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    120N20 Search Results

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    120N20 Price and Stock

    Infineon Technologies AG IPP120N20NFDAKSA1

    MOSFET N-CH 200V 84A TO220-3
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    DigiKey IPP120N20NFDAKSA1 Tube 727 1
    • 1 $6.66
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    Avnet Americas IPP120N20NFDAKSA1 Tube 482 16 Weeks 50
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    Mouser Electronics IPP120N20NFDAKSA1 1,877
    • 1 $5.69
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    • 100 $2.81
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    Newark IPP120N20NFDAKSA1 Bulk 1
    • 1 $5.92
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    • 100 $3.12
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    Rochester Electronics IPP120N20NFDAKSA1 25 1
    • 1 $3.11
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    TME IPP120N20NFDAKSA1 34 1
    • 1 $5.86
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    Chip1Stop IPP120N20NFDAKSA1 Tube 5,454
    • 1 $6.47
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    • 100 $3.17
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    EBV Elektronik IPP120N20NFDAKSA1 3,500 17 Weeks 500
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    New Advantage Corporation IPP120N20NFDAKSA1 2,000 1
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    Win Source Electronics IPP120N20NFDAKSA1 12,131
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    • 100 $3.0384
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    Littelfuse Inc IXTP120N20X4

    MOSFET
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    DigiKey IXTP120N20X4 Tube 604 1
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    Newark IXTP120N20X4 Bulk 300
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    Ozdisan Elektronik IXTP120N20X4
    • 1 $9.72774
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    • 100 $8.8434
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    Littelfuse Inc IXFH120N20P

    MOSFET N-CH 200V 120A TO247AD
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    DigiKey IXFH120N20P Tube 302 1
    • 1 $12.23
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    RS IXFH120N20P Bulk 8 Weeks 30
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    Littelfuse Inc IXTQ120N20P

    MOSFET N-CH 200V 120A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ120N20P Tube 265 1
    • 1 $11.8
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    • 100 $7.53367
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    Littelfuse Inc IXTH120N20X4

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH120N20X4 Tube 264 1
    • 1 $6.68
    • 10 $6.68
    • 100 $5.21433
    • 1000 $5.21433
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    Newark IXTH120N20X4 Bulk 300
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    Ozdisan Elektronik IXTH120N20X4
    • 1 $11.49041
    • 10 $11.49041
    • 100 $10.7387
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    Find more 120N20 price and stock on Findchips.com

    120N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    120N20

    Abstract: No abstract text available
    Text: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS


    Original     		PDF 120N20 120N20

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    120N20

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    e15343

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTR 120N20P VDSS = 200 V ID25 = 85 A Ω RDS on ≤ 25 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200


    Original     		PDF 120N20P e15343

    ID104

    Abstract: IXFX
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200


    Original     		PDF 120N20 ID104 247TM ID104 IXFX

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 RDS on = (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 120N20 ISOPLUS247TM 247TM

    120N20

    Abstract: motor IG 2200 19 125OC ID104
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 ID104 247TM 125OC 728B1 120N20 motor IG 2200 19 125OC ID104

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 120N20P O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 ID104 247TM 125OC 728B1

    NS152

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXFN 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 220 ns trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 120N20P NS152

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200


    Original     		PDF 120N20 120N20 ID104 247TM O-264

    120n20

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 ID104 247TM 728B1 123B1 728B1 065B1 120n20 ID104

    120N20

    Abstract: DS965
    Text: IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF 120N20 OT-227 E153432 728B1 120N20 DS965

    120N20P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 120N20P O-247 120N20P

    120N20

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 120N20P

    IXFH120N20P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 120N20P IXFH120N20P

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		PDF 120N20 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 120N20 ISOPLUS247TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		PDF 120N20 OT-227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS


    Original     		PDF 120N20 ISOPLUS247TM 728B1

    120N20P

    Abstract: IXTQ120N20P 120N20
    Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 120N20P O-264 120N20P IXTQ120N20P 120N20

    IXFK110N20

    Abstract: 20n20 IXFN120N20 IXFK120N20
    Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C


    OCR Scan     		PDF IXFN120N20 IXFN110N20 IXFK120N20 IXFK110N20 O-264 20N20 20n20

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 120N20 ISOPLUS247™ Electrically Isolated Back Surface Symbol Test Conditions v T j = 25° C to 150° C ^ = 25°Cto150°C ;R GS=1 Mi2 200 200 V V Continuous T ranslent ±20 £30 V V Tc = 25° C (MOSFET chip capability)


    OCR Scan     		PDF 120N20 ISOPLUS247TM Cto150 247TM