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    ZC822 Search Results

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    ZC822 Price and Stock

    Kyocera AVX Components 0603ZC822KAT2A

    CAP CER 8200PF 10V X7R 0603
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    DigiKey 0603ZC822KAT2A Cut Tape 1,027 1
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    0603ZC822KAT2A Digi-Reel 1,027 1
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    0603ZC822KAT2A Reel 4,000
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    Mouser Electronics 0603ZC822KAT2A 35,909
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    Kyocera AVX Components LD02ZC822KAB2A

    CAP CER SMD
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    DigiKey LD02ZC822KAB2A Reel 10,000
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    Newark LD02ZC822KAB2A Reel 10,000
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    Kyocera AVX Components 0201ZC822KAT2A

    CAP CER SMD
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    DigiKey 0201ZC822KAT2A Reel 15,000
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    TTI 0201ZC822KAT2A Reel 15,000
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    Kyocera AVX Components 0603ZC822KAT4A

    CAP CER SMD
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    DigiKey 0603ZC822KAT4A Reel 15,000
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    Newark 0603ZC822KAT4A Reel 15,000
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    Kyocera AVX Components 0402ZC822JAT2A

    CAP CER SMD
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    DigiKey 0402ZC822JAT2A Reel 10,000
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    Mouser Electronics 0402ZC822JAT2A
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    Newark 0402ZC822JAT2A Reel 10,000
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    ZC822 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZC822 Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODE Original PDF
    ZC822 Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES Original PDF
    ZC822 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    ZC822 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC822 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZC822 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    ZC822 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZC822 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC822A Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODE Original PDF
    ZC822B Zetex Semiconductors SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODE Original PDF

    ZC822 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3819 spice model

    Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
    Text: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable


    Original
    PDF 50MHz) OT-23 ZC740 FMMV2101 ZC741 FMMV2102 ZC742 FMMV2103 ZC743 2N3819 spice model varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819

    C20 diode, TO

    Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
    Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)


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    PDF ZC820 50MHz ZC821 ZC822 ZC823 ZC824 ZC825 ZC826 C20 diode, TO 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original
    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    ZC825 SOT-23

    Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


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    PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC825 SOT-23 diode marking w8 marking Z6 ZC803 ZC804

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


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    PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 ZC82

    ZC823

    Abstract: ZC821 diode 816
    Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M1 i» ii 1 CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage MAX U N IT Vr 25 V Forw ard Current If 200 mA Power Dissipation at T amb=25°C


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    PDF ZC820 ZC821 ZC822 ZC823 ZC824 ZC825 ZC826 diode 816

    ZC800

    Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 .564 SOT23
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SER IES FOR PCB MOUNTING. C H A R A C T E R IS T IC S at 2 5 °C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q


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    PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC803 ZC804 ZC823 .564 SOT23

    ZC800

    Abstract: HYPERABRUPT ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821
    Text: HYPER ABRUPT VARIABLE CAPACITANCE TUNER DIODES S IL IC O N IO N IM P L A N T E D H Y P E R A B R U P T T U N E R D IO D E S Designed for use in HF, V H F, U H F electronic tuning applications where large capacitance variations and high Q are required. Tamb = 25*C


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    PDF C2/C20 ZC800 ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821 HYPERABRUPT

    zc825

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 capac832A zc825 ZC830A ZC831A ZC832A

    Untitled

    Abstract: No abstract text available
    Text: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M 1 k CATHODE ANODE ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L R everse Voltage M AX UNIT Vr 25 V Forward Current 'F 200 mA Pow er Dissipation at T amb=25°C


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    PDF ZC820 001G35S

    Untitled

    Abstract: No abstract text available
    Text: 5bE D • ^70570 GOGbTH? bflT ■ Z E T B E-LINE DIODE SPECIFICATIONS S C H O T T K Y BARRIER DIODES ZETEX T - c n - i^ SEMICONDUCTORS T h e se de v ice s have a high breakdow n voltage and ultra fa st sw itc h in g capabilities. R.F. applications in clu d e low n o ise m ixers, large and sm all signal detectors, lim iters and discrim inators. A p p lica tio n s


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    PDF ZC2800 ZC2811 ZC5800 7G57fl DO-35)

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


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    PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    zc826 IC

    Abstract: No abstract text available
    Text: PLESSEY S E M I C O N D / D I S C R E T E T S 7 2 20 5 33 PLESSEY dF | ? 2E0SB3 95D 0 4 9 8 4 S E M I C O N D / D I S C RE TE fl D i TABLE 4 : VARIABLE CAPACITANCE TUNER DIODES HYPEBABRUPTTYPEI ! i T-oi-n Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning


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    PDF ZC800, ZC820 ZC830A ZC800 perature-ZC800 ZC830 zc826 IC

    ZC830

    Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
    Text: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast sw itching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 infi832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825

    marking NB D9 sot-23

    Abstract: ZC821 ZC825 SOT23 ZC825 SOT-23 ZC800 ZC801 ZC802 ZC803 ZC820 ZC822
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICON ION IMPLANTED HYPERABRUPT TUNER DIODES Designed for use in HF, VHF and UHF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a semiconductor doping technique enabling close control of doping and profile. Its


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    PDF ZC800, ZC820 ZC830A OT-23 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A marking NB D9 sot-23 ZC821 ZC825 SOT23 ZC825 SOT-23 ZC800 ZC801 ZC802 ZC803 ZC822

    6H MARKING

    Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
    Text: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications under pulsed conditions include ultra high speed switching, clamping, sampling gates and pulse shaping.


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E 6H MARKING ZC820 ZC821 ZC822 ZC823 ZC824 ZC825

    ZC821

    Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its


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    PDF ZC800, ZC820 ZC830A OT-23 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC821 NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC822

    K 250 diode

    Abstract: k1a1 diode 816
    Text: E-LINE DIODES TABLE 12: PRECISION MICROPOWER VOLTAGE R EFERENCES PART NO. Nominal Voltage V# PIN OUT Guaranteed Knee Current UA Slope Resistance n Temperature Coefficient PPM/°C 1 2 3 50 50 20 50 50 50 1 2 2 2 2 2 50 50 50 90 90 90 n/c n/c n/c n/c n/c n/c


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    PDF ZRB500A ZRA400A ZRC330A ZRA250A ZRA125A ZRA124A ZRB500Y ZRA400Y ZRC330Y ZRA250Y K 250 diode k1a1 diode 816