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    Microchip Technology Inc 2N5337

    NPN TRANSISTOR
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    Motorola Mobility LLC 2N5337

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    Fairchild Semiconductor Corporation 2N5337

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    Motorola Semiconductor Products 2N5337

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    2N5337 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5337 Central Semiconductor Small Signal Transistors Original PDF
    2N5337 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=6 Original PDF
    2N5337 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5337 API Electronics Short form transistor data Short Form PDF
    2N5337 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5337 API Electronics Short form transistor data Short Form PDF
    2N5337 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N5337 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N5337 Diode Transistor Transistor Short Form Data Scan PDF
    2N5337 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5337 General Semiconductor Low Frequency Transistors Scan PDF
    2N5337 General Transistor Power Transistor Selection Guide Scan PDF
    2N5337 Motorola European Master Selection Guide 1986 Scan PDF
    2N5337 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5337 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5337 Unknown Silicon NPN Transistor Scan PDF
    2N5337 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5337 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5337 Unknown Vintage Transistor Datasheets Scan PDF
    2N5337 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N5337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5337

    Abstract: No abstract text available
    Text: 2N5337 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N5337 O205AD) 1-Aug-02 2N5337

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 2N5337 2N5338 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high


    Original
    PDF 2N5336 2N5337 2N5338 2N5339 2N5336

    2N5337X

    Abstract: No abstract text available
    Text: 2N5337X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original
    PDF 2N5337X O205AD) 1-Aug-02 2N5337X

    Untitled

    Abstract: No abstract text available
    Text: 2N5337A-220M MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE 4.6 1 0.6 3.6 Dia. FEATURES 1 0 .6 1 3 .5 16.5 0.8 • HERMETIC METAL PACKAGES 1 23 • HIGH RELIABILITY 1 3 .7 0 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS


    Original
    PDF 2N5337A-220M

    Untitled

    Abstract: No abstract text available
    Text: 2N5337X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original
    PDF 2N5337X O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5337 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N5337 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5337X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original
    PDF 2N5337X O205AD) 17-Jul-02

    2N3507 JANTX

    Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
    Text: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C


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    PDF 2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N3507 JANTX 2N5541 2N6235 jedec Package TO-39 2n554 2n523

    2SC3303 to-251

    Abstract: 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634
    Text: POWER SILICON NPN Item Part Number Number I C 5 -10 15 -20 25 30 35 40 45 -50 ~ BUR10 BUR10 BUR10 SVTSO-5 SVTSO-5 SVTBO-5 2N2SS0 2N4113 2N4115 2N4306 2N4309 2SC520 2N1725 2N3S50 SOT5636 SOT63S3 2N2S93 2N5326 "~""";JIOI'\L. 55 - -60 2SC3367 2S0961 2N5337


    Original
    PDF O-l11 O-220AB O-220 O-220var O-251 2SC3303 to-251 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634

    1455

    Abstract: 2N5337A-220M
    Text: 2N5337A-220M MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE 4.6 1 0.6 3.6 Dia. FEATURES 1 0 .6 1 3 .5 16.5 0.8 • HERMETIC METAL PACKAGES 1 23 • HIGH RELIABILITY 1 3 .7 0 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS


    Original
    PDF 2N5337A-220M 1455 2N5337A-220M

    Untitled

    Abstract: No abstract text available
    Text: ^£,mi'C,ona\j.cioi LPioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5337 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 80V Absolute Maximum Ratings


    Original
    PDF 2N5337 300us

    Untitled

    Abstract: No abstract text available
    Text: 2N5337 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N5337 O205AD) 19-Jun-02

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original
    PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original
    PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    2N5339

    Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53
    Text: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —


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    PDF 2N5336 2N5337 2N5338 2N5339* 2N6190 2N6193 2N533Â 2N5339 2N533 2n5337 jantx 2n5339 jantx 2N6336 2n53

    Untitled

    Abstract: No abstract text available
    Text: 7^ 2 ^ 5 3 ? 002=1335 7 • £ jl 1 ^ 3 2 -O S 2N5336/5337 2N5338/5339 SCS-THOMSON i&JCTHMOtgS S G S-TH0MS0N 3ÜE » HIGH CURRENT FAST SWITCHING APPLICATION DESCRIPTION The 2N5336, 2N5337, 2N5338 and 2N5339 are silicon epitaxial planar NPN transistors in Jedec


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    PDF 2N5336/5337 2N5338/5339 2N5336, 2N5337, 2N5338 2N5339 2N5336/37/38/3 25/uF 10/LIS

    BU606

    Abstract: bu606d 2N5415
    Text: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338


    OCR Scan
    PDF BFX34 BSS44 BSW67 BSW68 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 BU606 bu606d 2N5415

    Untitled

    Abstract: No abstract text available
    Text: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152


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    PDF 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339


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    PDF O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420

    2N5339

    Abstract: 2N5337 2N5336 2N5338 1B05A
    Text: 2N5336 2N5337 2N5338 2N5339 ♦I : * ' «trai sem iconductor CorpCentral Sem iconductor Corp. NPN SILICON TRANSISTOR 1 4 5 Adam s Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-39 CASE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824


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    PDF 2N5336 2N5337 2N5338 2N5339 2N5338 2N5339 500mA 1B05A

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


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    PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


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    PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    2N5415

    Abstract: No abstract text available
    Text: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421


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    PDF 00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415