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    2N43 Search Results

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    2N43 Price and Stock

    TDK Electronics B82562N4333M000

    FIXED IND 33UH 1.6A 100 MOHM SMD
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    DigiKey B82562N4333M000 Digi-Reel 8,000 1
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    B82562N4333M000 Cut Tape 8,000 1
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    B82562N4333M000 Reel 8,000 1,000
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    Newark B82562N4333M000 Reel 4,000
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    TDK Electronics B82562N4334M000

    FIXED IND 330UH 490MA 920MOHM SM
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    DigiKey B82562N4334M000 Digi-Reel 7,900 1
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    B82562N4334M000 Cut Tape 7,900 1
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    B82562N4334M000 Reel 7,000 1,000
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    TDK Electronics B82562N4332N000

    FIXED IND 3.3UH 3.7A 19 MOHM SMD
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    DigiKey B82562N4332N000 Digi-Reel 4,526 1
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    B82562N4332N000 Reel 3,983 1,000
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    Susumu Co Ltd RG2012N-433-W-T1

    RES SMD 43K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-433-W-T1 Cut Tape 1,000 1
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    RG2012N-433-W-T1 Reel 1,000 1,000
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    RG2012N-433-W-T1 Digi-Reel 1,000 1
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    Susumu Co Ltd RG2012N-432-W-T1

    RES SMD 4.3K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-432-W-T1 Cut Tape 925 1
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    RG2012N-432-W-T1 Digi-Reel 925 1
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    New Advantage Corporation RG2012N-432-W-T1 2,000 1
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    2N43 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N43 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N43 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N43 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N43 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N43 Unknown Vintage Transistor Datasheets Scan PDF
    2N43 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N43 Unknown GE Transistor Specifications Scan PDF
    2N43 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N43 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N430 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4300 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=2 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=15 Original PDF
    2N4300 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=2 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=15 Original PDF
    2N4300 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N4300 API Electronics Short form transistor data Short Form PDF
    2N4300 Central Semiconductor NPN METAL CAN Transistors Scan PDF
    2N4300 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan PDF
    2N4300 General Diode Transistor Selection Guide Scan PDF
    2N4300 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N4300 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2N43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3442

    Abstract: 2N4347 transistor 2n3442 2n3442 datasheet ic20
    Text: 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage –


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    PDF 2N3442 2N4347 2N3442 2N4347 transistor 2n3442 2n3442 datasheet ic20

    2N4395

    Abstract: No abstract text available
    Text: 2N4395 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4395 O204AA) 31-Jul-02 2N4395

    2N4397

    Abstract: No abstract text available
    Text: 2N4397 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4397 O204AA) 10/2m 31-Jul-02 2N4397

    2N4358

    Abstract: No abstract text available
    Text: 2N4358 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 240V 0.41 (0.016)


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    PDF 2N4358 O205AD) 10/1m 1-Aug-02 2N4358

    rca 101m

    Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50


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    PDF 2SC458K 2N3856A BC383L MPS3707 BC223A BC232A BC223 rca 101m Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2N4338

    Abstract: 2N4340 equivalent
    Text: ITSiicanix Jm B in c o r p o r a te d The 2N4338 Series of n-channel JFETs is designed for sensitive amplifier stages at low to mid frequencies. It features low cut-off voltages to accommodate low-level power supplies and low leakage for improved system accuracy. The 2N4338 and 2N4339 are ideal for low


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    PDF 2N4338 2N4339 2N4340 2N4341 2N4340 equivalent

    Untitled

    Abstract: No abstract text available
    Text: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP


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    PDF O-226AA) OT-23 SST201, SST202 2N4338, 2N4339, 2N4340, 2N4341,

    SST4393

    Abstract: SILICONIX 2N4391
    Text: SST4391 SERIES N-Channel JFETs C f S ilic o n ix in c o rp o ra te d The SST4391 Series is the surface mount equivalent of our popular 2N4391 device types. Its low cost and low rDS on rnake it a good choice for an all-purpose analog switch, while its high g^ and good high-frequency


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    PDF SST4391 2N4391 SST4392 SST4393 OT-23 12mA-12V SST4393 SILICONIX 2N4391

    pn4393

    Abstract: PN4391 equivalent PN4392 equivalent
    Text: PN4391 SERIES N-Channel JFETs The PN4391 Series is the plastic equivalent of our popular 2N4391 Series. These devices are especially well suited for analog switching applications but function efficiently as high-gain amplifiers, particularly at high-frequency. Our low-cost TO-92 packaging


