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    WED416S8030A10S Search Results

    WED416S8030A10S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    WED416S8030A10SI White Electronic Designs 2Mx16x 4 Banks Synchronous DRAM Original PDF
    WED416S8030A10SI White Electronic Designs 2M x 16 Bits x 4 Banks Synchronous DRAM Original PDF

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    WED416S8030A

    Abstract: No abstract text available
    Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF WED416S8030A WED416S8030A 83MHz 100MHz) 83MHz) lengt471) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI

    jedec ms-024

    Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
    Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows


    Original     		PDF WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit

    Untitled

    Abstract: No abstract text available
    Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks 100MHz

    WED416S8030A

    Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI
    Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original     		PDF WED416S8030A 2Mx16x WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks WED416S4030A 2MX16x4 WED416S8030A10SI

    Untitled

    Abstract: No abstract text available
    Text: WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original     		PDF WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz)

    D7678

    Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
    Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise


    Original     		PDF WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s