Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a
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Original
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UT3414
UT3414
OT-23
UT3414L
UT3414G
UT3414-AE3-R
QW-R502-248
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in
|
Original
|
UT3414
UT3414
UT3414L-AE3-R
UT3414G-AE3-R
OT-23
QW-R502-248
|
PDF
|
32A marking sot-23
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a
|
Original
|
UT3414
UT3414
OT-23
UT3414L
UT3414G
UT3414-AE3-R
UT3414L-AE3-R
UT3414G-AE3-R
QW-R502-248
32A marking sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT3414 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in
|
Original
|
UT3414
UT3414
UT3414L-AE3-R
UT3414G-AE3-R
OT-23
QW-R502-248
|
PDF
|