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IXYS Corporation IXSN62N60U1 IGBT MOD 600V 90A 250W SOT227B
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IXSN62 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSN62N60U1		IXYS	600V IGBT with diode		Original	PDF

IXSN62 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXSN62N60U1 Abstract: 62N60U1 Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	PDF	62N60U1 OT-227 IXSN62N60U1
sot227b2 Abstract: No abstract text available Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	PDF	62N60U1 OT-227 sot227b2
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSN 62N60U1 VCES IC25 VCE sat Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	PDF	62N60U1 OT-227
IXSN62 Abstract: No abstract text available Text: 4 b û b 2 2 b 0 0 0 1 5 2 b 7êb « I X Y DIXYS IXSN62N60U1 IGBT with Diode IC25 V CES Combi Pack CE sat = 90 A = 600 V = 2.5 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions v’ ces vtcor Tj v QES v OEM 'c2S = 25'C to Maximum Ratings	OCR Scan	PDF	IXSN62N60U1 OT-227 IXSN62
IGBT SSR Abstract: FR 151 diode IXSN62 IXSN62N60U1 Text: i*böb22b D O O l S S b 7flb « I X Y □IXYS IXSN62N60U1 IGBT with Diode IC25 V CES Combi Pack CE sat = 90 A = 600 V = 2.5 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions v’ CES vT COR Tj Maximum Ratings = 25'C to 150'C 600	OCR Scan	PDF	IXSN62N60U1 OT-227 125-C 125-C, IGBT SSR FR 151 diode IXSN62
diode u2 40 Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60 Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style ► N eiV ISOPLUS247™ (R) Case style	OCR Scan	PDF	O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
Untitled Abstract: No abstract text available Text: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2	OCR Scan	PDF	62N60U1 OT-227