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    PDF PN4391 2N4391 PN4392 PN4393 O-226AA) VIEW16 pn4393 PN4391 equivalent PN4392 equivalent

    PW 2N

    Abstract: SST4393 Q3060 marking 2n sot23 2N4392 4392 ic equivalent PW 2N 150 SST4391
    Text: Tem ic 2N/PN/SST4391 Series S e m i c o n d u c l o r s N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 SST4391 PN4392 SST4392 PN4393 SST4393 Product Summary Part Number VGS off (V) r DS(on) Max (Q) iD(off) Typ (pA) to N T V p (n s) 2N/PN/SST4391 - 4 to -10 30


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    PDF 2N/PN/SST4391 2N4391 2N4392 2N4393 2N/PN/SST4392 2N/PN/SST4393 PN4391 SST4391 PN4392 PW 2N SST4393 Q3060 marking 2n sot23 4392 ic equivalent PW 2N 150

    fet junction n-channel transistor

    Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
    Text: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1


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    PDF 711Dfi2b 2N4340 711Dfl2b fet junction n-channel transistor small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340

    2N3644

    Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max


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    PDF O-105 2N4356 2N3645 CIL296 CIL297 OL298 2N3638 2N3638A CIL591 C1L592 2N3644 2N4354 2N4355 CIL295

    2N5458 NATIONAL SEMICONDUCTOR

    Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
    Text: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A


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    PDF b501130 003THTfl 2N3684 2N3686 2N3822 PN4303 2N4338 T0-18 2N4339 2N5458 NATIONAL SEMICONDUCTOR to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET

    Diode LT 5228

    Abstract: Diode LT 5230 transistor LT 5230 2N5386 L81400 0/Diode LT 5228
    Text: TYPE 2N5386 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR n FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4301 Z w O • 50 W at 100°C Case Temperature OB * • M ax V ce sat of 0 .6 V at 6 A l c • Typ t,„ of 230 ns at 6 A l c


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    PDF 2N5386 2N4301 Diode LT 5228 Diode LT 5230 transistor LT 5230 L81400 0/Diode LT 5228

    2N4391

    Abstract: No abstract text available
    Text: B 13 9 -9 7 2N4391, 2N4392, 2N4393 N - C H A N N E L SILICO N JU N C T IO N FIELD-EFFECT TR AN SISTO R • • • LOW ON RESISTANCE ANALOG SWITCHES Absolute maximum ratings at TA =2 5 X CHOPPERS Reverse Gate Source & Reverse Gate DrainVoHage COMMUTATORS Continuous Forward Gate Current


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    PDF 2N4391, 2N4392, 2N4393 2N4391 2N4392 2N4391 2N4392

    TO111

    Abstract: TO61 U 114
    Text: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8


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    PDF O-111 O-111 TO111 TO61 U 114

    TO-209AC

    Abstract: 2N1805 2N1806 2N1807 2N4361 2N4362 2N4363 2N4364 2N4365 2N4366
    Text: Silicon Controlled Rectifiers 2N4361 - 2N4367 & 2N1805 - 2N1807 Dim A B C D E F G H J K M N P Inches M illim e te r Minimum Maximum Minimum 1.050 1.060 1.161 6.144 7.375 .827 .286 .948 .499 .280 .600 .150 .295 - 5.850 6.850 .797 .276 - .425 .260 .500


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    PDF 2N4361 2N4367 2N1805 2N1807 O-209AC 2N4362 2N4363 2N4364 TO-209AC 2N1806 2N1807 2N4365 2N4366

    2n4351

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage


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    PDF 2N4351 100mA 300ms. 2n4351

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC bbE D • DS0433Ô 000b5E3 S31 ■ AL6R JUNCTION FIELD-EFFECT TRANSISTORS • ELECTRICAL CHARACTERISTICS at TA= + 25°C A V 1 G S o ff V Y (B R )G S S Allegro Min. @ IG Max. @ V GS Min. Max. Type Type Polarity (V) (HA) (nA) 2N4391


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    PDF DS0433Ã 000b5E3 2N4391 THJ4391 2N4392 THJ4392 2N4393 THJ4393 2N4416A THJ4416A

    2N404

    Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
    Text: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240


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    PDF 2N43A' 2N525. 2N44A 2N524. 2N188A 34-6S 2N508, 2N1175 2N1413 2N241A 2N404 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


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    PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    2N5815

    Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
    Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50


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    PDF 2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


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    PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050