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Untitled Abstract: No abstract text available Text: 144PIN PC100 Unbuffered SO-DIMM 128MB With 8M X 16 CL2 TS16MSS64V8C2 Placement Description The TS16MSS64V8C2 is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MSS64V8C2 consists of 8 piece of CMOS 2Mx16bitsx4banks Synchronous DRAMs in TSOP-II	Original	PDF	144PIN PC100 128MB TS16MSS64V8C2 TS16MSS64V8C2 2Mx16bitsx4banks 400mil 144-pin
WED416S8030A Abstract: No abstract text available Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	PDF	WED416S8030A WED416S8030A 83MHz 100MHz) 83MHz) lengt471) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI
jedec ms-024 Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows	Original	PDF	WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit
Untitled Abstract: No abstract text available Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	PDF	WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks 100MHz
Untitled Abstract: No abstract text available Text: 144PIN PC133 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V6C Pin Identification Description The TS16MSS64V6C is a 16M bit x 64 Synchronous Dynamic RAM TS16MSS64V6C high-density consists memory of 8 module. piece of Symbol The CMOS Function A0~A11 Address inputs	Original	PDF	144PIN PC133 128MB 8Mx16 TS16MSS64V6C TS16MSS64V6C JEP-108E
WED416S8030A Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 100, 83MHz SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) Burst Operation	Original	PDF	WED416S8030A 2Mx16x WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks WED416S4030A 2MX16x4 WED416S8030A10SI
D7678 Abstract: WED416S8030A 2MX16x4 WED416S8030A10s Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise	Original	PDF	WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s