Untitled
Abstract: No abstract text available
Text: LED Traffic Signal Series 438 230Vac 200 mm / 300 mm EU4 DIN VDE 0832 Red, Amber, Green and White View of blackened lens type signal when off • High efficiencies as a result of the new High Flux Reflector Technology and Central Light Source • No Colour Phantom when fitted with the blackened smoked effect
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230Vac
200mm
300mm
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Untitled
Abstract: No abstract text available
Text: LED Traffic Signal Series 438 230Vac 200 mm / 300 mm EU4 DIN VDE 0832 Red Amber and Green View of blackened lens type signal when off • High efficiencies as a result of the new High Flux Reflector Technology and Central Light Source • No Colour Phantom when fitted with the blackened smoked effect
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230Vac
200mm
300mm
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MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
MOC3001
MOC3000
scr optoisolator
mr5060
SCR GATE DRIVER
IEC204AXK
VDE0113
VDE0160
VDE0832
VDE0833
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k 6115
Abstract: dc to dc Optoisolator Optoisolator MOC8080 VDE0160 VDE0832 VDE0833 IEC-204
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC8080 6-Pin D IP O p to iso lato r High Tem perature D arlington O utput • • • • • • Convenient Plastic Dual-ln-Line Package High Sensitivity to Low Input Drive Current Low, Stable Leakage Current at Elevated Temperature
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833,
VDE0883/
30A-02
k 6115
dc to dc Optoisolator
Optoisolator
MOC8080
VDE0160
VDE0832
VDE0833
IEC-204
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4N40
Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65VDE0860,
c0nr6urat10n
30A-02
4N40
MR5060
scr bt series 200 A
4N39
IEC204A
VDE0113
VDE0160
VDE0832
VDE0833
scr optoisolator
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MOC8020
Abstract: MOC8021 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA M O C8020 MOC8021 6-Pin DIP Optoisolators Darlington Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high sensitivity at low input
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E54915^
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE086Q,
VDE0110b,
30A-02
MOC8020
MOC8021
VDE0160
VDE0832
VDE0833
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Y14SM
Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Text: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-02
Y14SM
VDE0883
MOC8030
MOC8050
VDE0160
VDE0832
VDE0833
IEC204
IEC-204
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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IEC-204
Abstract: motorola transistor cross IEC204
Text: GlobalOptoisolator Motorola’s optolsolators satisfy the broad range of regulatory requirements Imposed throughout the world. “Global" optolsolators are y o u r “ passport" to the world marketplace. Motorola 6-PIN DIP Optolsolators Feature: • “Global" Safety Regulatory Approvals: VDE 1 , UL, CSA, SETI, SEMKO, DEMKO, NEMKO,
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IEC950/VDE0806
VDFE0805,
IEC65/VDE0860,
VDE110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833.
MOC8104S)
MOC8104SR2)
IEC-204
motorola transistor cross
IEC204
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C8050
Abstract: C3050
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 80 30 M O C 80 50 6-P in D IP O p to is o la to rs Darlington Output These devices co n s is t o f g a lliu m arsenide in fra re d e m ittin g d io d e s o p tic a lly c o up le d to m o n o lith ic silico n p h o to d a rlin g to n d etectors.
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E54915
30A-02
C8050
C3050
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IEC-204
Abstract: IEC204 Optoisolators VDE-0860 MOC8104F
Text: GLOBAL OPTOISOLATORS •<j VTT y There Is no need to worry about meeting the broad range of requirements Imposed throughout the world. With Motorola optolsolators, your marketplace is indeed global. Motorola 6-PIN DIP Optoisolators Feature: • "Global” Safety Regulatory Approvals: VDE 1 , UL, CSA, SETI, SEMKO, DEMKO, NEMKO,
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IEC950/VDE0806
VDFE0805,
IEC65/VDE0860,
VDE110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833.
MOC8104S
MOC8104F)
IEC-204
IEC204
Optoisolators
VDE-0860
MOC8104F
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aiou
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
IEC204/VDE0113
30A-02
730D-02
aiou
H11AV2
H11AV3
H11AV1A
H11AV2A
H11AV3A
ge h11a
transistor BC 176
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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Untitled
Abstract: No abstract text available
Text: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica
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H11B1
H11B2
H11B3
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
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C3883
Abstract: GE H11D2 verin VDE0833 H11D1 GE
Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r
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H11D1
H11D3
E54915
C3883
GE H11D2
verin
VDE0833
H11D1 GE
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730A-02
Abstract: IEC-204 VDE0860 MOC8111 MOC8112 VDE0160 VDE0832 VDE0833 MOC8111 MOTOROLA
Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA M O C 8 1 11 M OC8112 M OC8113 6-Pin D IP O p to iso lato rs T ra n sisto r O u tpu t These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base-to-Pin 6 connection
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VQE0110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833,
30A-02
730A-02
IEC-204
VDE0860
MOC8111
MOC8112
VDE0160
VDE0832
VDE0833
MOC8111 MOTOROLA
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VDE0860
Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Text: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.
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E54915
IEC380/VDE0806,
IEC435
VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204//^
VDE0113,
VDE0160,
VDE0832,
VDE0860
VDE0113
VDE0160
VDE0805
VDE0832
VDE0833
VDE0883
OPTO-ISOLATOR
optoisolator MCT2E
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MOC1005
Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/
VDE0113,
VDE0160,
VDE0832,
VDE0833,
MOC1005
MOC1006
VQE 24 led
VDE0113
VDE0160
VDE0832
VDE0833
transistor J5X
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H11D1
Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
Text: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,
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H11D1
H11D3
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
VDE0113
VDE0160
VDE0832
VDE0833
VDE0883
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CNY17-1 Opto-isolator
Abstract: CNY17-2 Opto-isolator CNY17-2 VDE0160 VDE0832 VDE0833 cny17.2 package details
Text: MOTOROLA •i SEM ICONDUCTOR TECHNICAL DATA CINIY17-1 CNY17-2 CNY17-3 6-Pin DIP Optoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • •
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E54915
30A-02
CNY17-1 Opto-isolator
CNY17-2 Opto-isolator
CNY17-2
VDE0160
VDE0832
VDE0833
cny17.2 package details
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H11GX
Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec tors which have integral base-emitter resistors. The on-chip resistors improve higher
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H11G1
H11G2
H11G1,
H11G2,
H11G3
50-VOLT,
H11Gx
H11Gx
GE H11G1
H11G2
H11G1
IEC204
VDE0113
VDE0160
VDE0832
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H11B1
Abstract: H11B2 VDE0160 VDE0832 VDE0833
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica
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OCR Scan
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PDF
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-02
H11B1
H11B2
VDE0160
VDE0832
VDE0833
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