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    2N4915 Search Results

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    2N4915 Price and Stock

    Microchip Technology Inc 2N4915

    TRANS PNP 80V 5A TO3
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    ECS International Inc ECXV-L37C2N-491.520

    XTAL OSC VCXO 491.52MHZ SMD
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    DigiKey ECXV-L37C2N-491.520 10
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    ECS International Inc ECXV-P37C2N-491.520

    XTAL OSC VCXO 491.52MHZ SMD
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    Motorola Mobility LLC 2N4915

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    Bristol Electronics 2N4915 44 1
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    . 2N4915

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    2N4915 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4915 Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Original PDF
    2N4915 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=5 / Hfe=25-100 / fT(Hz)=4M / Pwr(W)=88 Original PDF
    2N4915 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N4915 API Electronics Short form transistor data Short Form PDF
    2N4915 Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTORS Scan PDF
    2N4915 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N4915 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N4915 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N4915 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N4915 General Transistor Power Transistor Selection Guide Scan PDF
    2N4915 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4915 Motorola The European Selection Data Book 1976 Scan PDF
    2N4915 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N4915 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4915 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4915 Unknown Vintage Transistor Datasheets Scan PDF
    2N4915 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4915 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4915 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4915 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N4915 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4915

    Abstract: No abstract text available
    Text: 2N4915 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N4915 O204AA) 31-Jul-02 2N4915

    2N4915

    Abstract: LE17 8302
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N4915 O-204AA) 2N4915 LE17 8302

    diode zener c25

    Abstract: zener DIODE C25 c25 zener diode 2n4915
    Text: ISCFdÈù=Rlù=Rl text/html About News Contact keyword search: Employment Site Home part number search: 2N4915 #23235 RFQ/Sample Package NPN Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating


    Original
    PDF 2N4915 diode zener c25 zener DIODE C25 c25 zener diode 2n4915

    2N4906

    Abstract: 2N4915
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N4915 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.5V(Max.)@ IC= 5A ·DC Current Gain: hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICATIONS ·Designed for general purpose use in power amplifier and


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    PDF 2N4915 2N4906 2N4906 2N4915

    Untitled

    Abstract: No abstract text available
    Text: ^vnl-dontLusto 20 STERN AVE. SPRINGRELO, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2902 (212) 227-6008 FAX (973) 376-8980 2N4915 (SILICON) NPN power transistors for use in power amplifier and switching circuits. Complement to PNP 2N4M8. MAXIMUM RATINGS Symbol


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    PDF 2N4915 2N491S

    Untitled

    Abstract: No abstract text available
    Text: 2N4915 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N4915 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N4915 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N4915 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original
    PDF 2N4915 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N4915 Si NPN Power BJT 1.65 Transistors Bipolar Silicon NPN Power. 1 of 1 Home Part Number: 2N4915 Online Store 2N4915 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 2N4915 com/2n4915 2N4915

    2N4906

    Abstract: 2n4915
    Text: 2N4904 2N4905 2N4906 2N4913 2N4914 2N4915 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed


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    PDF 2N4904 2N4905 2N4906 2N4913 2N4914 2N4915 2N4904, 2n4915

    2N4915

    Abstract: 2N4914 2N4913
    Text: SavantIC Semiconductor Product Specification 2N4913 2N4914 2N4915 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4904/4905/4906 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications.


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    PDF 2N4913 2N4914 2N4915 2N4904/4905/4906 2N4913 2N4914 2N4915

    2N3507 JANTX

    Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
    Text: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C


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    PDF 2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N3507 JANTX 2N5541 2N6235 jedec Package TO-39 2n554 2n523

    TO111

    Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
    Text: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000


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    PDF 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 TO111 2N43 2N4231 TO-111

    2N4913

    Abstract: 2N4915 2N4914 2N4906
    Text: TYPES 2N4913, 2N4914, 2N4915 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS P nj FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4904 THRU 2N4906 • 87.5 W at 2S°C Case Temperature • 5 A Rated Collector Current


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    PDF 2N4913, 2N4914, 2N4915 2N4904 2N4906 2N4913 2N4914 2N4906

    2N4906

    Abstract: 2N4904 2N4905
    Text: TYPES 2N4904, 2N4905, 2N4906 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS F O R P O W ER -A M P LIFIER AND H IGH -SPEED -SW ITCH IN G A P P LIC A T IO N S D ES IG N ED F O R C O M P LE M EN T A R Y U SE W ITH 2N4913, 2N4914, 2N4915 Z Ä z • 87.5 W at 25°C Case Temperature


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    PDF 2N4904, 2N4905, 2N4906 2N4913, 2N4914, 2N4915 P0SSI81E. 2N4904 2N4905

    2N4913

    Abstract: No abstract text available
    Text: 13 4 é 9 3 ¿‘EHI Cu A SEMICOA GENERAL DESCRIPTION ARB NPN SILICON TRIPLE OÖ1 0 Ï 2N4913 * 2N4914 2N4915 2N4914, A N D 2N4915 DIFFUSED POWER TRANSISTORS MEDIUM SPEED SWITCHING, DRIVER AMPLIFICATION APPLICATIONS T - DE | f l l B 4 b c]3 0 0 0 D D 1 0 b "|~f


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    PDF 2N4913, 2N4914, 2N4915 2N4913 2N4914 2N4913

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


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    PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


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    PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867

    Untitled

    Abstract: No abstract text available
    Text: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1


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    PDF 2N3751 2N3752 2N3850 2N3851 2N3852 O-111 O-114

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


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    PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    transistor 40411

    Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
    Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30


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    PDF TC-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447

    2N3713

    Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
    Text: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914


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    PDF 2N5067 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 2N3791 2N4399 2N4903 2N3713 2n3055 complement 2N5068 2N3055 2N3714 2N3790