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    2N3868 Search Results

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    2N3868 Price and Stock

    MACOM JANTXV2N3868

    TRANS TO39
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    Microchip Technology Inc 2N3868

    TRANS PNP 60V 0.003A TO5
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    Microchip Technology Inc 2N3868S

    TRANS PNP 60V 0.003A TO39
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    Microchip Technology Inc 2N3868U4

    TRANS PNP 60V 0.003A U4
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    Microchip Technology Inc JAN2N3868

    TRANS PNP 60V 0.003A TO5
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    2N3868 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3868 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3868 Microsemi Silicon PNP Power Transistors - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3868 Microsemi PNP Switching Silicon Transistor Original PDF
    2N3868 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3868 SunLED USA silicon transistors UHF/VHF power transistors Original PDF
    2N3868 API Electronics Short form transistor data Short Form PDF
    2N3868 API Electronics 5 Amps PNP Transistors Scan PDF
    2N3868 API Electronics 5 AMPS PNP Transistors Scan PDF
    2N3868 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N3868 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3868 Diode Transistor Transistor Short Form Data Scan PDF
    2N3868 General Diode Transistor Selection Guide Scan PDF
    2N3868 General Transistor Power Transistor Selection Guide Scan PDF
    2N3868 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3868 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3868 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3868 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3868 Unknown Vintage Transistor Datasheets Scan PDF
    2N3868 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3868 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N3868 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3868

    Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
    Text: TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/350 PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original
    PDF 2N3867 2N3867S 2N3868 2N3868S MIL-PRF-19500/350 2N3867 2N3867S 2N3868 2N3868S 2N3867, JTX 2N3867 2N3868S JAN

    Untitled

    Abstract: No abstract text available
    Text: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS


    Original
    PDF 2N3719. 2N3720 2N3867. 2N3868 2N6303 3N17II

    2N3868SMD05

    Abstract: No abstract text available
    Text: 2N3868SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar PNP Device in a Hermetically sealed Ceramic Surface Mount


    Original
    PDF 2N3868SMD05 O276AA) 15-Aug-02 2N3868SMD05

    Untitled

    Abstract: No abstract text available
    Text: 2N3868 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3868 O205AD) 19-Jun-02

    2N3868

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS


    Original
    PDF 2N3868 C-120 2N3868Rev031105E 2N3868

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS


    Original
    PDF 2N3868 C-120 2N3868Rev031105E

    2N3868

    Abstract: No abstract text available
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3868 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min)


    Original
    PDF 2N3868 MSC1060 2N3868

    2N3868

    Abstract: 2n3867 2N3868S 2N3868S JANTXV 2N3867S 2N3868SJAN
    Text: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/350 Devices Qualified Level 2N3867 2N3867S JAN JANTX JANTXV 2N3868 2N3868S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous


    Original
    PDF MIL-PRF-19500/350 2N3867 2N3867S 2N3868 2N3868S 2N3867, 2N3868 2n3867 2N3868S 2N3868S JANTXV 2N3867S 2N3868SJAN

    Untitled

    Abstract: No abstract text available
    Text: 2N3868+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


    Original
    PDF 2N3868 Freq60M time60n

    2N3868

    Abstract: No abstract text available
    Text: 2N3868 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3868 O205AD) 1-Aug-02 2N3868

    2N3868SMD

    Abstract: No abstract text available
    Text: 2N3868SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed


    Original
    PDF 2N3868SMD O276AB) 15-Aug-02 2N3868SMD

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINQRELD. NEW JERSEY 07081 USA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 2N3868 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • . • • Collector-Emitter Sustaining Voltage: VCEO(SUS) = - 60 Vdc (Min)


    Original
    PDF 2N3868

    Untitled

    Abstract: No abstract text available
    Text: 2N3868 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


    Original
    PDF 2N3868 Freq60M time60n

    Untitled

    Abstract: No abstract text available
    Text: 2N3868+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


    Original
    PDF 2N3868 Freq60M time60n

    2N5415

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >[email protected]/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) [email protected]/.25


    OCR Scan
    PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415

    741 IC

    Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >[email protected]/3 [email protected]/.25 6 60 2N3868 60 3 >[email protected]/3 [email protected]/.25 6 60 2N4930 200 .05 [email protected]/10 [email protected]/.001 5 10* 2N4931 250 .05


    OCR Scan
    PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415

    2N4927

    Abstract: 2N5415
    Text: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib


    OCR Scan
    PDF 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 2N1483 2N1484 2N1495 2N1486 2N4927 2N5415

    Transistor 2N5093

    Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >[email protected]/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)


    OCR Scan
    PDF O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 Transistor 2N5093 7 amps pnp transistor 2N5416A "PNP Transistor"

    BU606

    Abstract: bu606d 2N5415
    Text: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338


    OCR Scan
    PDF BFX34 BSS44 BSW67 BSW68 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 BU606 bu606d 2N5415

    2N3183

    Abstract: 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203
    Text: COLLECTOR CURRENT = 5 AMPS PNP TYPES— Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N3178 2N3183 2N3184 2N3185 2N318« 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719 2N3720 2N3867 2N3868 2N4999


    OCR Scan
    PDF 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N3178 2N3183 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203

    2N5286

    Abstract: 2N540S 2N5867 2N5872 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905
    Text: \ P I ELECTRONICS INC Eb DE | DÜMBSTS □□□□2Eb 7 |^T-3 3-Ot COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333


    OCR Scan
    PDF 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N5286 2N540S 2N5867 2N5872

    Untitled

    Abstract: No abstract text available
    Text: P I ELECTRONICS INC Eb d F | □□MBS'iS OOOOSEb 7 |^*T-3 3-01 COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333


    OCR Scan
    PDF 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909

    2N3866

    Abstract: CFO20 teledyne 2n3867 2N3868 teledyne fet
    Text: TELEDYNE C011P0NENTS ù ì l T t i Q S GGQbS37 S 2ÖE D r-3 -i-i-i I PNP 3 AMP 2N3867 2N3868 2N6303 POWER TRANSISTORS GEOMETRY 505 • HIGH SPEED • VCEO sus to 80V • HIGH fT MAXIMUM RATINGS PARAMETER SYMBOL 2N3867 2N3868 2NÓ303 UNIT Collector Emitter Voltage


    OCR Scan
    PDF C011P0NENTS GGQbS37 2N3867 2N3868 2N6303 003-----J Cfo200 2N3866 CFO20 teledyne 2n3867 teledyne fet

    2N6303

    Abstract: 2N3868 2N3867 TWFC LC-25 FR90
    Text: EIE D P P C PRODUCTS CORP • bfiSbni 0000003 □ Ï- 2N3867 2N3868 2N6303 ^ = f fic w T w iP v Power Transistors i'T^'vvv'Tj- APPLICATIONS FEATURES • High-Speed Switching • Collector-Emitter Sustaining Voltage: VCEO sus =4 0 Vdc (Min) — 2N3867 = 60 Vdc (Min) — 2N3868


    OCR Scan
    PDF 2N3867 2N3868 2N6303 2N3867 2N3868 2N3868, 300/iS, 2N6303 TWFC LC-25 FR90