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American Technical Ceramics Corp ATC100A1R8BW150XT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	ATC100A1R8BW150XT		978			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	ATC100A1R8BW150XT		1,121			1 $2.25 10 $2.25 100 $2.25 1000 $0.945 10000 $0.945	Buy Now
	ATC100A1R8BW150XT		640			1 $8.862 10 $8.862 100 $8.862 1000 $4.431 10000 $4.431	Buy Now
American Technical Ceramics Corp ATC100A1R8BW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	ATC100A1R8BW		39			1 - 10 - 100 - 1000 - 10000 -	Get Quote
American Technical Ceramics Corp ATC100A1R8BW150XB CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000018 UF, SURFACE MOUNT, 0606
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A1R8BW150XB		16			1 - 10 - 100 - 1000 - 10000 -	Buy Now
American Technical Ceramics Corp ATC100A1R8BW150X
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A1R8BW150X		7			1 $8.1738 10 $5.9941 100 $5.9941 1000 $5.9941 10000 $5.9941	Buy Now
Kyocera AVX Components 100A1R8BW250XT Silicon RF Capacitors / Thin Film 1.8PF 250V .1PF 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A1R8BW250XT	Reel	1,500		500	1 - 10 - 100 - 1000 $2.16 10000 $2.16	Buy Now

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ATC100A1R8BW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ATC100A101JW Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531 Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology	Original	PDF	NE5531079A NE5531079A HS350-P3 WS260 IR260 PU10752EJ01V0DS ATC100A101JW ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
atc100a2r4b Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b
Untitled Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A
ATC100A101JT Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
R1766 Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766
NE5531079A-T1-A Abstract: ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a	Original	PDF	NE5531079A NE5531079A NE5531079A-T1-A ldmos nec
ATC100A101JW Abstract: NE5531079A GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and	Original	PDF	NE5531079A NE5531079A IR260 WS260 HS350-P3 PU10752EJ01V0DS ATC100A101JW GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW
GRM1882C1H Abstract: ATC100A101 GRM1882C1H100J ATC100A101JW NE5531079A SOFTWARE OF CIRCUIT MAKER Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Panasonic R1766 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766
diode R17 SMA Abstract: C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB Text: 19-2027; Rev 1; 3/04 MAX2291 Evaluation Kit The MAX2291 evaluation kit EV kit simplifies evaluation of the MAX2291 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs	Original	PDF	MAX2291 MAX2291 diode R17 SMA C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB