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IXSN80N60 Price and Stock

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IXYS Corporation IXSN80N60BD1 IGBT MOD 600V 160A 420W SOT227B
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DigiKey	IXSN80N60BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	IXSN80N60BD1		8			1 $58.5 10 $58.5 100 $58.5 1000 $58.5 10000 $58.5	Buy Now
IXYS Corporation IXSN80N60AU1 IGBT MOD 600V 160A 500W SOT227B
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DigiKey	IXSN80N60AU1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXSN80N60AU1		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXSN80N60A IGBT MOD.SINGLE 80A 600V H.CURRENT SOT227B
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New Advantage Corporation	IXSN80N60A		277		1	1 - 10 - 100 $55.68 1000 $51.97 10000 $51.97	Buy Now

IXSN80N60 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSN80N60A		IXYS	High Current IGBT		Original	PDF
IXSN80N60AU1		IXYS	TRANS IGBT MODULE N-CH 600V 160A 4SOT-227B		Original	PDF
IXSN80N60BD1		IXYS	TRANS IGBT MODULE N-CH 600V 160A 4SOT-227 B		Original	PDF
IXSN80N60BD1		IXYS	600V IGBT with diode		Original	PDF

IXSN80N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: High Current IGBT IXSN80N60A VCES = IC25 = VCE sat = 600 V 160 A 3V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V	Original	PDF	IXSN80N60A OT-227
S8500 Abstract: ixsn80N60A high current igbt ic902 Text: High Current IGBT IXSN80N60A VCES = IC25 = VCE sat = 600 V 160 A 3V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V	Original	PDF	IXSN80N60A OT-227 S8500 ixsn80N60A high current igbt ic902
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	PDF	80N60AU1 OT-227 E153432
80n60 Abstract: IXSN80N60AU1 Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	80N60AU1 OT-227 E153432 80n60 IXSN80N60AU1
T0263 Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247TI(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES	OCR Scan	PDF	T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
diode u2 40 Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60 Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style ► N eiV ISOPLUS247™ (R) Case style	OCR Scan	PDF	O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	PDF	O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
case style Abstract: IXSH35N100A Text: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES	OCR Scan	PDF	O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A