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IXYS Corporation IXFX180N085 MOSFET N-CH 85V 180A PLUS247-3
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DigiKey	IXFX180N085	Tube			30	1 - 10 - 100 $10.384 1000 $10.384 10000 $10.384	Buy Now
Mouser Electronics	IXFX180N085					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFK180N085 MOSFET N-CH 85V 180A TO264AA
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DigiKey	IXFK180N085	Tube			25	1 - 10 - 100 $10.65 1000 $10.65 10000 $10.65	Buy Now
IXYS Corporation IXFR180N085 MOSFET N-CH 85V 180A ISOPLUS247
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DigiKey	IXFR180N085	Tube			30	1 - 10 - 100 $10.92567 1000 $10.92567 10000 $10.92567	Buy Now
Mouser Electronics	IXFR180N085					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTC180N085T MOSFET N-CH 85V 110A ISOPLUS220
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DigiKey	IXTC180N085T	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTA180N085T MOSFET N-CH 85V 180A TO263
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DigiKey	IXTA180N085T	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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180N085 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 180N085 TM ISOPLUS247 Electrically Isolated Back Surface VDSS = 85 V ID25 = 180 A RDS(on) = 7 mW Single MOSFET Die trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	180N085 ISOPLUS247
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFK 180N085 IXFX 180N085 HiPerFETTM Power MOSFETs RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM 85 85 V V Continuous Transient ±20 ±30	Original	PDF	180N085 180N085 247TM O-264
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N085 IXFX 180N085 VDSS ID25 RDS on Single MOSFET Die = 85 V = 180 A = 7 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	180N085 180N085 247TM O-264
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM Electrically Isolated Back Surface VDSS = 85 V ID25 = 180 A RDS(on) = 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	180N085 ISOPLUS247TM 247TM E153432
180N085 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N085 IXFX 180N085 VDSS ID25 RDS on Single MOSFET Die = 85 V = 180 A = 7 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	180N085 247TM O-264 180N085
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM Electrically Isolated Back Surface VDSS = 85 V ID25 = 180 A 7 mW RDS(on) = trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	180N085 ISOPLUS247TM
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
ixta180n085 Abstract: No abstract text available Text: Preliminary Technical Information TrenchMVTM Power MOSFET 180N085T7 VDSS ID25 RDS on = 85 V = 180 A ≤ 5.5 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	PDF	IXTA180N085T7 O-263 180N085T ixta180n085
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
J9100 Abstract: J 9100 D 819 Text: □ IXYS HHifl JL æ * X HiPerFET Power MOSFETs IXFR 180N085 ISOPLUS247™ Electrically Isolated Back Surface V DSS = 85 V 180 A ^D25 RDS(on) = 7 mQ ” trr < 250 ns Single MOSFET Die Preliminary data sheet Symbol TestConditions Maximum Ratings V DSS	OCR Scan	PDF	180N085 ISOPLUS247â T0-247AD J9100 J 9100 D 819
I9100 Abstract: No abstract text available Text: Advanced Technical Information □ IX Y S IXFK 180N085 IXFX 180N085 HiPerFET Power MOSFETs = 'd25 = Vpss R DS on = Single MOSFET Die ?D Symbol TestConditions V v DGR Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS = 1 Mß VGS V GSM ^D25 I* E* E as Maximum Ratings	OCR Scan	PDF	180N085 180N085 PLUS247â O-264AA I9100
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q