAAS FET Scan PDF
    FLL107ME-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF

    FLL107ME Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLL107ME

    Abstract: 842 FET ADD20
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    Original     		FLL107ME FLL107ME 842 FET ADD20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    Original     		FLL107ME FLL107ME PDF

    FLL107ME

    Abstract: No abstract text available
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    Original     		FLL107ME FLL107ME FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    Original     		FLL107ME FLL107ME FCSI0598M200 PDF

    048 J50

    Abstract: EUDYNA eudyna fet Eudyna Devices FLL107ME fujitsu gaas fet fujitsu GHz gaas fet eudyna GaAs FET
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    Original     		FLL107ME FLL107ME Temperat4888 048 J50 EUDYNA eudyna fet Eudyna Devices fujitsu gaas fet fujitsu GHz gaas fet eudyna GaAs FET PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF

    FLL107ME

    Abstract: fujitsu gaas fet fujitsu gaas fet L-band
    Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=29.5dBnn Typ. High Gain: G-|C|g=13.5dB (Typ.) High PAE: riadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to


    OCR Scan     		FLL107ME FLL107ME FCSI0598M200 fujitsu gaas fet fujitsu gaas fet L-band PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF