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    20N60B2D1 Search Results

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    20N60B2D1 Price and Stock

    IXYS Corporation IXSA20N60B2D1

    IGBT 600V 35A 190W TO263
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    DigiKey IXSA20N60B2D1 Box 50
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    • 100 $2.774
    • 1000 $2.774
    • 10000 $2.774
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    IXYS Corporation IXSQ20N60B2D1

    IGBT 600V 35A 190W TO3P
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    DigiKey IXSQ20N60B2D1 Bulk
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    IXYS Corporation IXSH20N60B2D1

    IGBT 600V 35A 190W TO247
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    DigiKey IXSH20N60B2D1 Bulk 30
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    • 100 $3.297
    • 1000 $3.297
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    IXYS Corporation IXSP20N60B2D1

    IGBT 600V 35A 190W TO220
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    DigiKey IXSP20N60B2D1 Bulk 50
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    • 100 $2.7482
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    IXYS Integrated Circuits Division IXSA20N60B2D1

    IGBT DIS.DIODE SINGLE 20A 600V H.SPEED TO263(D2PAK
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    Ozdisan Elektronik IXSA20N60B2D1 1
    • 1 $3.82382
    • 10 $3.82382
    • 100 $3.4762
    • 1000 $3.4762
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    20N60B2D1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 20N60B2D1 IC110 8-06B 405B2

    DSEP 15-06A

    Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072

    Untitled

    Abstract: No abstract text available
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 20N60B2D1 IC110 5-06A

    20N60B2D1

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 20N60B2D1 IC110 8-06B 405B2 20N60B2D1

    SP20N60B2D1

    Abstract: SP20N60 20N60B2
    Text: IXSP 20N60B2 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 20N60B2 20N60B2D1 IC110 8-06B 405B2 SP20N60B2D1 SP20N60 20N60B2

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110

    4013V

    Abstract: Siemens DIODE E 1220 30N60B2D1
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Siemens DIODE E 1220

    Abstract: 30N60B2D1 30N60B ixst30n60b2d1
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110 Siemens DIODE E 1220 30N60B2D1 30N60B ixst30n60b2d1