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    100B470JW Price and Stock

    Kyocera AVX Components 100B470JW500XT1K

    CAP CER 47PF 500V P90 1111
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    DigiKey 100B470JW500XT1K Cut Tape 1,313 1
    • 1 $7.09
    • 10 $4.873
    • 100 $3.6943
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    100B470JW500XT1K Digi-Reel 1,313 1
    • 1 $7.09
    • 10 $4.873
    • 100 $3.6943
    • 1000 $3.6943
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    100B470JW500XT1K Reel 500 500
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    Avnet Americas 100B470JW500XT1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100B470JW500XT1K
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    Richardson RFPD 100B470JW500XT1K 1,000
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    • 1000 $2.42
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    Kyocera AVX Components 100B470JW1500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW1500XT)
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    Avnet Americas 100B470JW1500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B470JW1500XT
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    Kyocera AVX Components 100B470JW500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW500XT)
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    Avnet Americas 100B470JW500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B470JW500XT 60
    • 1 $4.94
    • 10 $4.25
    • 100 $3.19
    • 1000 $2.57
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    TTI 100B470JW500XT Reel 500
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    Richardson RFPD 100B470JW500XT 500
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    Kyocera AVX Components 100B470JW1000XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW1000XT)
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    Avnet Americas 100B470JW1000XT Tape w/Leader 16 Weeks 500
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    TTI 100B470JW1000XT Reel 500
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    Kyocera AVX Components 100B470JWN500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JWN500XT)
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    Avnet Americas 100B470JWN500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B470JWN500XT
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    Find more 100B470JW price and stock on Findchips.com

    100B470JW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B470JW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 47PF 500V P90 1111 Original PDF
    100B470JW500XT1K American Technical Ceramics Ceramic Capacitor 47PF 500V P90 1111 Original PDF

    100B470JW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS03-202RFPP mosfet 1412

    mosfet j122

    Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J
    Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 AGR09085E del00 AGR09085EU AGR09085EF mosfet j122 AGR09085EF J118 MOSFET j122 mosfet AGR09085EU JESD22-C101A RM73B2B120J

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)

    agere c8 c1

    Abstract: 100b8r2jw 100B6R8JW
    Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A

    AGR09180EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A

    transistor MARKING NC KRC

    Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP

    J293

    Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
    Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A

    C20 CT

    Abstract: 100B220 sprague CT series
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series

    mosfet j122

    Abstract: J118 MOSFET j122 mosfet ALT500
    Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 iGR09085EF DS04-055RFPP DS04-028RFPP) mosfet j122 J118 MOSFET j122 mosfet ALT500

    AGR09130E

    Abstract: AGR09130EF AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 delivering10-12, DS04-055RFPP DS04-028RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)

    Johanson Technology

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology

    Untitled

    Abstract: No abstract text available
    Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 ca1212 DS04-028RFPP DS03-057RFPP)

    926 sprague

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague

    z921

    Abstract: No abstract text available
    Text: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 c2000, DS03-057RFPP DS01-209RFPP) z921

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP)

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J
    Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    C40 Sprague

    Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09180E Hz--895 AGR09180E DS04-031RFPP DS02-342RFPP) C40 Sprague C201A Z25 transistor UT-141A AGR09180EF AGR09180EU JESD22-C101A