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    VPS05605 Search Results

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    BAS40-07W

    Abstract: No abstract text available
    Text: BAS40-07W 3 Silicon Schottky Diode 4  General-purpose diode for high-speed switching  Circuit protection  Voltage clamping 2  High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -


    Original     		PDF BAS40-07W VPS05605 EHA07008 OT343 EHB00039 Aug-23-2001 EHB00038 BAS40-07W

    marking code g1s

    Abstract: Q62702-F1774 SOT 343 MARKING BF
    Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    Original     		PDF VPS05605 Q62702-F1774 OT-343 Jun-05-1998 marking code g1s Q62702-F1774 SOT 343 MARKING BF

    BAT68-07W

    Abstract: No abstract text available
    Text: BAT68-07W Silicon Schottky Diodes 3  For mixer applications in the VHF / UHF range 4  For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s


    Original     		PDF BAT68-07W VPS05605 EHA07008 OT343 EHD07103 EHD07104 Aug-08-2001 BAT68-07W

    Silicon N Channel MOSFET Tetrode

    Abstract: Q62702-F1772 marking code g1s BF 2000W
    Text: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration


    Original     		PDF Q62702-F1772 VPS05605 OT-343 Silicon N Channel MOSFET Tetrode Q62702-F1772 marking code g1s BF 2000W

    Untitled

    Abstract: No abstract text available
    Text: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 4-07W VPS05605 EHA07008 OT-343 50/60Hz, EHB00059 Oct-07-1999

    marking 81W

    Abstract: No abstract text available
    Text: BAR 81W Silicon RF Switching Diode 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol


    Original     		PDF VPS05605 OT-343 Oct-05-1999 100MHz marking 81W

    ZL 58

    Abstract: No abstract text available
    Text: BFP 183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05605 OT-343 Oct-12-1999 ZL 58

    Untitled

    Abstract: No abstract text available
    Text: BFP 136W NPN Silicon RF Transistor 3  For power amplifier in DECT and PCN systems 4  fT = 5.5GHz  Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration


    Original     		PDF VPS05605 OT-343 900MHz Oct-12-1999

    Untitled

    Abstract: No abstract text available
    Text: BF 2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 EHA07461 OT-343 Feb-08-2001

    BFP620

    Abstract: BFP620 acs BFP620 applications note GFT45
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		PDF BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45

    IC 7481 pin configuration

    Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
    Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1 VPS05605  Gold metallization for high reliability


    Original     		PDF BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Sep-26-2001 IC 7481 pin configuration IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor

    BF2030W

    Abstract: No abstract text available
    Text: BF2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030W VPS05605 EHA07461 OT343 Oct-05-2001 BF2030W

    Untitled

    Abstract: No abstract text available
    Text: BFP183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP183W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP460 NPN Silicon RF Transistor* 3 4 • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 2 • Excellent ESD performance typical value > 1500V HBM 1 VPS05605 • High fT of 22 GHz


    Original     		PDF BFP460 VPS05605 OT343

    VPS05605

    Abstract: transistor marking 47s bas 44 marking 47s
    Text: BAS 40-07W Silicon Schottky Diode Preliminary data 3 • General-purpose diode for high-speed switching 4 • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 VPS05605 BAS 40-07W Type


    Original     		PDF 0-07W VPS05605 Q62702- OT-343 Sep-09-1998 VPS05605 transistor marking 47s bas 44 marking 47s

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 1E-14 Jan-28-2003 BFP36

    Untitled

    Abstract: No abstract text available
    Text: BFP182W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP182W VPS05605 OT343

    w1901

    Abstract: No abstract text available
    Text: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS 28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-343 Maximum Ratings


    Original     		PDF VPS05605 EHA07289 OT-343 Oct-07-1999 EHB00037 EHB00034 w1901

    marking 47s

    Abstract: No abstract text available
    Text: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2


    Original     		PDF 0-07W VPS05605 EHA07008 OT-343 EHB00040 EHB00041 Oct-07-1999 EHD07068 marking 47s

    Untitled

    Abstract: No abstract text available
    Text: BFP 182W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05605 OT-343 900MHz Oct-12-1999

    900 mhz schottky diode

    Abstract: marking 55 Sot-343
    Text: BAT 63-07W Silicon Schottky Diode Preliminary data 3 • Low barrier diode for detectors up to GHz 4 frequencies • For high-speed switching applications • Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 3-07W VPS05605 EHA07008 OT-343 Aug-05-1999 900 mhz schottky diode marking 55 Sot-343

    BF2040W

    Abstract: No abstract text available
    Text: BF2040W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2040W VPS05605 EHA07461 OT343 Aug-03-2001 BF2040W

    BFP540

    Abstract: INFINEON application note
    Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note

    BFP460

    Abstract: No abstract text available
    Text: BFP460 NPN Silicon RF Transistor* 3 4 • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 2 • Excellent ESD performance • High fT of 22 GHz 1 VPS05605 * Short-term description


    Original     		PDF BFP460 VPS05605 OT343 Jun-14-2004 BFP460