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    D1030 Search Results

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    D1030 Price and Stock

    SMC Diode Solutions SDURD1030CT

    DIODE ARRAY GP 300V DPAK
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    DigiKey SDURD1030CT Cut Tape 2,152 1
    • 1 $0.67
    • 10 $0.449
    • 100 $0.67
    • 1000 $0.22016
    • 10000 $0.22016
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    SDURD1030CT Digi-Reel 2,152 1
    • 1 $0.67
    • 10 $0.449
    • 100 $0.67
    • 1000 $0.22016
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    NXP Semiconductors MC33CD1030AER2

    IC INTERFACE SPECIALIZED 48LQFP
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    DigiKey MC33CD1030AER2 Cut Tape 2,000 1
    • 1 $5.5
    • 10 $4.208
    • 100 $3.5278
    • 1000 $3.17119
    • 10000 $3.17119
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    Avnet Americas MC33CD1030AER2 Reel 6,000 12 Weeks 2,000
    • 1 -
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    • 10000 $2.89344
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    Mouser Electronics MC33CD1030AER2 770
    • 1 $5.5
    • 10 $3.89
    • 100 $3.53
    • 1000 $3.02
    • 10000 $2.84
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    Avnet Silica MC33CD1030AER2 14 Weeks 2,000
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    EBV Elektronik MC33CD1030AER2 4,000 14 Weeks 2,000
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    NIDEC Components SD-1030

    SW ROTARY DIP HEX COMP 0.1A 5V
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    DigiKey SD-1030 Bag 1,541 1
    • 1 $3.53
    • 10 $2.863
    • 100 $2.3123
    • 1000 $1.85315
    • 10000 $1.5875
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    Chip1Stop SD-1030 Bulk 10
    • 1 $3.38
    • 10 $2.74
    • 100 $2.74
    • 1000 $2.74
    • 10000 $2.74
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    Kyocera AVX Components GD1030301ZA6N

    CAP CER
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    DigiKey GD1030301ZA6N Tray 800 400
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    • 1000 $3.50393
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    SMC Diode Solutions STD10300

    10A,300V,DPAK, TRENCH SCHOTTKY
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    DigiKey STD10300 Digi-Reel 713 1
    • 1 $0.66
    • 10 $0.445
    • 100 $0.66
    • 1000 $0.21798
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    STD10300 Cut Tape 713 1
    • 1 $0.66
    • 10 $0.445
    • 100 $0.66
    • 1000 $0.21798
    • 10000 $0.21798
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    D1030 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D-103-08 TE Connectivity Raychem Cable Protection Cables, Wires - Management - Solder Sleeve - SOLDERSLEEVE Original PDF
    D1030N Eupec Diode, Rectifier Diode, 1600V to 2200V Original PDF
    D1030N Eupec Diode Selection Guide Original PDF
    D1030N Eupec Power Rectifier Diode Original PDF
    D1030N Infineon Technologies Rectifier Diodes up to 3000V; Package: BG-D5726K-1; VRRM (max): 2,200.0 - 2,600.0 V; IFSM (max): 14,500.0 A; IFAVM/Tc: 1030/100 (180 ° el sin); Housing: Disc dia 58mm height 26mm / Ceramic ; Features: Rectifier Diodes ; Original PDF
    D1030N18 Eupec DIODE STANDARD RECOVERY RECTIFIER 1800V 1300A Original PDF
    D1030N18T Eupec 1.03kA Iout, 1.8kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D1030N20 Eupec DIODE STANDARD RECOVERY RECTIFIER 2000V 1300A Original PDF
    D1030N20T Eupec 1.03kA Iout, 2.0kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D1030N22 Eupec DIODE STANDARD RECOVERY RECTIFIER 2200V 1300A Original PDF
    D1030N22T Eupec 1.03kA Iout, 2.2kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D1030N22TXPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 2.2KV 1030A Original PDF
    D1030N24 Eupec DIODE STANDARD RECOVERY RECTIFIER 2400V 1300A Original PDF
    D1030N24T Eupec 1.03kA Iout, 2.4kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D1030N24TXPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 2.4KV 1030A Original PDF
    D1030N26 Eupec DIODE STANDARD RECOVERY RECTIFIER 2600V 1300A Original PDF
    D1030N26T Eupec 1.03kA Iout, 2.6kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D1030N26TXPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 2.6KV 1030A Original PDF
    D1030UK Semelab Metal Gate RF Silicon FET Original PDF

    D1030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1030P L S amHop Microelectronics C orp. P reliminary May.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -18A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.


    Original
    PDF U/D1030P O-252 O-251 O-252AA Tube/TO-252 O-252

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    Original
    PDF D1030UK 175MHz 120mm UT-085, 3x39pF

    pulse 01940

    Abstract: 01948 D1030N
    Text: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1030N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften


    Original
    PDF D1030N pulse 01940 01948 D1030N

    D1030UK

    Abstract: 7808 cv
    Text: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K


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    PDF D1030UK 175MHz 120mm UT-085, 3x39pF D1030UK 7808 cv

    UT-085

    Abstract: D1030UK UT-034-25 064R ut 7808 D1030 7808 cv
    Text: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN


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    PDF D1030UK 175MHz 120mm UT-085, 3x39pF UT-085 D1030UK UT-034-25 064R ut 7808 D1030 7808 cv

    RF Amplifier 500w

    Abstract: amplifier 400W 5310 064R D1030UK
    Text: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K


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    PDF D1030UK 175MHz RF Amplifier 500w amplifier 400W 5310 064R D1030UK

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1030P L S amHop Microelectronics C orp. P reliminary May.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -18A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.


    Original
    PDF U/D1030P O-252 O-251 O-252AA O-252

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    M83519

    Abstract: MIL-S-83519 Raychem installation procedure rcps-100-70 SAE-AS83519 raychem RPIP 655-00-D NAS1745 D-103-31 raychem rt-1404 RAYCHEM D-103-00 raychem solder sleeve d-142-51
    Text: Shield Termination SolderSleeve Shield Terminators Product Facts • Transparent insulation sleeve provides encapsulation, inspectability, strain relief, and insulation ■ Prefluxed solder preform provides a controlled soldering process ■ One-piece design offers


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    PDF S02-18-R SO63-3-55-26-90 M83519/2-19 S02-19-R SO63-4-55-26-90 M83519/2-20 S02-20-R SO63-5-55-26-90 SAE-AS83519 MIL-S-83519) M83519 MIL-S-83519 Raychem installation procedure rcps-100-70 SAE-AS83519 raychem RPIP 655-00-D NAS1745 D-103-31 raychem rt-1404 RAYCHEM D-103-00 raychem solder sleeve d-142-51

    Acopian Power Supply Model A24H1200

    Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
    Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5


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    PDF

    32 inch TV samsung lcd Schematic

    Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A


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    PDF 965PM BA41-0071 BA41-00717A BA41-00718A TP18631 TP18634 TP18650 TP18635 TP18636 32 inch TV samsung lcd Schematic U574 27b1 diode AP4435 22B2 DIODE 58c3 SLB9635TT1.2

    Liquid Level

    Abstract: No abstract text available
    Text: Optical Liquid Level Sensors D103 Series * M12 Screw-in Body * Low cost * Compact size * Wide range of commercial and industrial applications. Features: Standard Temperature High Temperature D103 M12 Threaded Probe Housing Digital - High in Air Output Function


    Original
    PDF 12VDC 250mm D103000 D103101 Liquid Level

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original
    PDF

    VRN 400

    Abstract: No abstract text available
    Text: ADC12V170 www.ti.com SNOSAZ1E – MAY 2007 – REVISED APRIL 2009 ADC12V170 12-Bit, 170 MSPS, 1.1 GHz Bandwidth A/D Converter with LVDS Outputs Check for Samples: ADC12V170 FEATURES DESCRIPTION • • • • • • • • The ADC12V170 is a high-performance CMOS


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    PDF ADC12V170 ADC12V170 12-Bit, ADC14V155 48-Pin 12-Bit VRN 400

    2SK2515

    Abstract: MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS on 1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 25 A)


