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RF Industries RF35M-35F-00000 3.5MM MALE-3.5MM FEMALE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF35M-35F-00000	Bag	44		1	1 $32.2 10 $32.2 100 $32.2 1000 $32.2 10000 $32.2	Buy Now
Richardson RFPD	RF35M-35F-00000				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
RF Industries RF35M-35M-00000 3.5MM MALE-3.5MM MALE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF35M-35M-00000	Bag	30		1	1 $40.83 10 $40.83 100 $40.83 1000 $40.83 10000 $40.83	Buy Now
Richardson RFPD	RF35M-35M-00000				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samtec Inc PRF35-P-C-EP-402-SS CONN 3.50MM CABLE PLUG Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PRF35-P-C-EP-402-SS	Bulk	21		1	1 $63.93 10 $52.116 100 $44.625 1000 $44.625 10000 $44.625	Buy Now
Mouser Electronics	PRF35-P-C-EP-402-SS		27			1 $50.56 10 $45.19 100 $42.96 1000 $42.96 10000 $42.96	Buy Now
Samtec Inc PRF35-P-C-EP-405-SS CONN 3.50MM CABLE PLUG Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PRF35-P-C-EP-405-SS	Bulk	15		1	1 $51.04 10 $41.607 100 $34.8833 1000 $34.8833 10000 $34.8833	Buy Now
Mouser Electronics	PRF35-P-C-EP-405-SS		6			1 $48.2 10 $46.28 100 $46.28 1000 $46.28 10000 $46.28	Buy Now
Samtec Inc PRF35-J-C-EP-402-BS CONN 3.50MM CABLE JACK Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PRF35-J-C-EP-402-BS	Bulk	4		1	1 $84.42 10 $68.826 100 $60.4876 1000 $60.4876 10000 $60.4876	Buy Now
Avnet Americas	PRF35-J-C-EP-402-BS	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PRF35-J-C-EP-402-BS		2			1 $58.3 10 $56.03 100 $41.86 1000 $41.86 10000 $41.86	Buy Now
Powell Electronics	PRF35-J-C-EP-402-BS		10		1	1 $56.93 10 $54.72 100 $40.88 1000 $40.88 10000 $40.88	Buy Now
Master Electronics	PRF35-J-C-EP-402-BS					1 $83.43 10 $69.42 100 $46.33 1000 $38.5 10000 $38.5	Buy Now

Sager	PRF35-J-C-EP-402-BS		15		1	1 $56.93 10 $54.72 100 $40.88 1000 $34.42 10000 $34.42	Buy Now

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RF35 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RF35		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
RF3501E		RF Monolithics	SAW Filters, Filters, FILTER SAW 866.1 MHZ		Original	PDF

