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ATC100A3R3BW Price and Stock

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American Technical Ceramics Corp ATC100A3R3BW150XT CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000033 UF, SURFACE MOUNT, 0606
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A3R3BW150XT		416			1 $1.875 10 $1.875 100 $1.875 1000 $0.9375 10000 $0.9375	Buy Now
American Technical Ceramics Corp ATC100A3R3BW150XB CAP,CERAMIC,3.3PF,150VDC,.1-PF TOL,.1+PF TOL,90PPM-TC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A3R3BW150XB		28			1 $2.125 10 $1.955 100 $1.7 1000 $1.7 10000 $1.7	Buy Now
American Technical Ceramics Corp ATC100A3R3BW150X CAPACITOR, CERAMIC, 150V, 90PPM/CEL TC, 3.3PF, 0606
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A3R3BW150X		3			1 $6.9663 10 $5.8053 100 $5.8053 1000 $5.8053 10000 $5.8053	Buy Now
Kyocera AVX Components 100A3R3BW150XT Silicon RF Capacitors / Thin Film 150volts 3.3pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A3R3BW150XT	Reel			500	1 - 10 - 100 - 1000 $1.84 10000 $1.74	Buy Now

ATC100A3R3BW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A
ATC100A101JT Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
R1766 Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766
Panasonic R1766 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766
diode R17 SMA Abstract: C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB Text: 19-2027; Rev 1; 3/04 MAX2291 Evaluation Kit The MAX2291 evaluation kit EV kit simplifies evaluation of the MAX2291 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs	Original	PDF	MAX2291 MAX2291 diode R17 SMA C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB