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    Vishay Semiconductors H11D3

    OPTOISO 5.3KV TRANS W/BASE 6DIP
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    DigiKey H11D3 Tube 1,918 1
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    Onlinecomponents.com H11D3 989
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    onsemi H11D3SR2M

    OPTOISO 4.17KV TRANS W/BASE 6SMD
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    DigiKey H11D3SR2M Digi-Reel 1,400 1
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    H11D3SR2M Cut Tape 1,400 1
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    H11D3SR2M Reel 1,000 1,000
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    Arrow Electronics H11D3SR2M 7 36 Weeks 1
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    Newark H11D3SR2M Reel 1,000
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    Quest Components H11D3SR2M 1,600
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    Avnet Silica H11D3SR2M 16 Weeks 1,000
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    Isocom Components H11D3XSMT-R

    6PIN TRANSISTOR DETECTOR, SINGLE
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    DigiKey H11D3XSMT-R Digi-Reel 1,000 1
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    H11D3XSMT-R Reel 1,000 1,000
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    H11D3XSMT-R Cut Tape 1,000 1
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    • 10 $0.976
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    onsemi H11D3M

    OPTOISO 4.17KV TRANS W/BASE 6DIP
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    DigiKey H11D3M Tube 823 1
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    Avnet Americas H11D3M Bulk 15 Weeks 3,000
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    Mouser Electronics H11D3M 325
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    Arrow Electronics H11D3M 1 36 Weeks 1
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    Newark H11D3M Bulk 1,000
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    TME H11D3M 770 1
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    Avnet Silica H11D3M 1,000 16 Weeks 1,000
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    New Advantage Corporation H11D3M 1,674 1
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    onsemi H11D3SM

    OPTOISO 4.17KV TRANS W/BASE 6SMD
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    DigiKey H11D3SM Tube 295 1
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    Avnet Americas H11D3SM Bulk 15 Weeks 3,000
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    Mouser Electronics H11D3SM 1,000
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    Arrow Electronics H11D3SM 1,760 36 Weeks 1
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    Newark H11D3SM Bulk 1,000
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    H11D3 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11D3 Fairchild Semiconductor High Voltage Phototransistor Optocoupler Original PDF
    H11D3 Fairchild Semiconductor 6-pin DIP high voltage transistor Optocoupler Original PDF
    H11D3 Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6SMD Original PDF
    H11D3 Infineon Technologies Optocoupler, 6 Pin, Sngl, 20% CTR, High Reverse Voltage Original PDF
    H11D3 Infineon Technologies OptoCoupler, Phototransistor, 5.3 KV, TRIOS Optocoupler Original PDF
    H11D3 Isocom Components 6V, 60mA high voltage optically coupled isolated phototransistor output Original PDF
    H11D3 Siemens PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER Original PDF
    H11D3 Vishay Semiconductors Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
    H11D3 Vishay Siliconix Optocouplers Original PDF
    H11D3 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Photo Transistor Output, 5.3kV, 30V Min. BV CEO Scan PDF
    H11D3 Fairchild Semiconductor Optoelectronics Data Book 1980 Scan PDF
    H11D3 Fairchild Semiconductor Optoelectronics Data Book 1979 Scan PDF
    H11D3 General Electric Semiconductor Data Handbook 1977 Scan PDF
    H11D3 General Instrument High Voltage VDE Approved Phototransistor Optocouplers Scan PDF
    H11D3 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11D3 Motorola Switchmode Datasheet Scan PDF
    H11D3 Motorola European Master Selection Guide 1986 Scan PDF
    H11D3 Motorola Optoelectronics Device Data 1988 Scan PDF
    H11D3 Unknown Interface IC/Device Data Book (Japanese) Scan PDF
    H11D3 QT Optoelectronics High Voltage Phototransistor Optocouplers Scan PDF

    H11D3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H11DX

    Abstract: H11D1 4N38 H11D2 H11D3 H11D4
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 4N38 H11D2 H11D3 H11D4

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original
    PDF H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A1 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X

    25E 106

    Abstract: H11D1M
    Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high


    Original
    PDF 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M H11DXM MOC8204M MOC8204M, 25E 106 H11D1M

    H11D3

    Abstract: RBE1
    Text: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V


    Original
    PDF H11D1/H11D2/H11D3 H11D1/H11D2, H11D3, E52744 H11D1/2/3 H11D1/2/3 H11D3 RBE1

    H11D1-X007

    Abstract: H11D1 H11D2 H11D3 H11D4
    Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


    Original
    PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4

    H11D2

    Abstract: H11D1-X007
    Text: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current


    Original
    PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, i179004 E52744 VDE0884) IEC60950 H11D2 H11D1-X007

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C


    Original
    PDF H11D1/H11D2/H11D3/H11D4 i179004 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 18-Jul-08

    H11D3

    Abstract: DSA0011162
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 17-August-01 H11D3 DSA0011162

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 2.54 7.0


    Original
    PDF H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 H11D2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X

    h11dx

    Abstract: No abstract text available
    Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


    Original
    PDF H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700

    H11D1

    Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
    Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5


    Original
    PDF H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 DB91077m-AAS/A2 H11D1 H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X

    H11D1

    Abstract: No abstract text available
    Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: [email protected] - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 H11D1, H11D2, H11D3, H11D4 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics


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    PDF H11D1, H11D2, H11D3, H11D4 H11D1-H11D4 H11D1-D3 H11D4 100ohm H11D1

    H11D3

    Abstract: No abstract text available
    Text: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3 H11D1/2/3/4 H11D3

    H11D1M

    Abstract: 4N38M H11D1SM H11D2M H11D3M MOC8204M H11D1SR2VM
    Text: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description • High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high


    Original
    PDF H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M H11DXM, 4N38M MOC8204M MOC8204M, H11D1M H11D1SM H11D2M H11D3M H11D1SR2VM

    siemens d 2101

    Abstract: RB1M
    Text: H11D1/H11D2/H11D3 SIEMENS PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Package Dimensions in Inches mm • CTR at lp*10 mA, BVCER=10 V: ¿20% * Good CTR Llnsarlty with Forward Currant * Low CTR Degradation • Very High Collector-Em ltter Breakdown


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    PDF H11D1/H11D2/H11D3 H11D1/H11D2, -H11D3, cH11D1/2/3 siemens d 2101 RB1M

    transistor SMD 11d

    Abstract: 11D transistor Diode smd 11D J
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS* HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Packaqe Dimensions in Inches mm . • CTR at lF=10 mA, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation ♦ " I?1 fSlVl


    OCR Scan
    PDF H11D1/H11D2/H11D3 H11D1/2/3 transistor SMD 11d 11D transistor Diode smd 11D J

    VDE0303

    Abstract: No abstract text available
    Text: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS


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    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 5mA10J 1-888-lnfineon 11D1/2/3/4 VDE0303

    C3883

    Abstract: GE H11D2 verin VDE0833 H11D1 GE
    Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r


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    PDF H11D1 H11D3 E54915 C3883 GE H11D2 verin VDE0833 H11D1 GE

    Untitled

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD 4886510 ISOCOH INC ?5C D • 4flflfc,51D Q00D172 5 2 7 75C 0 0 1 7 2 D H11D1 H11D2 H11D3 H11D4 ■ iso ¿ //- &B High Voltage Optically Coupled Isolators PACKAGE DIMENSIONS IN INCHES MM -I H 066 t t6.2000» rsc (6 10) • o o c^ L J l_l L J


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    PDF Q00D172 H11D1 H11D2 H11D3 H11D4

    C1775

    Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
    Text: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan
    PDF H11D1 H11D2 H11D3 H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3â E90700 C1775 C2079 C1770 C1771 H11D3 C1773 RBE1

    11d2

    Abstract: C1770 h11dx C1775 transistor C1775
    Text: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II H11D1 H11D2 H11D3 PACKAGE DIMENSIONS rib rib rib d e s c r ip t io n The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled


    OCR Scan
    PDF H11D1 H11D2 H11D3 H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- E90700 11d2 C1770 C1775 transistor C1775

    Untitled

    Abstract: No abstract text available
    Text: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan
    PDF H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3-- C1774

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage


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    PDF H11D1/H11D2/H11D3/H11D4 D3/H11

    Untitled

    Abstract: No abstract text available
    Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62


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    PDF Q0G34SS H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, MCT9001