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Micro Commercial Components MSJPFR20N60-BP N-CHANNEL MOSFET,TO-220AB(H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPFR20N60-BP	Tube	2,000		1	1 $3.32 10 $2.16 100 $3.32 1000 $1.12946 10000 $1.05	Buy Now
Mouser Electronics	MSJPFR20N60-BP		1,988			1 $2.5 10 $2.08 100 $1.66 1000 $1.21 10000 $1.02	Buy Now
Micro Commercial Components MSJPFFR20N60-BP N-CHANNEL MOSFET,TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPFFR20N60-BP	Tube	1,996		1	1 $3.32 10 $2.16 100 $3.32 1000 $1.12946 10000 $1.05	Buy Now
Mouser Electronics	MSJPFFR20N60-BP		2,000			1 $2.5 10 $2.08 100 $1.66 1000 $1.21 10000 $1.02	Buy Now
IXYS Corporation IXGX320N60B3 IGBT PT 600V 500A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGX320N60B3	Tube	300		1	1 $31.95 10 $31.95 100 $23.389 1000 $23.389 10000 $23.389	Buy Now
Mouser Electronics	IXGX320N60B3		286			1 $31.95 10 $28.33 100 $23.38 1000 $23.38 10000 $23.38	Buy Now
TTI	IXGX320N60B3	Tube			300	1 - 10 - 100 - 1000 $23.39 10000 $23.39	Buy Now
TME	IXGX320N60B3		14		1	1 $26.69 10 $21.44 100 $19.86 1000 $19.86 10000 $19.86	Buy Now
IXYS Corporation IXGK320N60B3 IGBT 600V 500A 1700W TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGK320N60B3	Tube	283		1	1 $35.53 10 $35.53 100 $26.6072 1000 $26.6072 10000 $26.6072	Buy Now
Mouser Electronics	IXGK320N60B3		132			1 $35.53 10 $35.53 100 $26.6 1000 $26.6 10000 $26.6	Buy Now
TME	IXGK320N60B3				1	1 $25.11 10 $20.17 100 $17.97 1000 $17.97 10000 $17.97	Get Quote
IXYS Corporation IXGH20N60B IGBT 600V 40A 150W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH20N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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20N60B Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF

20N60B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
20N60B Abstract: s9011 Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	PDF	20N60B O-24s 20N60B s9011
20n60B Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	PDF	20N60B O-220AB O-263 20n60B
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	PDF	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60
Untitled Abstract: No abstract text available Text: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	PDF	20N60 20N60B O-220
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	PDF	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1
20n60b Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	PDF	20N60B 20N60B O-268 O-247
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	PDF	20N60B
20n60 Abstract: No abstract text available Text: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	PDF	20N60 20N60B O-220 20N60B IXDP20N06B
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	PDF	20N60B O-220AB O-263
Untitled Abstract: No abstract text available Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	20N60B2D1 IC110 8-06B 405B2
DSEP 15-06A Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072 Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072
20n60b Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	PDF	20N60B 20N60B O-220) O-220 O-263
20N60BD1 Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES	Original	PDF	20N60BD1 20N60BD1 O-268 O-247
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 20N60B IXGP 20N60B = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	20N60B 20N60B O-263 O-220

20N60B2D1 Abstract: No abstract text available Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	20N60B2D1 IC110 8-06B 405B2 20N60B2D1
20N60BD1 Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES	Original	PDF	20N60BD1 O-268 20N60BD1
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient	OCR Scan	PDF	20N60BU1 100ns O-247
Untitled Abstract: No abstract text available Text: aixYS HiPerFAST IGBT IXGH 20N60B VCES ^C25 VCE sat typ t.fi = = = = 600 V 40 A 1.7 V 100 ns Prelim inary data Symbol Test Conditions VCES Tj Vcon Maximum Ratings 600 V T J, = 25°C to 150°C: Rrc = 1 MQ u t 600 V VGES Continuous ±20 V VGEM Transient ±30	OCR Scan	PDF	20N60B
20N60B Abstract: lc1512 Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT V CES IC25 V CE sat typ t IXGA 20N60B IXGP 20N60B 600 V 40 A 1.7 V 100 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£2 600	OCR Scan	PDF	20N60B O-220) O-220 O-263 lc1512
Untitled Abstract: No abstract text available Text: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600	OCR Scan	PDF	20N60BD1 O-247AD
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	PDF	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
ph-15 diode Abstract: No abstract text available Text: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20	OCR Scan	PDF	20N60BD1 20N60BD1 O-268 O-247AD ph-15 diode
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT IXGA 1XGP 20N60B 20N60B VCES IC25 VCE sat typ = 600 = 40 = 1.7 tf , = 100 ns V A V Preliminary data sheet Maximum Ratings V C ES T, = 25°C to 150°C 600 V V CGR Tj = 25“C to 150°C; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient	OCR Scan	PDF	20N60B 20N60B TQ-220AB O-263
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	PDF	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1

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20N60B Price and Stock

Micro Commercial Components MSJPFR20N60-BP

Micro Commercial Components MSJPFFR20N60-BP

IXYS Corporation IXGX320N60B3

IXYS Corporation IXGK320N60B3

IXYS Corporation IXGH20N60B

20N60B Datasheets (5)

20N60B Datasheets Context Search

20N60B

20n60B

20N60 datasheet

Untitled

20N60 to220

20n60b

Untitled

20n60

Untitled

Untitled

DSEP 15-06A

20n60b

20N60BD1

Untitled

20N60B2D1

20N60BD1

Untitled

Untitled

20N60B

Untitled

IXBH 40N160

ph-15 diode

Untitled

30N120D1