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Kyocera AVX Components 100B6R8JT500XT1K CAP CER 6.8PF 500V P90 1111
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DigiKey	100B6R8JT500XT1K	Digi-Reel	4,410		1	1 $3.7 10 $2.502 100 $1.9539 1000 $1.9539 10000 $1.9539	Buy Now
	100B6R8JT500XT1K	Cut Tape	4,410		1	1 $3.7 10 $2.502 100 $1.9539 1000 $1.9539 10000 $1.9539	Buy Now
	100B6R8JT500XT1K	Reel	3,500		500	1 - 10 - 100 - 1000 $1.95392 10000 $1.95392	Buy Now
Kyocera AVX Components 100B6R8BT500XT1K CAP CER 6.8PF 500V P90 1111
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DigiKey	100B6R8BT500XT1K	Digi-Reel	2,961		1	1 $9.28 10 $6.478 100 $4.9838 1000 $4.9838 10000 $4.9838	Buy Now
	100B6R8BT500XT1K	Cut Tape	2,961		1	1 $9.28 10 $6.478 100 $4.9838 1000 $4.9838 10000 $4.9838	Buy Now
	100B6R8BT500XT1K	Reel	2,500		500	1 - 10 - 100 - 1000 $4.18537 10000 $3.98288	Buy Now
Richardson RFPD	100B6R8BT500XT1K				1,000	1 - 10 - 100 - 1000 $2.67 10000 $2.13	Buy Now
Kyocera AVX Components 100B6R8CT500XT1K CAP CER 6.8PF 500V P90 1111
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DigiKey	100B6R8CT500XT1K	Cut Tape	1,259		1	1 $5.42 10 $3.668 100 $2.7351 1000 $2.7351 10000 $2.7351	Buy Now
	100B6R8CT500XT1K	Digi-Reel	1,259		1	1 $5.42 10 $3.668 100 $2.7351 1000 $2.7351 10000 $2.7351	Buy Now
	100B6R8CT500XT1K	Reel	1,000		500	1 - 10 - 100 - 1000 $2.21892 10000 $2.05437	Buy Now
Kyocera AVX Components 100B6R8CW500XT1K CAP CER 6.8PF 500V P90 1111
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DigiKey	100B6R8CW500XT1K	Digi-Reel	873		1	1 $6.05 10 $4.118 100 $3.0906 1000 $3.0906 10000 $3.0906	Buy Now
	100B6R8CW500XT1K	Cut Tape	873		1	1 $6.05 10 $4.118 100 $3.0906 1000 $3.0906 10000 $3.0906	Buy Now
	100B6R8CW500XT1K	Reel	500		500	1 - 10 - 100 - 1000 $2.54233 10000 $2.36038	Buy Now
Richardson RFPD	100B6R8CW500XT1K				1,000	1 - 10 - 100 - 1000 $2.41 10000 $2.1	Buy Now
Kyocera AVX Components 100B6R8JP500XT CAP CER 6.8PF 500V P90 1111
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DigiKey	100B6R8JP500XT	Reel			500	1 - 10 - 100 - 1000 $3.68224 10000 $3.68224	Buy Now
Richardson RFPD	100B6R8JP500XT				500	1 - 10 - 100 - 1000 $2.64 10000 $2.35	Buy Now

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100B6R8 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
100B6R8BT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111	Original	PDF
100B6R8BT500XT1K	American Technical Ceramics	Ceramic Capacitor 6.8PF 500V P90 1111	Original	PDF
100B6R8BTN500X	American Technical Ceramics	6.8PF 500V CAP CER SMD	Original	PDF
100B6R8BTN500XC100	American Technical Ceramics	6.8PF 500V CAP CER SMD	Original	PDF
100B6R8BW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111	Original	PDF
100B6R8BW500XT1K	American Technical Ceramics	Ceramic Capacitor 6.8PF 500V P90 1111	Original	PDF
100B6R8CT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111	Original	PDF
100B6R8CT500XT1K	American Technical Ceramics	Ceramic Capacitor 6.8PF 500V P90 1111	Original	PDF
100B6R8CW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111	Original	PDF
100B6R8CW500XT1K	American Technical Ceramics	Ceramic Capacitor 6.8PF 500V P90 1111	Original	PDF
100B6R8JP500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111	Original	PDF
100B6R8JT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111	Original	PDF
100B6R8JT500XT1K	American Technical Ceramics	Ceramic Capacitor 6.8PF 500V P90 1111	Original	PDF

100B6R8 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3
th 2190 Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101 Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	PDF	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3
A113 Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1
ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	PDF	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. H suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3	Original	PDF	MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3
Untitled Abstract: No abstract text available Text: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S19100H 37ficers, MRF6S19100HR3 MRF6S19100HSR3
100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6P21190HR6 MRF6P21190HR6
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6

MRF5S21130H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110	Original	PDF	MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110	Original	PDF	MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130SR3
MRF5S21045N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N
MRF6S21100H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	PDF	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N
NIPPON CAPACITORS Abstract: j668 Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
J161 mosfet transistor Abstract: MOSFET J161 100B6R8JW Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW
MRF6S21140HSR3 Abstract: J932 Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S21140HR3 MRF6S21140HSR3 J932

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Kyocera AVX Components 100B6R8JT500XT1K

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Kyocera AVX Components 100B6R8CT500XT1K

Kyocera AVX Components 100B6R8CW500XT1K

Kyocera AVX Components 100B6R8JP500XT

100B6R8 Datasheets (13)

100B6R8 Datasheets Context Search

J593

Untitled

th 2190

C1206C104KRAC7800

100B101JW

A113

ipc 9850

Untitled

Untitled

Untitled

100B0R5BW

Untitled

Untitled

Untitled

MRF5S21130H

Untitled

Untitled

MRF5S21045N

MRF6S21100H

Untitled

NIPPON CAPACITORS

FERRITE BEAD 1000 OHM 0805

J161 mosfet transistor

MRF6S21140HSR3