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TURCK Inc LOCKNUT3/4-14HEX(10/BAG) Cac \|Turck LOCKNUT3/4-14HEX(10/BAG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	LOCKNUT3/4-14HEX(10/BAG)	Bulk			1	1 $39.9 10 $39.9 100 $39.9 1000 $39.9 10000 $39.9	Buy Now
TURCK Inc LOCKNUT 3/4-14 HEX (10/BAG) (ALTERNATE: A9559) LOCKNUT 3/4-14 HEX (10/BAG), A9559 \| Turck LOCKNUT 3/4-14 HEX (10/BAG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LOCKNUT 3/4-14 HEX (10/BAG) (ALTERNATE: A9559)	Bulk		5 Weeks	1	1 $39.9 10 $39.9 100 $39.9 1000 $39.9 10000 $39.9	Get Quote

UT3414 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a	Original	UT3414 UT3414 OT-23 UT3414L UT3414G UT3414-AE3-R QW-R502-248	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in	Original	UT3414 UT3414 UT3414G-AE3-R OT-23 QW-R502-248	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in	Original	UT3414 UT3414 UT3414L-AE3-R UT3414G-AE3-R OT-23 QW-R502-248	PDF
32A marking sot-23 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET N-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a	Original	UT3414 UT3414 OT-23 UT3414L UT3414G UT3414-AE3-R UT3414L-AE3-R UT3414G-AE3-R QW-R502-248 32A marking sot-23	PDF
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD UT3414 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in	Original	UT3414 UT3414 UT3414L-AE3-R UT3414G-AE3-R OT-23 QW-R502-248	PDF