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    PDF 2SK2515 2SK2515 MP-88

    raychem catalog termination kit and splicing kit

    Abstract: Raychem installation procedure rcps-200-20 raychem AD-1377 M7928/1 MS25036 raychem AD-1377 calibration NAS1745 raychem AD-1377 drawings raychem termination kit and splicing kit RBK-ILS-processor
    Text: Terminals and Splices Table of Contents How to Compute Circular Mil Area of Various Wire Shapes . . . . . . . . . . . . . . . . . . . . . . 9003 Terminal Stud Hole Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9004


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    PDF

    D103-002

    Abstract: D-103-00
    Text: High Frequency Power Dividers 30 GHz RLC Electronics’ D-10300 Series of high frequency power dividers are compact microstrip units covering the frequency range of 10 to 30.0 GHz. These units are the same as D-10265 series, except modified to work up higher in


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    PDF D-10300 D-10265 D-10300-1 D-10300-2 D-10300-4 D-10300-8 200mW 50emale MIL-E-5400, D103-002 D-103-00

    2SK2515

    Abstract: MP-88
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 18 GHz Microwave PLL Synthesizer ADF41020 Data Sheet FEATURES GENERAL DESCRIPTION 18 GHz maximum RF input frequency Integrated SiGe prescaler Software compatible with the ADF4106/ADF4107/ADF4108 family of PLLs 2.85 V to 3.15 V PLL power supply Programmable dual-modulus prescaler


    Original
    PDF ADF41020 ADF4106/ADF4107/ADF4108 HBM/1500 ADF41020 08-16-2010-B 20-Lead CP-20-6) ADF41020BCPZ ADF41020BCPZ-RL7 EV-ADF41020EB1Z

    400w audio amplifier

    Abstract: dvb-t transmitters THV500 400w transistor audio amplifier audio amplifier with output of 400w ING01 amplifier 400W analog voltmeter RF Amplifier 500w Audio Power Amplifier 400W circuit
    Text: THV500 500W pep –27dBc min Tetrafet Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull TETRAFET to enhance ruggedness and reliability. • • • • •


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    PDF THV500 27dBc D1030UK 210x96x30 GR00344 400w audio amplifier dvb-t transmitters THV500 400w transistor audio amplifier audio amplifier with output of 400w ING01 amplifier 400W analog voltmeter RF Amplifier 500w Audio Power Amplifier 400W circuit

    D1030

    Abstract: D1030N TD1030
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 1030 N C ø3,5 x 3,5 deep ø34 max. 12 A ø34 Pump out pipe metallic connected to the cathode 56 VW K July 1996 D 1030 N Elektrische Eigenschaften


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    PDF

    WPLSoft user manual

    Abstract: VFD015E43T VFD007E21T VFD007E43T submersible motor winding formula VFD004E21T VFD015E43A manual VFD007E21A delta vfd-e with modbus communication vfd037e43a
    Text: Preface Thank you for choosing DELTA’s high-performance VFD-E Series. The VFD-E Series is manufactured with high-quality components and materials and incorporate the latest microprocessor technology available. This manual is to be used for the installation, parameter setting, troubleshooting, and daily


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    PDF 14/CTL X0XX1111 X0XX0000 X0XX1000 X1XX0000 0XXXX110 0XXXX01X X01X0001 0XXXX111 WPLSoft user manual VFD015E43T VFD007E21T VFD007E43T submersible motor winding formula VFD004E21T VFD015E43A manual VFD007E21A delta vfd-e with modbus communication vfd037e43a

    16 bit counter with latch

    Abstract: No abstract text available
    Text: 18 GHz Microwave PLL Synthesizer ADF41020 Data Sheet FEATURES GENERAL DESCRIPTION 18 GHz maximum RF input frequency Integrated SiGe prescaler Software compatible with the ADF4106/ADF4107/ADF4108 family of PLLs 2.85 V to 3.15 V PLL power supply Programmable dual-modulus prescaler


    Original
    PDF ADF41020 ADF4106/ADF4107/ADF4108 HBM/1500 ADF41020 08-16-2010-B 20-Lead CP-20-6) ADF41020BCPZ ADF41020BCPZ-RL7 EV-ADF41020EB1Z 16 bit counter with latch

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect T ra n s is to r designed PACKAGE DIMENSIONS in millimeter fo r hig h c u rre n t s w itc h in g applications,


    OCR Scan
    PDF 2SK2515 2SK2515