7382
Abstract: CPH5820 D2503 MCH3308 SBS006M
Text: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171
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ENN7382
CPH5820
MCH3308)
SBS006M)
CPH5820]
7382
CPH5820
D2503
MCH3308
SBS006M
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w503
Abstract: D2502 FW503 MCH3306 SBS004 Schottky Barrier 3A ENN7312
Text: Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low
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ENN7312
FW503
FW503
MCH3306
SBS004
FW503]
w503
D2502
Schottky Barrier 3A
ENN7312
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C
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200ns
200ns
IXFN170N10
IXFK170N10
O-264
170N10
ID125
OT-227
E153432
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43N60
Abstract: 40N60 max4340 MOSFET 40A 600V
Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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200ns
200ns
43N60
40N60
40N60
O-264
max4340
MOSFET 40A 600V
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IXFN170N10
Abstract: 170N10 125OC IXFK170N10
Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C
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IXFN170N10
IXFK170N10
200ns
O-264
170N10
ID125
Figure10.
IXFN170N10
170N10
125OC
IXFK170N10
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43N60
Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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43N60
40N60
200ns
O-264
43N60
40n60
IXFN40N60
IXFK40N60
IXFK43N60
IXFN43N60
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C
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IXFN170N10
IXFK170N10
200ns
O-264
170N10
ID125Â
Figure10.
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ixys ixfn 55n50
Abstract: ixys ixfn55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
ixys ixfn55n50
IXFK50N50
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55n50
Abstract: ixys ixfn 55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
IXFK50N50
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Untitled
Abstract: No abstract text available
Text: IXFN44N80 Power MOSFET HiPerFETTM Single MOSFET Die VDSS ID25 RDS on = 800V = 44A ≤ 0.165Ω Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN44N80
OT-227
E153432
44N80
100kHz
125OC
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Tf 227
Abstract: No abstract text available
Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM
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150N15
OT-227
Tf 227
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Untitled
Abstract: No abstract text available
Text: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a IXFN170N10 IXFK170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C
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IXFN170N10
IXFK170N10
200ns
O-264
170N10
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
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250ns
250ns
55N50
50N50
50N50
O-264
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol
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55N50
50N50
250ns
O-264
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Untitled
Abstract: No abstract text available
Text: inixYS AdvancedTechnical Information IXFN 24N100 v* DSS Single MOSFET Die CM ^D25 R DS on = 1000 V A = 0.39 Q II HiPerFET Power MOSFET trr <250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions v DSS vD0B T j = 25°C to 150°C T j = 25°C to 150°C, Rqs = 1MC2
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IXFN24N100
OT-227
E153432
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110N20
Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol
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120N20
200ns
110N20
IXFK110N20
Mosfet P 110A,
diode lt 429
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Untitled
Abstract: No abstract text available
Text: mxYS Advanced Technical Information HiPerFET Power MOSFET IXFN 180N10 DSS I D25 RDS on Single MOSFET Die Tj = 25°C to 150°C Tj = 25°C to 150°C, Rgs = 1M£2 100 100 V V Vos« Continuous Transient ±20 ±30 V V Tc =25°C Terminal (current limit) T 0 = 25° C; pulse width limited by TJM
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IXFN180N10
OT-227
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110N20
Abstract: pf 480 d25
Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)
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200ns
200ns
O-264
110N20
120N20
Cto150
110N20
pf 480 d25
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IXFK110N20
Abstract: 20n20 IXFN120N20 IXFK120N20
Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C
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IXFN120N20
IXFN110N20
IXFK120N20
IXFK110N20
O-264
20N20
20n20
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D2562
Abstract: EE-SS3
Text: HiPerFET Power MOSFET IXFN170N10 IXFK170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C
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IXFN170N10
IXFK170N10
200ns
200ns
O-264
170N10
OT-227
D2562
EE-SS3
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d5565
Abstract: No abstract text available
Text: QIXYS ADVANCEDTECHNICAL INFORMATION HiPerFET Power MOSFET IXFK 44N60 DSS I Single MOSFET Die trr <250 ns Symbol Test Conditions V V™ Tj = 25°C to 150°C T, = 25°C to 150°C 600 600 V V Vos Continuous Transient ¿20 ±30 V V Tc =25°C Tc = 25° C Tc =25°C
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44N60
O-264
d5565
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ixys ixfn 55n50
Abstract: S06 rectifier
Text: Vi • ' HiPerFET Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die Test Conditions IXFK 55 v = 25°C to 150°C = 25°C to 150°C Vo«, T, Tj VGS v 0SM Continuous Transient ^025 ' dm® 1» Tn = 25°C = 25°C Tc = 25°C E*r Tc = 25°C
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55N50
50N50
50N50
O-264
OT-227
ixys ixfn 55n50
S06 rectifier
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J9100
Abstract: J 9100 D 819
Text: □ IXYS HHifl JL æ * X HiPerFET Power MOSFETs IXFR 180N085 ISOPLUS247™ Electrically Isolated Back Surface V DSS = 85 V 180 A ^D25 RDS(on) = 7 mQ ” trr < 250 ns Single MOSFET Die Preliminary data sheet Symbol TestConditions Maximum Ratings V DSS
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180N085
ISOPLUS247â
T0-247AD
J9100
J 9100
D 819
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR180N10 ISOPLUS247™ V,DSS = 100 V ^D25 = 165 A Electrically Isolated Back Surface R DS(on) = 8 mQ t rr < 250 n s Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V DSS v DGR
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IXFR180N10
ISOPLUS247â
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