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    2N6303 Search Results

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    2N6303 Price and Stock

    Microchip Technology Inc 2N6303

    POWER BJT
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    DigiKey 2N6303 Bulk 100
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    Mouser Electronics 2N6303
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    Future Electronics 2N6303 100
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    • 100 $152.06
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    Microchip Technology Inc 2N6303 36 Weeks
    • 1 $153.28
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    Onlinecomponents.com 2N6303
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    Avnet Americas 2N6303 Bulk 36 Weeks 100
    • 1 $150.2144
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    • 100 $135.29099
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    Master Electronics 2N6303
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    • 100 $138.76
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    Cal-Chip Electronics CHV1812N630333KXT

    HVCAP1812 X7R .033UF 10% 630V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV1812N630333KXT Reel 1,000
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    GTCAP 2N6303

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,3A I(C),TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6303 1,002
    • 1 $41.24
    • 10 $41.24
    • 100 $41.24
    • 1000 $30.93
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    SSI 2N6303

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,3A I(C),TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6303 156
    • 1 $41.24
    • 10 $41.24
    • 100 $32.992
    • 1000 $31.961
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    Central Semiconductor Corp 2N6303

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,3A I(C),TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6303 3
    • 1 $18.759
    • 10 $18.759
    • 100 $18.759
    • 1000 $18.759
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    2N6303 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6303 Microsemi Silicon PNP Power Transistor Original PDF
    2N6303 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=120 / Ic=0.5 / Hfe=40-150 / fT(Hz)=30M / Pwr(W)=1 Original PDF
    2N6303 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N6303 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6303 Unknown Transistor Replacements Scan PDF
    2N6303 Unknown Transistor Replacements Scan PDF
    2N6303 Unknown Transistor Replacements Scan PDF
    2N6303 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6303 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6303 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6303 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6303 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6303 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6303 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6303 PPC Products Silicon PNP Power Transistor Scan PDF
    2N6303 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF

    2N6303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6303

    Abstract: No abstract text available
    Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original
    PDF 2N6303 O205AD) 1-Aug-02 2N6303

    Untitled

    Abstract: No abstract text available
    Text: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS


    Original
    PDF 2N3719. 2N3720 2N3867. 2N3868 2N6303 3N17II

    2N6303

    Abstract: No abstract text available
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)


    Original
    PDF 2N6303 MSC1062 2N6303

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6303 APPLICATIONS: . • . High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: . . . • Collector-Emitter Sustaining Voltage: VCEO(SUS) = - 80 Vdc (Min)


    Original
    PDF 2N6303 300tis,

    Untitled

    Abstract: No abstract text available
    Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original
    PDF 2N6303 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)


    Original
    PDF 2N6303 MSC1062

    Untitled

    Abstract: No abstract text available
    Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original
    PDF 2N6303 O205AD) 17-Jul-02

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original
    PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    MJE13005A

    Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
    Text: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175


    Original
    PDF MJ13330 O-204AA/TO-3: MJ13101 MJ13331 MJ13333 MJE13005A MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252

    2N6307 Motorola

    Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
    Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


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    PDF k3k72S4 2N6303 2N6306 2N6307, 2N6308 2N6306 2N6307 2N6308 2N6306, 2N6307 Motorola 2N6303 2n6308 motorola

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


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    PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285

    2N3866

    Abstract: CFO20 teledyne 2n3867 2N3868 teledyne fet
    Text: TELEDYNE C011P0NENTS ù ì l T t i Q S GGQbS37 S 2ÖE D r-3 -i-i-i I PNP 3 AMP 2N3867 2N3868 2N6303 POWER TRANSISTORS GEOMETRY 505 • HIGH SPEED • VCEO sus to 80V • HIGH fT MAXIMUM RATINGS PARAMETER SYMBOL 2N3867 2N3868 2NÓ303 UNIT Collector Emitter Voltage


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    PDF C011P0NENTS GGQbS37 2N3867 2N3868 2N6303 003-----J Cfo200 2N3866 CFO20 teledyne 2n3867 teledyne fet

    2N6303

    Abstract: 2N3868 2N3867 TWFC LC-25 FR90
    Text: EIE D P P C PRODUCTS CORP • bfiSbni 0000003 □ Ï- 2N3867 2N3868 2N6303 ^ = f fic w T w iP v Power Transistors i'T^'vvv'Tj- APPLICATIONS FEATURES • High-Speed Switching • Collector-Emitter Sustaining Voltage: VCEO sus =4 0 Vdc (Min) — 2N3867 = 60 Vdc (Min) — 2N3868


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    PDF 2N3867 2N3868 2N6303 2N3867 2N3868 2N3868, 300/iS, 2N6303 TWFC LC-25 FR90

    2N3720

    Abstract: 2n3867
    Text: MOTOROLA SC XSTRS/R 12E D | F b 3 fc,7 2 S 4 Q 0 ÛMM 7 7 5 | 2N3719, 2N3720 2N3867, 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and highfrequency amplifier applications.


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    PDF 2N3719, 2N3720 2N3867, 2N3868 2N6303 2N3719 2N3867 2N3720 2n3867

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


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    PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    2N5415

    Abstract: No abstract text available
    Text: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421


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    PDF 00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    SILICON TRANSISTOR CORP

    Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
    Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 SILICON TRANSISTOR CORP 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


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    PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp

    semelab 2N6287

    Abstract: 2N6378E
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


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    PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E

    2n6190

    Abstract: No abstract text available
    Text: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S VOLTS T0-205 1*0-5 111I PEAK *C AMPS min/max hFE LU bvceo O > > DEVICE TYPE _o < PACKAGE VCE (sat) max VOLTS !C @ *B A A 2N3439* 350 1.0 40-160 .02/ 10.0 0.5 .05 /. 004 2N3440* 250 1.0 40-160 .02/ 10.0


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    PDF T0-205 2N3439* 2N3440* 2N3506* 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2n6190

    BU606

    Abstract: bu606d 2N5415
    Text: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338


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    PDF BFX34 BSS44 BSW67 BSW68 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 BU606 bu606d 2N5415

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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