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    V2104 Search Results

    V2104 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    PCV-2-104-05L Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    PCV-2-104-10L Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    PCV-2-104-03L Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
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    V2104 Price and Stock

    TDK Electronics B57371V2104J060

    THERM NTC 100KOHM 4386K 0603
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    DigiKey B57371V2104J060 Reel 48,000 4,000
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    Newark B57371V2104J060 Cut Tape 1,190 10
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    Bristol Electronics B57371V2104J060 6,350
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    TME B57371V2104J060 10
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    • 10000 $0.114
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    TDK Electronics B57471V2104J062

    THERM NTC 100KOHM 4386K 0805
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    DigiKey B57471V2104J062 Reel 30,000 3,000
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    Newark B57471V2104J062 Cut Tape 880 5
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    TME B57471V2104J062 2,362 1
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    TDK Electronics B57374V2104F060

    THERM NTC 100KOHM 4386K 0603
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    DigiKey B57374V2104F060 Cut Tape 21,273 1
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    B57374V2104F060 Digi-Reel 21,273 1
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    B57374V2104F060 Reel 20,000 4,000
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    Newark B57374V2104F060 Cut Tape 8,010 10
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    TDK Electronics B57374V2104H060

    THERM NTC 100KOHM 4386K 0603
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    DigiKey B57374V2104H060 Reel 4,000 4,000
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    B57374V2104H060 Digi-Reel 4,000 1
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    B57374V2104H060 Cut Tape 4,000 1
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    TDK Electronics B57471V2104H062

    THERM NTC 100KOHM 4386K 0805
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    DigiKey B57471V2104H062 Cut Tape 3,894 1
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    B57471V2104H062 Reel 3,000 3,000
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    Find more V2104 price and stock on Findchips.com

    V2104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sensors

    Abstract: LED pspice B57321V2103J060 Thermistor pspice B57232 B57352 NTC 4,7 B57352V5473J060
    Text: EPCOS Sample Kit 2012 SMD NTC Thermistors for LED Applications www.epcos.com Why thermal sensing? Today’s LED system designers face the challenge of reducing costs whilst satisfying the increasing demands for high lumen efficiency and long lifetime requirements.


    Original     		PDF B57999V3999J099 Sensors LED pspice B57321V2103J060 Thermistor pspice B57232 B57352 NTC 4,7 B57352V5473J060

    Untitled

    Abstract: No abstract text available
    Text: RapID Platform - ModbusTCP Network Interface 2-Port Connectivity Solution The RapID Platform Network Interface is a pre-tested module that manages the industrial protocol and network traffic with a single host processor interface The interface contains everything needed including the


    Original     		PDF V2004 V2104 V0004

    C2004C

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original     		PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil C2004C

    C2004A

    Abstract: KM48C2104A C2104A C2104 km48v2104a
    Text: KM48C2004A, KM48C2104A KM48V2004A, V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A b4142 C2004A KM48C2104A C2104A C2104 km48v2104a

    v2308

    Abstract: EP1014 V2205
    Text: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .


    OCR Scan     		PDF 1N4786 1N5139 1485A 1N5441A 1N5461A 1N5461 1N5710A V1652 V1720 SQ131 v2308 EP1014 V2205

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM48C2004BK 16Mx4, 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF 16Mx4, 512Kx8) KM48C2104BK) KM48C2104BK 7ib414E

    V2101

    Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
    Text: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical


    OCR Scan     		PDF MMBV2101LT1/D OT-23 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 V2104 V2101 diode mv2105 SOT23 package diodes MV2105* equivalent

    V2103

    Abstract: V2109 V2105
    Text: PLESSEY SEP1IC0ND/DISCRETE ~ 03 ÔF§7BB 0S3 3 OOObSTT 4 T -o 7 ~ t? Silicon variable capacitance F M M V 2 1 0 1 -F M M V 2 1 0 9 A B S O L U T E M A X IM U M R A T IN G S Value Unit Parameter Sym bol Reverse voltage Vr 30 V Forward current If 20 mA C H A R A C T E R IS T IC S at Tamb = 25°C .


    OCR Scan     		PDF V2102 V2103 V2104 V2105 V2106 V2108 V2109

    A10CE

    Abstract: OYNN KM48C2104B km4e KM48V2104B
    Text: KM48C2004B, KM48C2104B KM48V2004B, V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power


    OCR Scan     		PDF KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B A10CE OYNN km4e KM48V2104B

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF 16Mx4, 512Kx8) KM48C2104BS

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    KM48V2104b

    Abstract: No abstract text available
    Text: KM48V2004BK CMOS DRAM ELECTR O NICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM48V2004BK 512Kx8) 48V2004BK 003SS7D KM48V2104b

    Untitled

    Abstract: No abstract text available
    Text: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G V2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF FMMV2101 FMMV2109 FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 FMMV2108

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004BS CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM48C2004BS 512Kx8) KM48C2004B

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    OCR Scan     		PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C

    KM48V2104B

    Abstract: No abstract text available
    Text: KM48V2004BS CMOS DRAM ELECTR O NICS 2 M x 8 Bit C M O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM48V2004BS 16Mx4, 512Kx8) KM48V2104B

    MMBV2107LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical


    OCR Scan     		PDF MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 V2104 V2105 V2108

    MV2107

    Abstract: BV2108 MV2113 BV-2108
    Text: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02


    OCR Scan     		PDF MMBV2101L MMBV2109L MV2101 MV2115 O-236AB OT-23 MMBV2109L MV2107 BV2108 MV2113 BV-2108