2030R
Abstract: No abstract text available
Text: BF 2030R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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2030R
EHA07461
OT-143R
Feb-09-2001
2030R
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Untitled
Abstract: No abstract text available
Text: BF 2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
EHA07461
OT-343
Feb-08-2001
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BF2030W
Abstract: No abstract text available
Text: BF2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BF2030W
VPS05605
EHA07461
OT343
Oct-05-2001
BF2030W
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Untitled
Abstract: No abstract text available
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2030.
EHA07461
BF2030
BF2030R
BF2030W
OT143
OT143R
OT343
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VPS05178
Abstract: ma1022
Text: BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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VPS05178
EHA07461
OT-143
Dec-10-1999
VPS05178
ma1022
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Untitled
Abstract: No abstract text available
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BF2030.
EHA07461
BF2030
BF2030R
BF2030W
OT143
OT143R
OT343
dis00k
Sep-29-2004
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Untitled
Abstract: No abstract text available
Text: BF 2040 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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VPS05178
EHA07461
OT-143
Feb-14-2001
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Untitled
Abstract: No abstract text available
Text: BF 2030 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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VPS05178
EHA07461
OT-143
Feb-09-2001
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BF2040W
Abstract: No abstract text available
Text: BF2040W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2040W
VPS05605
EHA07461
OT343
Aug-03-2001
BF2040W
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BF2030
Abstract: BF2030R BF2030W
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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PDF
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BF2030.
EHA07461
BF2030
OT143
BF2030R
OT143R
BF2030W
OT343
Apr-23-2004
BF2030
BF2030R
BF2030W
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Untitled
Abstract: No abstract text available
Text: BF 2040W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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VPS05605
EHA07461
OT-343
Feb-14-2001
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BF2040
Abstract: VPS05178
Text: BF2040 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2040
VPS05178
EHA07461
OT143
Aug-03-2001
BF2040
VPS05178
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BF2040
Abstract: VPS05178 K1428
Text: BF2040 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2040
VPS05178
EHA07461
OT143
Oct-05-2001
BF2040
VPS05178
K1428
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sot143 marking code G2
Abstract: DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2030.
EHA07461
BF2030
OT143
BF2030R
OT143R
BF2030W
OT343
sot143 marking code G2
DIN 6784
BF2030
BF2030R
BF2030W
BFP181
BFP181R
BGA420
E6327
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BF2030W
Abstract: No abstract text available
Text: BF2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BF2030W
VPS05605
EHA07461
OT343
Aug-03-2001
BF2030W
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2030R
Abstract: No abstract text available
Text: BF 2030R Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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2030R
EHA07461
OT-143R
Jan-17-2000
2030R
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SOT 343 MARKING BF
Abstract: No abstract text available
Text: BF 2040W Silicon N-Channel MOSFET Tetrode Target data sheet 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
EHA07461
OT-343
Mar-15-1999
SOT 343 MARKING BF
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BF2030R
Abstract: marking NEs
Text: BF2030R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2030R
EHA07461
OT143R
Oct-05-2001
BF2030R
marking NEs
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p 1S marking SOT143
Abstract: BF 2040 VPS05178
Text: BF 2040 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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VPS05178
EHA07461
OT-143
Mar-15-1999
p 1S marking SOT143
BF 2040
VPS05178
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BF2040W
Abstract: No abstract text available
Text: BF2040W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BF2040W
VPS05605
EHA07461
OT343
Oct-05-2001
BF2040W
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BF2040R
Abstract: K1428
Text: BF2040R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BF2040R
EHA07461
OT143R
Oct-05-2001
BF2040R
K1428
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Untitled
Abstract: No abstract text available
Text: BF 2040R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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2040R
EHA07461
OT-143R
Feb-14-2001
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MA1022
Abstract: No abstract text available
Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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VPS05605
EHA07461
OT-343
Nov-24-1999
MA1022
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BF2030
Abstract: VPS05178 V300-28
Text: BF2030 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2030
VPS05178
EHA07461
OT143
Oct-05-2001
BF2030
VPS05178
V300-28
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