RF35 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: • • • • RF3501E 863.0 - 870.0 MHz Filter Optimized for use with the TRC103 Transceiver Balanced 150 ohm IC Interface Complies with Directive 2002/95/EC RoHS 866.1 MHz SAW Filter Pb Absolute Maximum Ratings Rating Value Units +15 dBm ±5 V Operating Temperature Range	Original	PDF	RF3501E TRC103 2002/95/EC SM3030-8 RF3501E
ferrite antenna Abstract: ferrite RF35 RF-45 2C10 FERRITE core datasheet ferrite cores RF10 PUF-D03CA IRL32 Text: Sintered Ferrite Cores And Ferrite Powders For The RFID Systems Ferrites For The RFID Systems Sintered Ferrite Cores For Antennas And Shields RF RF10 series Ferrite Powders IR series 9 1 1. at 100kHz, 0.4A/m, 23 2 °C RF35 90 1 RF45 RF70 RF75 230 1 1300 *1	Original	PDF	100kHz, 16kA/m] PUF-D03CA ferrite antenna ferrite RF35 RF-45 2C10 FERRITE core datasheet ferrite cores RF10 IRL32
RF3501E Abstract: TRC103 1218 footprint dimension Text: • • • • RF3501E 863.0 - 870.0 MHz Filter Optimized for use with the TRC103 Transceiver Balanced 150 ohm IC Interface Complies with Directive 2002/95/EC RoHS 866.1 MHz SAW Filter Pb Absolute Maximum Ratings Rating Value Units +15 dBm ±5 V Operating Temperature Range	Original	PDF	RF3501E TRC103 2002/95/EC SM3030-8 RF3501E 1218 footprint dimension
rf35 Abstract: RF10 RF-35 RF-45 RFID Text: TDK CORPORATION TDK CORPORATION RF, IR series Ni-Zn RF10 9* 1. at 100kHz, 0.4A/m, 23 2 °C RF35 1 90 Mn-Zn RF45 1 RF70 230 * 2. at 1kHz, 0.4A/m, 23 1 1300 RF75 1 1800 2 2°C RoHS指令対応：EU Directive を使用していないことを表します。	Original	PDF	100kHz, 2002/95/EC 56MHz 952954MHz 56MHzRFIDPDA 120150kHz 56MHzRFID 3m34m4 680mm BSF-D03JD rf35 RF10 RF-35 RF-45 RFID
AGR19045XF Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045EF Hz--1990 AGR19045XF
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF TH 2190 HOT Transistor
X3DC18E2S Abstract: No abstract text available Text: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier	Original	PDF	X3DC18E2S X3DC18E2S RF-35, RO4350 20log
12065G105AT2A Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
RFH54006WG Abstract: a652 RFHD4012 IEC60335-1 Schrack rf RFH34012WG12VDC Text: General Purpose Relays PCB Relays SCHRACK Power Relay RF n 1 pole 16A, 1 form A NO or 1 form B (NC) contact power 400mW n Reinforced insulation (EN 61810, 60335, 60730) n Ambient temperature up to 105°C n Quick connect terminals for load side n WG version: Materials in accordance to IEC 60335-1	Original	PDF	400mW UL1446 60VDC F0273-BI E214025, 250VAC 12VDC RFH54006WG a652 RFHD4012 IEC60335-1 Schrack rf RFH34012WG12VDC
RF35 Abstract: No abstract text available Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	PDF	BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35
TRANSISTOR J601 Abstract: gp816 RF35 J2396 J249 Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249
6603 Shenzhen Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3
Untitled Abstract: No abstract text available Text: Model X3DC09E2S RevA Doherty Combiner b Description The X3DC09E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC09E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as	Original	PDF	X3DC09E2S X3DC09E2S RF-35, RO4350 20log
RF power amplifier MHz Abstract: No abstract text available Text: Model X3DC21E2S Rev A Doherty Combiner b Description The X3DC21E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC21E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance	Original	PDF	X3DC21E2S X3DC21E2S RF-35, RO4350 20log RF power amplifier MHz
BLF7G20L-90P Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70 Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70
BLF7G20LS-140P Abstract: 850 SMD Rework Station RF35 Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Untitled Abstract: No abstract text available Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF10M6135; BLF10M6LS135 BLF10M6135
J122 SMD TRANSISTOR Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN

RF35 Search Results

RF35 Price and Stock

RF Industries RF35M-35F-00000

RF Industries RF35M-35M-00000

Samtec Inc PRF35-P-C-EP-402-SS

Samtec Inc PRF35-P-C-EP-405-SS

Samtec Inc PRF35-J-C-EP-402-BS

RF35 Datasheets (2)

RF35 Datasheets Context Search

Untitled

ferrite antenna

RF3501E

rf35

AGR19045XF

TH 2190 HOT Transistor

X3DC18E2S

12065G105AT2A

RFH54006WG

RF35

TRANSISTOR J601

6603 Shenzhen

J593

transistor 7350

Untitled

Untitled

Untitled

RF power amplifier MHz

BLF7G20L-90P

BLF7G20LS-140P

AGR09030GUM

Z9 TRANSISTOR SMD

Untitled

J122 SMD TRANSISTOR